Vertical GaN-on-GaN pn power diodes with Baliga figure of merit of 27 GW/cm2

Talesara, Vishank; Zhang, Yuxuan; Vangipuram, Vijay Gopal Thirupakuzi; Zhao, Hongping; Lu, Wu

doi:10.1063/5.0135313

Cited by 15 publications

(4 citation statements)

References 22 publications

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“…A very recent study reports further improvements in device performance [67]. In a vertical device on a bulk GaN substrate, the authors report the use of an optimized guard ring structure aimed at maximizing breakdown voltage.…”

Section: Device Performance Resultsmentioning

confidence: 99%

Progress in Ammonothermal Crystal Growth of Gallium Nitride from 2017–2023: Process, Defects and Devices

Stoddard

Pimputkar

2023

Crystals

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Gallium nitride continues to be a material of intense interest for the ongoing advancement of electronic and optoelectronic devices. While the bulk of today’s markets for low-performance devices is still met with silicon and blue/UV LEDs derived from metal–organic chemical vapor deposition gallium nitride grown on foreign substrates such as sapphire and silicon carbide, the best performance values consistently come from devices built on bulk-grown gallium nitride from native seeds. The most prominent and promising of the bulk growth methods is the ammonothermal method of high-pressure solution growth. The state-of-the-art from the last five years in ammonothermal gallium nitride technology is herein reviewed within the general categories of growth technology, characterization and defects as well as device performance.

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Section: Device Performance Resultsmentioning

confidence: 99%

Progress in Ammonothermal Crystal Growth of Gallium Nitride from 2017–2023: Process, Defects and Devices

Stoddard

Pimputkar

2023

Crystals

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“…Of these many materials, the nitrides continue to be of particular interest in a number of applications, from high hardness materials 1,2 to high oxygen resistance thermal materials 3 to strong catalysts 4–7 . As single crystals, many of the nitrides have favorable properties for opto‐electronic use, including (ultra‐)wide band gaps 8,9 and high reverse bias diode breakdown voltages 10,11 . Many of the covalent nitrides (especially Group III nitrides like BN, AlN, GaN, InN) offer particular advantages over other electronic material candidates such as silicon, GaAs and carbides like SiC.…”

Section: Introductionmentioning

confidence: 99%

Prospective view of nitride material synthesis

Stoddard

Pimputkar

2023

Int J Ceramic Engine & Sci

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The field of nitride‐based materials is producing some of the most promising and interesting candidates for advanced technology applications. Novel formulations and polymorphs are of interest for applications requiring one or more of: high hardness, high oxygen resistance at elevated temperatures, catalytic action, semiconductor light sources, and (ultra‐)wide band gap electronics. The synthesis of nitrides with excellent single crystal structural quality of an appreciable size is challenging whether working in solution growth techniques like ammonothermal and flux growth, or in vapor deposition techniques. This paper presents a perspective on recent developments in equipment and techniques for single crystal nitride synthesis with a view toward progress anticipated in the next 5–10 years.

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“…The possibility of realizing high‐performance vertical GaN power devices has been further bolstered with the availability of bulk GaN substrates with low threading dislocation densities (≈2 × 10 5 cm −2 ). [ 3–5 ] GaN‐on‐GaN vertical power devices have shown significant improvements in recent years, with devices demonstrating record breakdown voltage of ≈7.86 kV for vertical GaN p–n diodes. [ 6 ]…”

Section: Introductionmentioning

confidence: 99%

Suppressing Carbon Incorporation in Metal–Organic Chemical Vapor Deposition GaN Using High‐Offcut‐Angled Substrates

Thirupakuzi Vangipuram,

Zhang,

Zhao

2023

Physica Rapid Research Ltrs

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Carbon (C) is a common impurity that acts as a compensator within GaN grown via metal–organic chemical vapor deposition (MOCVD). Reducing C in GaN will help reduce the compensation level and provide a route to achieve GaN with reliably low effective doping for high‐power device applications. GaN grown with fast growth rates on bulk GaN with various offcut angles via conventional‐MOCVD (C‐MOCVD) and laser‐assisted MOCVD (LA‐MOCVD) is compared and analyzed. C‐incorporation effects are compared through quantitative secondary‐ion mass spectroscopy analysis in GaN grown on GaN substrate with offcut angles of 4° and 0.3° toward m‐plane over a wide range of growth rates by C‐MOCVD and LA‐MOCVD. For both growth techniques investigated, a significant reduction in C‐incorporation is observed when a high‐offcut‐angle (4°) substrate is used as compared to a lower‐offcut‐angle (0.3°) substrate. With C‐MOCVD, at the fastest growth condition investigated (17.26 μm h−1 at 0.3°‐offcut, 15.25 μm h−1 at 4°‐offcut), a reduction in [C] by 21.2X is observed with an increase in the offcut angle from 0.3° to 4°. A 82.6X reduction in [C] is observed with the similar fast growth condition via LA‐MOCVD on GaN with 4° offcut angle (9.78 μm h−1) as compared to C‐MOCVD at 0.3° offcut angle (17.26 μm h−1).

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Vertical GaN-on-GaN pn power diodes with Baliga figure of merit of 27 GW/cm2

Cited by 15 publications

References 22 publications

Progress in Ammonothermal Crystal Growth of Gallium Nitride from 2017–2023: Process, Defects and Devices

Progress in Ammonothermal Crystal Growth of Gallium Nitride from 2017–2023: Process, Defects and Devices

Prospective view of nitride material synthesis

Suppressing Carbon Incorporation in Metal–Organic Chemical Vapor Deposition GaN Using High‐Offcut‐Angled Substrates

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