2008 IEEE Sensors 2008
DOI: 10.1109/icsens.2008.4716643
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Very thin SiC membranes for micromachined vacuum sensors

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Cited by 3 publications
(2 citation statements)
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“…This deposition is performed using a LPCVD furnace employing diclorosilane (SiH 2 Cl 2 ) and acetylene (C 2 H 2 ) as precursor gasses. In order to obtain a polycrystalline layer the deposition temperature is set to 860°C [42], [43]. The pressure is set to 60 Pa and gas flows of SiH 2 Cl 2 and C 2 H 2 are set to 400 and 100 sccm, respectively.…”
Section: Fabricationmentioning
confidence: 99%
“…This deposition is performed using a LPCVD furnace employing diclorosilane (SiH 2 Cl 2 ) and acetylene (C 2 H 2 ) as precursor gasses. In order to obtain a polycrystalline layer the deposition temperature is set to 860°C [42], [43]. The pressure is set to 60 Pa and gas flows of SiH 2 Cl 2 and C 2 H 2 are set to 400 and 100 sccm, respectively.…”
Section: Fabricationmentioning
confidence: 99%
“…SiC ダイアフラムを用いたもの (10) (11) や容量検出サーボ式の もの (12) などが報告されている。粘性を計測する方式では静 電駆動共振子の共振周波数変化を求めるもの (13) や共振時の 振幅変化を求めるもの (14) (15)…”
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