Vertical MoS2 transistors with sub-1-nm gate lengths

Wu, Fan; Tian, He; Shen, Yang; Hou, Zhan; Ren, Jie; Gou, Guangyang; Sun, Yabin; Yang, Yi; Ren, Tian‐Ling

doi:10.1038/s41586-021-04323-3

Cited by 347 publications

(267 citation statements)

References 38 publications

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“…We considered nano-scale devices, with scale factor in the order of the nano-meter. These ultra-scaled devices are extremely interesting for the development of next-generation electronic devices [24][25][26][27]. At this length-scale, the considered devices are formed by not more than few hundreds of atoms, allowing for an atomistic approach.…”

Section: Methodsmentioning

confidence: 99%

Piezoresistive Memories Based on Two-Dimensional Nano-Scale Electromechanical Systems

2022

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In this work we present piezoresistive memory-bits based on two-dimensional nano-scale electro-mechanical systems. We demonstrate it is possible to achieve different electrical responses by fine control of micro-structural asymmetries and that information can be encoded in the geometrical configuration of the device and read as in classical ReRAM memories by measuring the current flowing across it. Based on the potential energy landscape of the device, we estimate the energy cost to operate the proposed memories. The estimated energy requirements for a single bit compete with existing technologies.

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Section: Methodsmentioning

confidence: 99%

Piezoresistive Memories Based on Two-Dimensional Nano-Scale Electromechanical Systems

2022

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“…The families of 2D materials include myriad types of materials (conductor, semiconductor, and insulator) which can be scaled down to monolayer with subatomic thickness while maintaining better carrier mobility than bulk materials. [ 5 ] Promising scalability has been demonstrated by MoS 2 FETs with 10, [ 20,21 ] 1, [ 22 ] and sub‐1 nm [ 23,24 ] gate length. In addition, future electronics designs could be expanded by unique ultrathin‐body device structures based on 2D materials FET with diverse electrical characteristics.…”

Section: Progress Of 2d Materials In Electronicsmentioning

confidence: 99%

Application of 2D Materials in Hardware Security for Internet‐of‐Things: Progress and Perspective

et al. 2022

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Internet‐of‐Things (IoT) is a ubiquitous network that features a tremendous amount of data and myriads of heterogeneous devices, which are interconnected and accessible or controllable anywhere and anytime. The security of IoT is therefore unequivocally crucial in several aspects, such as device‐to‐device communication, sensing and actuating, and information exchange. Conventional cryptographic algorithms and silicon‐based security primitives are constantly challenged by evolving methods of attack. By far, many efforts and achievements have been made using 2D materials for various electronics applications. Therefore, it is plausible to explore the implementation of hardware security using 2D materials, for example, true random number generators (TRNGs), physical unclonable functions (PUFs), camouflage, and anticounterfeit. TRNGs and PUFs are critical elements of hardware security and are widely deployed in cryptographic keys, identification, and authentication. In contrast to conventional utilization of manufacturing variations, security primitives using 2D materials have other entropy sources to exploit, such as the random nature of material growth and intrinsic randomness in charge trapping/detrapping. In this review, research progresses in 2D material‐based TRNGs, PUFs, and other security applications are summarized, along with the discussion on entropy sources, reliability, circuit, and machine learning modeling attacks launched on TRNGs and PUFs.

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“…With the rapid advances in nanofabrication technology, the minimum gate length scales of transistors have been reduced to sub-10 nm [ 1 , 2 , 3 , 4 , 5 ], so they require precise geometric measurements, which in turn induces high demands on the accuracy of nano-measurement instruments. Therefore, it is necessary to develop nano-standards with traceability to calibrate the nano-measurement instruments to ensure the accuracy of characterization in nanofabrication, and accordingly, improve the performance of integrated circuits.…”

Section: Introductionmentioning

confidence: 99%

High-Precision Regulation of Nano-Grating Linewidth Based on ALD

et al. 2022

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A nano-grating standard with accurate linewidth can not only calibrate the magnification of nano-measurement instruments, but can also enable comparison of linewidths. Unfortunately, it is still a challenging task to control the linewidth of nano-grating standards. Accordingly, in this paper, atomic layer deposition (ALD) was used to regulate the linewidth of the one-dimensional grating standards with a pitch of 1000 nm, fabricated by electron beam lithography (EBL). The standards were measured using an atomic force microscope (AFM) before and after ALD, and the linewidth and pitch of the grating were calculated through the gravity center method. The obtained results prove that the width of a single grating line in the standard can be regulated with great uniformity by precisely utilizing ALD. Meanwhile, the proposed method does not affect the pitch of grating, and the measurement uncertainty of standards is less than 0.16% of the pitch, thereby demonstrating a high surface quality and calibration reliability of the standards, and realizing the integration of linewidth and pitch calibration functions. Moreover, the precise and controllable fabrication method of the micro-nano periodic structure based on ALD technology has many potential applications in the fields of optoelectronic devices and biosensors.

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Vertical MoS2 transistors with sub-1-nm gate lengths

Cited by 347 publications

References 38 publications

Piezoresistive Memories Based on Two-Dimensional Nano-Scale Electromechanical Systems

Piezoresistive Memories Based on Two-Dimensional Nano-Scale Electromechanical Systems

Application of 2D Materials in Hardware Security for Internet‐of‐Things: Progress and Perspective

High-Precision Regulation of Nano-Grating Linewidth Based on ALD

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