1978
DOI: 10.1109/isscc.1978.1155830
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Abstract: ONE WAY TO INCREASE the density of dynamic RAMS is t o utilize a VMOS-technology which allows the design of a three dimensional one-transistor memory cell' J'3.A VMOS-process based on a self-aligned planar AL-gate process will be presented. Its self-alignment feature is achieved by different oxide growth rates in diffused and undiffused areas.Buried layers and the V-grooves for the self aligned VMOStransistors are generated with two additional process steps. The process requires only 7 masks, including the on…

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