Very narrow-band ultraviolet photodetection based on strained M-plane GaN films

Ghosh, Sandip; Rivera, C.; Pau, J. L.; Muñoz, E.; Brandt, O.; Grahn, H. T.

doi:10.1063/1.2710769

Cited by 31 publications

(24 citation statements)

References 19 publications

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“…This opened up the possibility for fabricating nonpolar electronic devices. MOVPE [53] PSPD [124,125] LED [53,58], LD [118 -122] MOVPE [48] HVPE [46] MOVPE [60,62] LED [48] LED [59,61], LD [123] LED [48] LED [60,62] The same group at the USC also demonstrated the first ultraviolet (UV) light-emitting diode using nonpolar a-plane GaN/AlGaN MQWs grown on r-plane sapphire [42]. Even the first experimental prototypes showed a peak emission at 363 nm with intensity almost 30 times stronger than that in the structures grown on the c-plane sapphire.…”

Section: The First Nonpolar Nitride Devicesmentioning

confidence: 99%

“…The polarized light sources do not require polarizing filters and thus the screens can be made thinner, lighter and more energy efficient. The first polarization-sensitive photodetector (PSPD) based on m-plane GaN [123] and the first very narrowband photodetector [124], combining PSPD with a polarization filter with rotated in-plane crystal orientation, have been proposed very recently, demonstrating a valuable applicability of the concept for polarization anisotropy.…”

Section: Electrical Propertiesmentioning

confidence: 99%

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Development and prospects of nitride materials and devices with nonpolar surfaces

Paskova

2008

Physica Status Solidi (b)

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IntroductionThe commercial fabrication of lightemitting diodes (LED) and laser diodes (LD) from the ultraviolet to the amber, as well as the development of highpower high electron mobility transistors (HEMT) suitable for numerous telecom applications have been driven by the tremendous improvement in the nitride materials quality. Despite remarkable achievements during the last decade, however, the device performance is hampered by the presence of strong spontaneous and piezoelectric polarization fields along the typical [0001] growth direction in the wurtzite nitride materials [1]. As a consequence of these strong internal fields, the quantum wells (QW), typically used in the active region of optical emitter devices, have a triangular potential profile and the oscillator strength for optical transitions is reduced by several orders of magnitude, depending on the QW thickness [2,3]. A similar deterioration effect is observed in the nitride-based HEMT devices due to a polarization-generated charge. A typical AlGaN/GaN HEMT built in the [0001] growth direction experiences a channel charge of more than 1 × 10 13 cm

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Section: The First Nonpolar Nitride Devicesmentioning

confidence: 99%

Section: Electrical Propertiesmentioning

confidence: 99%

Development and prospects of nitride materials and devices with nonpolar surfaces

Paskova

2008

Physica Status Solidi (b)

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“…23,24 The coordinates x, y, and z are parallel to the [112 -0] direction (corresponding to the a-plane), [11 -00] direction (corresponding to the m-plane), and [0001] direction (corresponding to the c-plane), respectively. Sample I, with a thickness of 1 µm, was grown by radiofrequency (rf) plasma-assisted molecular beam epitaxy (rf-PAMBE) on a commercially available 200-µm-thick freestanding GaN template.…”

Section: Samples and Experimental Detection Schemesmentioning

confidence: 99%

“…Spectral responsivity R FD of the combination of one polarization filter and one polarization-sensitive photodetector based on sample III for E ⊥ c det (solid line) and E || c det (dotted line) at 295 K 23. …”

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Nonpolar-Oriented GaN Films for Polarization-Sensitive and Narrow-Band Photodetectors

Grahn¹

2009

MRS Bull.

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This article reviews the optical polarization properties of unstrained and strained GaN films with a nonpolar orientation. In unstrained a-plane GaN films, the A exciton becomes completely linearly polarized perpendicular to the c-axis, whereas the B and C excitons are only partially polarized. In m-plane or a-plane GaN films under anisotropic in-plane compressive strain, all three interband transitions between the three uppermost valence bands and the conduction band can become linearly polarized for sufficiently large strain values. The complete linear polarization can be directly observed in reflection, transmission, or photoreflectance by a polarization-dependent energy gap. This complete linear polarization can be used to realize polarization-sensitive photodetectors in the ultraviolet spectral range, which do not need a polarization filter in front of the photodetector. By combining a polarization filter and photodetector or two photodetectors from the same material with their c-axes oriented perpendicular to each other, a narrowband photodetection configuration can be achieved in the ultraviolet spectral range with a band width below 8 nm. Since both realizations are also polarization sensitive, a configuration with four photodetectors is necessary to achieve narrow-band sensitivity regardless of the polarization state of the incident light. At the same time, the configuration with four photodetectors allows for the determination of the absolute angle of polarization.

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“…Using a combination consisting of an M-plane GaN film acting as a filter and another film processed into a photodetector, we have demonstrated a very narrow band detection configuration where the responsivity peaks at 360 nm with a full width at half maximum of only 6 nm [18]. In the case of an M-plane oriented AlN/GaN Bragg mirror structure, because of the change in the refractive index with polarization, the high reflectivity stop band shifts in wavelength if the linear polarization of the incident light is changed from E ⊥ c to E c. We have made use of this phenomenon to demonstrate a polarization dependent beam switch [19].…”

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Opto-electronic devices based on wurtzite group-III nitride films with non-polar orientations

Ghosh

2007

2007 International Workshop on Physics of Semiconductor Devices

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Index Terms-GaN, M-plane, anisotropic strain, polaizationsensitive detection, narrow-band photodetection, polarizationsensitive switching I. EXTENDED ABSTRACT Group-III nitride semiconductors, which have stable wurtzite crystal structure, are today amongst the most important materials for opto-electronic device applications. Currently all commercially available nitride light emitting devices are made with C-plane oriented films, where growth is along the c-axis [see Fig. 1(a)]. However large Piezo-electric and Pyro-electric effects [1] in these materials lead to high interfacial charge density [2] and electric fields [3], [4] in heterostructure quantum wells having C-plane orientation. The high electric field (∼ MV/cm) is detrimental for light emitting devices which generally have a quantum well in the active region. It spatially separates electrons and holes within the well, thereby reducing the radiative lifetime and consequently the efficiency of the device. A way to overcome this problemValence (b) A B C Band Conduction Band X iY X iY Z S (a) z c x A-plane (1120) [0001] M-plane (1100) y c C-plane (0001)Fig. 1. (a) The wurtzite unit cell of GaN showing the A, C, and M planes and the choice of coordinates. (b) Schematic electronic band structure of unstrained GaN, showing the conduction and valence band wave function symmetry at the center of the Brillouin zone.is by the use of films with non-polar orientations, whose normal to the surface is perpendicular to the c-axis, such as M-plane and A-plane films [see Fig. 1(a)]. The absence of high electric fields in quantum wells grown with M-plane orientation was first demonstrated by Brandt and coworkers [5]. The increase in quantum efficiency of photo-luminescence from multi quantum wells with A-plane orientation has also been verified [6]. However it has been a challenge to routinely grow very high quality films of such non-polar orientations asThe author is with the required for device applications. Earliest reports of electroluminescence from p-n junction based structures came around 2004 [7], it was also shown that the emission was strongly polarized [8]. Thereafter a packaged blue light emitting diode was demonstrated with an output power of 23.5 mW for 1 A pulsed current [9] and more recently a blue-violet LED with an output power of 250 mW for 200 mA pulsed current, representing an external quantum efficiency of 41 % [10]. The first optically pumped laser using an A-plane oriented structure has been reported recently [11]. Apart from light emitters, the unique physical properties of non-polar nitride films have opened up the possibility of novel photodetector applications, which will be the main thrust of this presentation.In general an uniaxial crystal is expected to show anisotropy in its optical properties between light polarized parallel and perpendicular to the optic-axis, which for a wurtzite crystal is the c-axis. Therefore in M-plane and A-plane films even at normal incidence, one can expect anisotropy in the optical properties between light with pol...

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Very narrow-band ultraviolet photodetection based on strained M-plane GaN films

Cited by 31 publications

References 19 publications

Development and prospects of nitride materials and devices with nonpolar surfaces

Development and prospects of nitride materials and devices with nonpolar surfaces

Nonpolar-Oriented GaN Films for Polarization-Sensitive and Narrow-Band Photodetectors

Opto-electronic devices based on wurtzite group-III nitride films with non-polar orientations

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