Superlattices and Microstructures volume 40, issue 4-6, P507-512 2006 DOI: 10.1016/j.spmi.2006.10.008 View full text
S. Leconte, E. Monroy, J.-M. Gérard

Abstract: In this work, we investigate the electronic structure and vertical electron transport through GaN/AlN/GaN single-barrier structures with different AlN thickness, grown by plasma-assisted molecular beam epitaxy. Conductive and capacitive characterization has been performed, and the experimental results are interpreted by comparison with 1D self-consistent simulations. Capacitive measurements reveal a complete depletion of the top GaN layer, and the formation of a two-dimensional electron gas at the bottom inte…

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