Variation of the density of states in amorphous GdSi at the metal-insulator transition

Bokacheva, L.; Teizer, W.; Hellman, F.; Dynes, R. C.

doi:10.1103/physrevb.69.235111

Cited by 16 publications

(9 citation statements)

References 50 publications

(55 reference statements)

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“…Though the energy integral in Eq. (20) can be done analytically, we left it unevaluated for compactness. For weak screening (κ p F ), the Hartree contribution is much smaller than the Fock one (as in the diffusive limit).…”

Section: Yukawa Potential and Parabolic Dispersionmentioning

confidence: 99%

Ballistic correction to the density of states in an interacting three-dimensional metal

Antonenko

Skvortsov

2020

Phys. Rev. B

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We study the tunneling density of states (DOS) in an interacting disordered three-dimensional metal and calculate its energy dependence in the quasiballistic regime, for the deviation from the Fermi energy, E − EF , exceeding the elastic scattering rate. In this region, the DOS correction originates from the interplay of the interaction and single-impurity scattering. Depending on the distance between the interaction point and the impurity, one should distinguish (i) the smallest scales of the order of the Fermi wavelength and (ii) larger spatial scales of the order of vF /|E − EF |. In two dimensions, the large-scale contribution prevails, resulting in a nearly universal DOS correction. The peculiarity of Friedel oscillations in three dimensions is that the contributions from small and large scales are typically comparable, making the DOS correction sensitive to the details of the interaction and demonstrating a significant particle-hole asymmetry. On the other hand, we show that the non-analytic part of the DOS is determined by large scales and can be expressed in terms of the Fermi-surface characteristics only.

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Section: Yukawa Potential and Parabolic Dispersionmentioning

confidence: 99%

Ballistic correction to the density of states in an interacting three-dimensional metal

Antonenko

Skvortsov

2020

Phys. Rev. B

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“…This subtle inhomogeneity may cause a blurring of the otherwise sharp phase transition, consistent with recent reports on measurements examining the parameter space very close to the transition. 25…”

Section: Resultsmentioning

confidence: 99%

Field- and concentration-tuned scaling of a quantum phase transition in a magnetically doped semiconductor

et al. 2006

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Scaling analysis was performed on families of DC and AC conductivity curves falling on the metallic and insulating sides of the metal-insulator transition in the amorphous magnetically doped semiconductor, a-Gd x Si 1−x. The transport curves were obtained both as a function of discretely varying both the gadolinium dopant concentration, x, and separately by changing an applied magnetic field, H. Both tuning parameters result in correlation length exponents of = 1 and dynamical scaling exponents of z = 2. Temperature-frequency results differ markedly as compared to previous work on the nonmagnetic analog a-Nb x Si 1−x. Our data also indicate a broader than predicted parameter space showing quantum critical behavior, and a phenomenologically determined quantum critical line in the zero temperature x-H plane is presented. The results are explained in terms of a single tunable parameter, namely disorder.

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“…The growth process of these films included a capping layer to help avoid oxidation of the impurities. These produced interesting low-temperature properties, such as the field-induced insulator-to-metal transition in Gd-doped a-Si [77,78]. However, only Mn-doped a-Ge yielded a magnetic ground state where a spin glass transition was observed below 10 K [79].…”

Section: Transition Metal Doping Of Amorphous Silicon and Germaniummentioning

confidence: 97%

“…In references [77][78][79], electron-beam co-evaporation of a transition metal or rare earth elements and Si or Ge produced homogeneously doped amorphous silicon (a-Si) or amorphous Ge (a-Ge) thin films. The growth process of these films included a capping layer to help avoid oxidation of the impurities.…”

Section: Transition Metal Doping Of Amorphous Silicon and Germaniummentioning

confidence: 99%

Si-Based Magnetic Semiconductors

DiTusa

2015

Handbook of Spintronics

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The efforts over the past decade to identify and characterize magnetic semiconducting systems that would be compatible with present-day silicon technologies are reviewed. Investigations that have explored transition metal doping of the group IV semiconductors silicon and germanium are discussed along with intermetallic compounds such as silicides and germanides that may play the role of a magnetic semiconducting source of polarized electrons. Thin films and nanostructures of these materials have been grown by a number of synthesis techniques, and the resulting structural properties, including the important issue of homogeneity of dopants, are critically surveyed. The resulting magnetic and carrier transport properties are also reviewed. List of Abbreviations

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Variation of the density of states in amorphous GdSi at the metal-insulator transition

Cited by 16 publications

References 50 publications

Ballistic correction to the density of states in an interacting three-dimensional metal

Ballistic correction to the density of states in an interacting three-dimensional metal

Field- and concentration-tuned scaling of a quantum phase transition in a magnetically doped semiconductor

Si-Based Magnetic Semiconductors

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