Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV

Ohta, Hiroshi; Kaneda, Naoki; Horikiri, Fumimasa; Narita, Yuji; Yoshida, Takehiro; Mishima, Tomoyoshi; Nakamura, Tohru

doi:10.1109/led.2015.2478907

Cited by 198 publications

(128 citation statements)

References 9 publications

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“…[3][4][5] However, the present status of the development of GaN-based power devices lags behind that of SiC devices. Availabilities of single-crystal SiC substrates since the 1980s and of high-purity epitaxial layers of SiC since the 1990s have led to more-rapid development of SiC-power devices.…”

Section: Introductionmentioning

confidence: 99%

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Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Fujikura

Konno

Yoshida

et al. 2017

Jpn. J. Appl. Phys.

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Thick (20–30 µm) layers of highly pure GaN with device-quality smooth as-grown surfaces were prepared on freestanding GaN substrates by using our advanced hydride-vapor-phase epitaxy (HVPE) system. Removal of quartz parts from the HVPE system markedly reduced concentrations of residual impurities to below the limits of detection by secondary-ion mass spectrometry. Appropriate gas-flow management in the HVPE system realized device-quality, smooth, as-grown surfaces with an excellent uniformity of thickness. The undoped GaN layer showed insulating properties. By Si doping, the electron concentration could be controlled over a wide range, down to 2 × 1014 cm−3, with a maximum mobility of 1150 cm2·V−1·s−1. The concentration of residual deep levels in lightly Si-doped layers was in the 1014 cm−3 range or less throughout the entire 2-in. wafer surface. These achievements clearly demonstrate the potential of HVPE as a tool for epitaxial growth of power-device structures.

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Section: Introductionmentioning

confidence: 99%

“…4,5,[27][28][29] Among the various methods for the growth of freestanding GaN substrates, hydride-vaporphase epitaxy (HVPE) is the most well established, and wafers with diameters of 2-in. or more have been prepared and used in the mass production of optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Fujikura

Konno

Yoshida

et al. 2017

Jpn. J. Appl. Phys.

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“…The right axis indicates the projected absolute breakdown voltage for Ga 2 O 3 devices for comparison. Square symbols indicate experimental measurements of devices with breakdown voltages among the highest reported for each material: Si 38 , SiC 39 , GaN 40 , Ga 2 O 3 7 . …”

Section: Introductionmentioning

confidence: 99%

Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices

Neal

Mou

López

et al. 2017

Sci Rep

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Understanding the origin of unintentional doping in Ga2O3 is key to increasing breakdown voltages of Ga2O3 based power devices. Therefore, transport and capacitance spectroscopy studies have been performed to better understand the origin of unintentional doping in Ga2O3. Previously unobserved unintentional donors in commercially available Ga2O3 substrates have been electrically characterized via temperature dependent Hall effect measurements up to 1000 K and found to have a donor energy of 110 meV. The existence of the unintentional donor is confirmed by temperature dependent admittance spectroscopy, with an activation energy of 131 meV determined via that technique, in agreement with Hall effect measurements. With the concentration of this donor determined to be in the mid to high 1016 cm−3 range, elimination of this donor from the drift layer of Ga2O3 power electronics devices will be key to pushing the limits of device performance. Indeed, analytical assessment of the specific on-resistance (Ronsp) and breakdown voltage of Schottky diodes containing the 110 meV donor indicates that incomplete ionization increases Ronsp and decreases breakdown voltage as compared to Ga2O3 Schottky diodes containing only the shallow donor. The reduced performance due to incomplete ionization occurs in addition to the usual tradeoff between Ronsp and breakdown voltage.

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“…As shown as example in Fig. , the maximum allowable current density of GaN 4.7 kV p–n diode is 90 A cm −2 , and its corresponding voltage is 3.36 V. The latter voltage, however, is comparable to that of a 4H‐SiC 3.5 kV junction‐barrier Schottky diode, i.e., 3.12 V . With respect to the characteristics of 6.5 kV insulated‐gate bipolar transistors (IGBTs), GaN devices might also have little room to compete against 4H‐SiC devices (Fig.…”

Section: Vertical Gan Bipolar Power Devicesmentioning

confidence: 99%

“…Even if τ is short, effective τ of direct semiconductors is known to be increased by reabsorption of radiative recombination (i.e., photon recycling) . And large J in small non‐self‐aligned mesa‐type GaN p–n diodes has actually been measured . However, conventional photon‐recycling [hereinafter called “intrinsic photon‐recycling (IPR)”] itself cannot quantitatively explain the measured large J , which is discussed in Section 2.2.…”

Section: Introductionmentioning

confidence: 99%

Vertical GaN bipolar devices: Gaining competitive advantage from photon recycling

Mochizuki

2016

Physica Status Solidi (a)

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It is shown that peripheral current Ip flows in non‐self‐aligned mesa‐type p–n diodes but that Ip flowing in GaN diodes cannot be explained by elongated minority‐carrier lifetime associated with intrinsic photon recycling (IPR), i.e., reabsorption of radiative recombination. Accordingly, possible increase in the ratio of deep Mg acceptors (energy level: EA) due to extrinsic photon recycling (EPR) is proposed, and the effect of EPR is expressed as an effective EA. Due to the limit on the power dissipation of a semiconductor package, EPR works effectively in the case of zero‐offset bipolar‐junction transistors, whose base doping level is limited in terms of emitter‐injection efficiency. Measured and simulated forward‐current–voltage characteristics of non‐self‐aligned mesa‐type GaN p–n diodes.

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Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV

Cited by 198 publications

References 9 publications

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices

Vertical GaN bipolar devices: Gaining competitive advantage from photon recycling

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