Vertical Electrolyte-Gated Transistors Based on Printed Single-Walled Carbon Nanotubes

Rother, Marcel; Kruse, Adelaide; Brohmann, Maximilian; Matthiesen, Maik; Grieger, Sebastian; Higgins, Thomas M.; Zaumseil, Jana

doi:10.1021/acsanm.8b00756

Cited by 26 publications

(30 citation statements)

References 61 publications

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“…Solution‐processed monochiral SWCNTs are also compatible with additive manufacturing techniques. Aerosol jet printed devices using PFO‐BPy‐wrapped (6,5) SWCNTs have been fabricated in both traditional FET147 and unconventional vertical electrolyte‐gated transistor (VEGT) designs,148 demonstrating high reproducibility, ON‐state conductance, and ON/OFF ratios. While most of these FETs have shown ambipolar charge transport, n‐type and p‐type doping of (6,5) SWCNT networks has been achieved through the use of 1,2,4,5‐tetrakis(tetramethylguanidino) benzene (ttmgb) and molybdenum tris(1‐(trifluoroacetyl)‐2‐(trifluoromethyl)ethane‐1,2‐dithiolene) (Mo(tfdCOCF 3 ) 3 ), respectively, enabling the fabrication of complementary inverters with high voltage gain (up to 52), rail‐to‐rail operation, and low power dissipation (45 nW) 149…”

Section: Computing Applications Of Chirality‐enriched Swcntsmentioning

confidence: 99%

Chirality‐Enriched Carbon Nanotubes for Next‐Generation Computing

Rojas

Hersam

2020

Advanced Materials

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electronic, [3-4,4] and functional requirements. [5] Conventional silicon integrated circuit (IC) technology faces significant challenges in meeting these demands due to its limited mechanical flexibility, high temperature processing, and scaling limitations. Emerging alternative computing platforms based on other crystalline semiconductors suffer from similar limitations. Consequently, nextgeneration computing necessitates the exploration of radically different electronic materials. Single-walled carbon nanotubes (SWCNTs) are among the most promising and highly studied nanoelectronic materials. Due to their small size, [6,7] solutionprocessability, [8] chemical stability, [9] and chirality-dependent optoelectronic properties, [10] SWCNTs offer a number of unique advantages and are compatible with the complex requirements of future computing devices. Recent advances in chiral enrichment of polydisperse SWCNTs [8,10] have allowed their use as semiconducting channels in diverse settings including charge transport devices, [2] optical emitters and detectors, [11,12] and chemical sensors. [2,3,13,14] With this tunable functionality, a range of SWCNT-based computing applications have been realized, such as printed digital logic, [15] sub-10 nm complementary metal-oxide-semiconductor (CMOS) field-effect transistors (FETs), [16] neuromorphic devices, [17] single-photon emitters (SPE), [18] and enantiomer-recognition sensors. [14] Herein, we discuss recent advances in SWCNT-based computing technologies that process, manage, and communicate information, with an emphasis on the enabling role of chiral enrichment. Section 2.1 defines the different levels of chiral enrichment. Sections 2.2 and 2.3 describe direct growth methods and post-processing purification of SWCNTs for electronic-type and monochiral enrichment. Section 3 discusses applications of electronic-type-enriched SWCNTs such as wearables, highly scaled FETs, 3D logic-memory integration, and neuromorphic devices. Section 4 outlines applications of monochiral-enriched SWCNTs including monochiral FETs, optical emitters, photodetectors, and optoelectronic ICs. Section 5 considers recent progress toward enantiomerically pure SWCNTs. Finally, Section 6 presents an outlook for SWCNTs in next-generation computing applications including a delineation of remaining challenges and future opportunities. For the past half century, silicon has served as the primary material platform for integrated circuit technology. However, the recent proliferation of nontraditional electronics, such as wearables, embedded systems, and lowpower portable devices, has led to increasingly complex mechanical and electrical performance requirements. Among emerging electronic materials, single-walled carbon nanotubes (SWCNTs) are promising candidates for next-generation computing as a result of their superlative electrical, optical, and mechanical properties. Moreover, their chirality-dependent properties enable a wide range of emerging electronic applications including sub-10 nm complementary fie...

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Section: Computing Applications Of Chirality‐enriched Swcntsmentioning

confidence: 99%

Chirality‐Enriched Carbon Nanotubes for Next‐Generation Computing

Rojas

Hersam

2020

Advanced Materials

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“…[233,234] For the on-current it was assumed that all semiconducting nanotubes become fully conducting at a certain gate voltage. [226] Only in electrolyte-gated SWCNT network transistors [241][242][243] thicker films will also lead to higher on-currents. [235,236] Geometric parameters such as density of the network, the length and orientation of the nanotubes were taken into account.…”

Section: Charge Transportmentioning

confidence: 99%

“…This observation can be explained by the limited gating effect on nanotubes in the second layer, which are very efficiently screened by those in the first layer . Only in electrolyte‐gated SWCNT network transistors thicker films will also lead to higher on‐currents. In comparison to that, the dependence of mobility on the film thickness in polymer FETs is more complex.…”

Section: Optical and Electronic Propertiesmentioning

confidence: 99%

“…Unlike semiconducting polymer films that feature a small amount of free volume and nanoscale voids that might be occupied by water and thus can trap charges, even a dense network of carbon nanotubes is rather porous with substantial free space and a large surface of bare nanotubes. This enables, for example, very efficient electrochemical doping of thick nanotube networks for electrochromic cells or electrolyte‐gated transistors as ions (e.g., of an ionic liquid, see Section ) can easily penetrate . However, this exposure of active surface also means that any interaction (wanted or unwanted) with other nanotubes (e.g., in bundles), with the atmosphere, dielectric and substrate becomes highly important.…”

Section: Optical and Electronic Propertiesmentioning

confidence: 99%

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Semiconducting Single‐Walled Carbon Nanotubes or Very Rigid Conjugated Polymers: A Comparison

Zaumseil

2018

Adv Elect Materials

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With the ability to produce large amounts of purely semiconducting and even monochiral dispersions of single-walled carbon nanotubes (SWCNT) their application as a bulk material in thin film devices on a large scale becomes feasible. Their physical properties, processing, and final devices are quite similar to those of semiconducting polymers. In the extreme case one may view carbon nanotubes as very long, rigid, and fully conjugated polymers. This analogy raises the question whether the knowledge accumulated over the last two decades of processing and studying conjugated polymers could be transferred to solution-processed nanotube devices. Here, the optical and electronic properties of both materials in solution and in thin films are discussed and compared with a focus on their application in optoelectronic devices. Some striking similarities and common issues are highlighted to show the connection between conjugated polymers and SWCNTs as 1D semiconductors.

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“…[33,36] Due to their high ionic conductivity, the CSPEs can attain over 1 MHz of switching frequency rendering them ideal for applications such as limited pixel AMOLED displays. [36,51] More recently, ionic liquids based gel-type electrolytes have been developed and used widely as gate insulators; [58][59][60][61][62] they also do possess a wide array of favorable properties such as, nearly zero volatility/vapor pressure, nonflammability, high conductivity and chemical stability. [63,64] However, from an applications standpoint, mechanical integrity is a must for electrolytic materials and hence polymers have been used as gelators for this purpose.…”

Section: Introductionmentioning

confidence: 99%

A Comparative Study on Printable Solid Electrolytes toward Ultrahigh Current and Environmentally Stable Thin Film Transistors

Cherukupally

Divya

Dasgupta

2020

Adv Elect Materials

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kinds of solid electrolytes [29-40] have been used as the gate insulators. Within this solution processed/printable semiconductor technologies, inorganic oxides hold paramount positions owing to their unparalleled transport properties, abundance and low cost. [41-43] In fact, the performance of printed oxide TFTs have steadily improved over the recent times and have certainly become substantially superior to their organic counterparts. In this regard, among the oxide semiconductors of choice, indium oxide have received specific attention due to their chemical and environmental stability resulting in high device lifetime and particularly high carrier mobility which can be easily reproduced even when they are solution processed. [44-47] In the present study, the indium oxide precursor ink has long been adjusted for its easy printability, homogeneous film formation and improved electronic transport/carrier mobility values. With this thoroughly optimized semiconductor material, different solid electrolytic insulators in the form of CSPEs and ion gels have been examined for their device performance and relative environmental stability. Recently, solution processed high-k oxide dielectrics have also shown good promise with low process temperature and device performance. However, high performance solid electrolytes may always offer crucial advantage in terms of semiconductor/insulator interface quality, high gating efficiency, easy printability, room temperature processability and high capacitance values enabling extremely low operating voltages of the TFTs (<2 V). [38,48-51] The first notable instance of employing electrolytes in fieldeffect transistors (FETs) can be traced back to the work carried out by Bergveld in 1970, which has later been used as ion-sensitive FET sensors. [52] Tardella and Chazalviel in 1985 studied nonaqueous electrolytes. [53] One of the earliest examples of solid electrolyte has been poly(ethylene oxide) (PEO) doped with lithium salt. [54] In this regard, Frisbie and co-workers had reported solid polymer electrolyte based on mixture of lithium perchlorate (LiClO 4) salt in a PEO polymer matrix to be used as gate insulator in electronic devices. [55,56] As a result of the increased cross-linking points due to the interaction between the Li + and the PEO chains, the ion transport in these electrolytes is primarily dependent on the temperature and the Printed oxide thin film transistors (TFTs) have outperformed their organic counterparts in the recent past; printable solid electrolytic insulators have also emerged as a suitable alternative to oxide dielectrics. In the present study, multiple composite solid polymer electrolytes (CSPEs) and an easyto-formulate ion gel are fabricated and characterized for their double-layer capacitance (C DL) values and the quality of electrostatic coupling. In the next step, alongside printed In 2 O 3 as the semiconductor channel, the performance of the solid electrolytes is evaluated using printed top-gate TFTs. The semiconductor ink formulation and the device ar...

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Vertical Electrolyte-Gated Transistors Based on Printed Single-Walled Carbon Nanotubes

Cited by 26 publications

References 61 publications

Chirality‐Enriched Carbon Nanotubes for Next‐Generation Computing

Chirality‐Enriched Carbon Nanotubes for Next‐Generation Computing

Semiconducting Single‐Walled Carbon Nanotubes or Very Rigid Conjugated Polymers: A Comparison

A Comparative Study on Printable Solid Electrolytes toward Ultrahigh Current and Environmentally Stable Thin Film Transistors

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