Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy

Steckl, A. J.; Birkhahn, R.

doi:10.1063/1.122250

Cited by 214 publications

(123 citation statements)

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“…Such is the case of the semiconductor materials doped with rare earth (RE) ions, which have been widely studied due to the narrow and intense luminescence they yield, aiming at a wealth of applications. [5][6][7][8] Recently, excellent electro-optical properties have been reported on III-V semiconductors as host matrix for different RE ions, allowing for a suitable performance as light-emitting devices. 5,9 In addition, REs have been employed to develop light-emitting silicon-based materials for optoelectronic applications.…”

Section: Introductionmentioning

confidence: 99%

“…[5][6][7][8] Recently, excellent electro-optical properties have been reported on III-V semiconductors as host matrix for different RE ions, allowing for a suitable performance as light-emitting devices. 5,9 In addition, REs have been employed to develop light-emitting silicon-based materials for optoelectronic applications. 10,11 With this aim, several works have reported on RE-doped oxides such as SiO 2 , Sirich silicon oxide, [12][13][14] or Si-rich silicon oxynitride 15 matrices as potential candidates to become active layers in lightemitting devices.…”

Section: Introductionmentioning

confidence: 99%

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Structural and optical properties of Al-Tb/SiO2 multilayers fabricated by electron beam evaporation

Blázquez

López-Vidrier

López‐Conesa

et al. 2016

Journal of Applied Physics

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Articles you may be interested inLight emitting Al-Tb/SiO 2 nanomultilayers (NMLs) for optoelectronic applications have been produced and characterized. The active layers were deposited by electron beam evaporation onto crystalline silicon substrates, by alternatively evaporating nanometric layers of Al, Tb, and SiO 2 . After deposition, all samples were submitted to an annealing treatment for 1 h in N 2 atmosphere at different temperatures, ranging from 700 to 1100 C. Transmission electron microscopy confirmed the NML structure quality, and by complementing the measurements with electron energy-loss spectroscopy, the chemical composition of the multilayers was determined at the nanoscopic level. The average composition was also measured by X-ray photoelectron spectroscopy (XPS), revealing that samples containing Al are highly oxidized. Photoluminescence experiments exhibit narrow emission lines ascribed to Tb 3þ ions in all samples (both as-deposited and annealed ones), together with a broadband related to SiO 2 defects. The Tb-related emission intensity in the sample annealed at 1100 C is more than one order of magnitude higher than identical samples without Al. These effects have been ascribed to the higher matrix quality, less SiO 2 defects emitting, and a better Tb 3þ configuration in the SiO 2 matrix thanks to the higher oxygen content favored by the incorporation of Al atoms, as revealed by XPS experiments. Published by AIP Publishing.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Structural and optical properties of Al-Tb/SiO2 multilayers fabricated by electron beam evaporation

Blázquez

López-Vidrier

López‐Conesa

et al. 2016

Journal of Applied Physics

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“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14] In particular, the large band gaps of GaN, AlN, and their alloys allow emission of higher energy rare earth transitions that are otherwise absorbed in smaller band gap host materials. Therefore, these materials may have application in visible displays or in white light systems that employ color-combining techniques.…”

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confidence: 99%

Ultraviolet photoluminescence from Gd-implanted AlN epilayers

Zavada

Nepal

Lin

et al. 2006

Applied Physics Letters

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Deep ultraviolet emission from gadolinium ͑Gd͒-implanted AlN thin films has been observed using photoluminescence ͑PL͒ spectroscopy. The AlN epilayers were ion implanted with Gd to a total dose of ϳ6 ϫ 10 14 cm −2 . Using the output at 197 nm from a quadrupled Ti:sapphire laser, narrow PL emission was observed at 318 nm, characteristic of the trivalent Gd ion. A broader emission band, also centered at 318 nm, was measured with excitation at 263 nm. The PL emission intensity decreased by less than a factor of 3 over the sample temperature range of 10-300 K and decay transients were of the order of nanoseconds.

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“…[1][2][3] Photoluminescence ͑PL͒ and cathodoluminescence ͑CL͒ data have been reported from nearly all lanthanide ions doped into GaN. [1][2][3] Visible EL devices based on RE-doped GaN, however, have only been demonstrated from GaN:Eu ͑red͒, 1,5,6 GaN:Er ͑green͒, 7 and GaN:Tm ͑blue͒. 8 One of the main challenges in using RE-doped GaN for full-color display applications is obtaining efficient blue emission.…”

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confidence: 99%

Photoluminescence properties of in situ Tm-doped AlxGa1−xN

Hömmerich

Nyein

Lee

et al. 2003

Applied Physics Letters

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We report on the photoluminescence ͑PL͒ properties of in situ Tm-doped Al x Ga 1Ϫx N films (0рx р1) grown by solid-source molecular-beam epitaxy. It was found that the blue PL properties of Al x Ga 1Ϫx N:Tm greatly change as a function of Al content. Under above-gap pumping, GaN:Tm exhibited a weak blue emission at ϳ478 nm from the 1 G 4 → 3 H 6 transition of Tm 3ϩ . Upon increasing Al content, an enhancement of the blue PL at 478 nm was observed. In addition, an intense blue PL line appeared at ϳ465 nm, which is assigned to the 1 D 2 → 3 F 4 transition of Tm 3ϩ . The overall blue PL intensity reached a maximum for xϭ0.62, with the 465 nm line dominating the visible PL spectrum. Under below-gap pumping, AlN:Tm also exhibited intense blue PL at 465 and 478 nm, as well as several other PL lines ranging from the ultraviolet to near-infrared. The Tm 3ϩ PL from AlN:Tm was most likely excited through defect-related complexes in the AlN host.

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Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy

Abstract: Growth and morphology of Er-doped GaN on sapphire and hydride vapor phase epitaxy substrates

Cited by 214 publications

References 18 publications

Structural and optical properties of Al-Tb/SiO2 multilayers fabricated by electron beam evaporation

Structural and optical properties of Al-Tb/SiO2 multilayers fabricated by electron beam evaporation

Ultraviolet photoluminescence from Gd-implanted AlN epilayers

Photoluminescence properties of in situ Tm-doped AlxGa1−xN

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