Vertical p–i–n Polysilicon Diode With Antifuse for Stackable Field-Programmable ROM

Herner, S. B.; Bandyopadhyay, Abhijit; Dunton, S.V.; Eckert, Victoria; Gu, Jun; Hsia, K. Jimmy; Hu, S.; Jahn, C.; Kidwell, D.; Konevecki, M.; Mahajani, M.; Park, K.; Petti, C.; Radigan, S.; Raghuram, Usha; Vienna, J.; Vyvoda, M. A.

doi:10.1109/led.2004.827287

Cited by 40 publications

(18 citation statements)

References 4 publications

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“…[1][2][3][4][5][6][7] While the manufacturing costs of hydrogenated amorphous silicon (a-Si:H) and polysilicon (polySi) devices are lower than single crystal silicon, they are still too high for itemlevel RFIDs, disposable sensors and ultra low-cost displays. In addition, drawbacks such as photosensitivity, nontransparency, light-or hot carrier-induced degradation, poor light emission characteristics, and costly and complicated processing limit their usage in potentially disruptive technologies such as transparent electronics and solution processed optoelectronics.…”

Section: Introductionmentioning

confidence: 99%

Effect of sol stabilizer on the structure and electronic properties of solution-processed ZnO thin films

et al. 2015

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ZnO is an increasingly important wide bandgap semiconductor for optoelectronic applications. Solution processing provides a facile and inexpensive method to form ZnO thin films with high throughput. The sol stabilizer used in the solution processing of ZnO functions variously as a sol homogenizer, chelating agent, wettability improver and capping agent. In spite of its obvious importance in influencing ZnO film properties, a restricted set of short chain alkaline sol stabilizers have been used in prior reports. We examined the effect of six different sol stabilizers, including acidic and longer chain species, along with a recipe without any stabilizer, on the grain size, crystallographic texture, and resistivity of solution processed ZnO films on thermal oxide-coated silicon substrates, and found large variations in the structural and electrical properties as a consequence of the choice of sol stabilizer. We found that ZnO films formed using oleic acid as the sol stabilizer possessed a strong (002) preferred orientation with a Lotgering factor as high as 0.86. The key insight we obtained is that the sol stabilizer strongly influences the film surface area and activation energy barrier for inter-grain transport. We comprehensively studied the steady state and transient behavior of ZnO films deposited using different stabilizers and compared their lifetime and mobility-lifetime products. When exposed to illumination, the conductivity of the deposited films increased by several orders of magnitude. This is attributed to the trapping of the nonequilibrium holes by the surface adsorbed oxide species, which produces equivalent number of excess electrons in the conduction band. Impedance spectroscopy and C-V measurements were performed to calculate the doping of the ZnO thin films. ZnO thin film transistors were also fabricated and the effects of the sol stabilizer on the different parameters of the TFT like mobility and threshold voltage were investigated.

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Section: Introductionmentioning

confidence: 99%

Effect of sol stabilizer on the structure and electronic properties of solution-processed ZnO thin films

et al. 2015

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“…In the history of electronic engineering, one-time programmable (OTP) memories were mainly used for read-only-memory (ROM) applications where the central processing unit (CPU) instructions were stored to operate a whole computer system [1,2,3]. By grafting a novel structuring with the concept of OTP memory and the nanoscale silicon (Si) processes, innovative high-density nonvolatile memory (NVM) applications can be implemented.…”

Section: Introductionmentioning

confidence: 99%

Vertical stack array of one-time programmable nonvolatile memory based on pn-junction diode and its operation scheme for faster access

Cho

Jung

Kim

et al. 2014

IEICE Electron. Express

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In this work, a three-dimensional (3-D) architecture of one-time programmable (OTP) nonvolatile memory (NVM) arrays is introduced and its viable process integration and operation method are schemed. Vertical stack architecture is highly persued for higherlevel integration and NVMs based on devices free from transistors and charge trapping layers would be one of the candidates. In this work, in an effort for the NVM technology trend, architecture, fabrication process, and operation scheme for faster data access are studied in depth. Silicon (Si) pn-junction diode is focused by its virtues of cost-effectiveness, process maturity, and compatibility to peripheral Si CMOS circuits.

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“…Conventionally, most of the OTP is fabricated using either special process which requires additional masks in addition to the standard CMOS process available form common foundries [1]. Some high density OTP structures are not CMOS compatible in order to achieve very compact structure [2]. This will increase the design time and process cost as a result of more complicated design flow and processing steps.…”

Section: Introductionmentioning

confidence: 99%

Diode based gate oxide anti-fuse one time programmable memory array in standard CMOS process

Lee

Kwong

et al. 2009

2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

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Vertical p–i–n Polysilicon Diode With Antifuse for Stackable Field-Programmable ROM

Cited by 40 publications

References 4 publications

Effect of sol stabilizer on the structure and electronic properties of solution-processed ZnO thin films

Effect of sol stabilizer on the structure and electronic properties of solution-processed ZnO thin films

Vertical stack array of one-time programmable nonvolatile memory based on pn-junction diode and its operation scheme for faster access

Diode based gate oxide anti-fuse one time programmable memory array in standard CMOS process

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