Vertical gallium nitride schottky diodes for power switching applications.

Kolli, Sowmya

doi:10.18297/etd/2898

Cited by 1 publication

(1 citation statement)

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“…The leakage current density of optimized SBD is ∼10 −9 A/cm 2 @10 V and 10 −5 A/cm 2 @50 V, which is three orders of magnitude lower than that of the reference, as well. Leakage current along the sidewall is one of the main leakage path for quasi-vertical GaN SBD, as ICP dry etch might create surface damage (e.g., N vacancies) [28], [29]. Therefore, post-mesa nitridation technique has been developed to remove the sidewall damage and then reduce the leakage.…”

Section: Resultsmentioning

confidence: 99%

Low Leakage and High Forward Current Density Quasi-Vertical GaN Schottky Barrier Diode With Post-Mesa Nitridation

Kang

Sun

Zheng

et al. 2021

IEEE Trans. Electron Devices

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In this brief, a high-performance quasi-vertical GaN Schottky barrier diode (SBD) on sapphire substrate with post-mesa nitridation process is reported, featuring a low damaged sidewall with extremely low leakage current. The fabricated SBD with a drift layer of 1 μm has achieved a very high ON/OFF current ratio (I ON /I OFF ) of 10 12 with a low leakage current of ∼10 −9 A/cm 2 @-10 V, high forward current density of 5.2 kA/cm 2 at 3 V in dc, a low differential specific ON-resistance (R ON,sp ) of 0.3 m•cm 2 , and ideality factor of 1.04. In addition, a transmission-line-pulse (TLP) I-V test was carried out and 53 kA/cm 2 at 30 V in pulsed measurement was obtained without device failure, exhibiting a great potential for high power applications.

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Section: Resultsmentioning

confidence: 99%