2011
DOI: 10.1016/j.tsf.2011.06.092
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Variation of residual stress in cubic boron nitride film caused by hydrogen addition during unbalanced magnetron sputtering

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Cited by 21 publications
(5 citation statements)
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“…[18] The c-BN phase content (volume fraction) can be estimated from the relative intensities of c-BN (∼1080 cm −1 ) and h-BN (∼1380 cm −1 ). [5] The c-BN content values are 52%, 56%, and 85% for the 0.4 µm, 1.2 µm, and 1.8 µm thick films, respectively. Also, as shown in Fig.…”
Section: Combination Of Interlayer and Two Stage Processmentioning
confidence: 94%
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“…[18] The c-BN phase content (volume fraction) can be estimated from the relative intensities of c-BN (∼1080 cm −1 ) and h-BN (∼1380 cm −1 ). [5] The c-BN content values are 52%, 56%, and 85% for the 0.4 µm, 1.2 µm, and 1.8 µm thick films, respectively. Also, as shown in Fig.…”
Section: Combination Of Interlayer and Two Stage Processmentioning
confidence: 94%
“…The cubic boron nitride (c-BN) films have many desirable properties and have been used in many industry fields. [1][2][3][4][5] One of the promising application fields, which has long been expected, is to use the c-BN film as a protective coating for cutting tools, because it possesses outstanding mechanical properties such as high hardness, wear resistance, and chemical inertness to ferrous metals at high temperatures. [2][3][4][5][6] The films are always required to be thick enough in order to play a protective role.…”
Section: Introductionmentioning
confidence: 99%
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“…Chemical vapor deposition (CVD) and physical vapor deposition (PVD) can be utilized to provide a high-energy ion bombardment on the growing surface and this leads to accumulation of the compressive stress [35][36][37][38][39]. The compressive stress can be diminished by introducing 25% hydrogen into the reactive gasses [40][41][42][43]. By using CVD and sputter processes, c-BN films can be fabricated with a thickness more than 1 μm [44][45][46].…”
Section: Boron Nitride (Bn) Thin Filmsmentioning
confidence: 99%
“…[27,28] Recently, it was suggested that adding 25% hydrogen into the reactive gases would reduce the compressive stress. [29][30][31][32] Combining with a nanocrystalline diamond (NCD) as the gradient layer from Si substrate, 3-µm-thick c-BN films have been deposited by an unbalanced magnetron sputtering method. [33] Theoretical and experimental studies demonstrated that the incorporation of hydrogen into the reactive working plasma is known to preferentially stabilize the cubic structure of BN on the edges of h-BN in the CVD process.…”
Section: Introductionmentioning
confidence: 99%