Vapor−Solid Growth and Characterization of Aluminum Nitride Nanocones

Chun, Liu; Hu, Zheng; Wu, Qiang; Wang, Xizhang; Chen, Yi; Sang, H.; Zhu, Jianxi; Deng, Shaozhi; Xu, Ning

doi:10.1021/ja045682v

Cited by 263 publications

(227 citation statements)

References 43 publications

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“…To significantly enhance the FE properties of SiC emitters, we have developed strategies to leverage the local field enhancement effect by precisely controlling the growth of SiC nanoneedles with sharp tips 25 and to increase the localized density of states at the Fermi level by incorporating suitable dopants. 24,26 The obtained SiC nanoneedles exhibit excellent properties with low E to in a narrow range of 1.11-1.38 V μm − 1 , excellent electron emission stability and high flexibility as well as unprecedented mechanical and electrical robustness.…”

Section: Introductionmentioning

confidence: 99%

Highly flexible and robust N-doped SiC nanoneedle field emitters

et al. 2015

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Flexible field emission (FE) emitters, whose unique advantages are lightweight and conformable, promise to enable a wide range of technologies, such as roll-up flexible FE displays, e-papers and flexible light-emitting diodes. In this work, we demonstrate for the first time highly flexible SiC field emitters with low turn-on fields and excellent emission stabilities. n-Type SiC nanoneedles with ultra-sharp tips and tailored N-doping levels were synthesized via a catalyst-assisted pyrolysis process on carbon fabrics by controlling the gas mixture and cooling rate. The turn-on field, threshold field and current emission fluctuation of SiC nanoneedle emitters with an N-doping level of 7.58 at.% are 1.11 V μm − 1 , 1.55 V μm − 1 and 8.1%, respectively, suggesting the best overall performance for such flexible field emitters. Furthermore, characterization of the FE properties under repeated bending cycles and different bending states reveal that the SiC field emitters are mechanically and electrically robust with unprecedentedly high flexibility and stabilities. These findings underscore the importance of concurrent morphology and composition controls in nanomaterial synthesis and establish SiC nanoneedles as the most promising candidate for flexible FE applications. NPG Asia Materials (2015) 7, e157; doi:10.1038/am.2014.126; published online 23 January 2015 INTRODUCTIONFlexible electronic devices have attracted extensive attention in recent decades because of their numerous promising applications, such as flexible energy-storage devices, wearable energy-harvesting systems and stretchable electronics. 1-4 Among the emerging technologies, there is considerable interest in flexible field emission (FE) emitters due to their unique lightweight, conformable and flexible nature, which give them the significant advantage of being utilized in roll-up flexible FE displays, 3 e-papers 5 and high-performance X-ray tubes. 6 To enable such next-generation flexible devices, flexible cathodes must be used as the fundamental starting component to replace conventional emitters grown on rigid substrates. These flexible emitters should maintain their original or even better FE properties as well as excellent electrical and mechanical performances after bending, compressing, twisting and stretching. 7,8 To date, a variety of cathodes have been developed based on flexible substrates such as polymers, 9 graphene 7 and carbon fabrics. 10 However, material-and fabrication-related obstacles to the realization of high-performance flexible emitters remain.Silicon carbide (SiC) is an excellent material candidate for constructing advanced FE emitters. SiC is a third-generation wide band-gap semiconductor with excellent physical properties such as high strength and stiffness, high-temperature stability, corrosion resistance and high thermal conductivity. [11][12][13] To date, several studies have explored the FE properties of nanostructured SiC emitters

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Section: Introductionmentioning

confidence: 99%

Highly flexible and robust N-doped SiC nanoneedle field emitters

et al. 2015

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“…Recently, AlN nanomaterials are of fresh interests due to their high surface area, low dimensionality and dramatically improved performance for many applications, such as in the field-emission and light-emitting nanodevices [10,11]. Various types of AlN nanostructures with controlled high-aspect-ratio shapes of wires, cones, tips, or belts, have been successfully synthesized by diverse techniques including CVD process [11], direct nitridation [10], or arc-discharge method [12]. In this work, we present a first report of tadpole-shaped (Ni, Al)/AlN nanoparticles synthesized by modified arc-discharge method.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Polarization in Tadpole-Shaped (Ni, Al)/Aln Nanoparticles and Microwave Absorption at High Frequencies

Huang¹,

Xue²,

Lü³

et al. 2011

PIER B

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Abstract-Tadpole-shaped (Ni, Al)/AlN nanoparticles were synthesized via evaporating Ni-Al alloy in a mixed atmosphere of N 2 and H 2 . As a counterpart, the spherical-shaped (Ni, Al)/Al 2 O 3 nanoparticles were also prepared from the same target alloy while in a mixture of Ar and H 2 . The electromagnetic parameters of as-made nanoparticles/paraffin composites were then investigated in the frequency range of 2-18 GHz. Excellent microwave absorption can be obtained for the tadpole-shaped (Ni, Al)/AlN-paraffin composite at high frequencies and in a thin layer, which is thought to be the result of the enhanced polarization in the anisotropic tadpole-shaped nanoparticles. With the increasing of the composite thickness, the frequency of effective reflection loss shifts towards lower frequencies due to an improved impedance match and absorption.

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“…Accordingly, one-dimensional (1D) nanostructures of AlN are expected to be worthy field emission candidates since the 1D geometry effectively increases the enhancement factor that is essential for the turn-on field and high current density required for field emission. 3 Various 1D AlN nanostructures such as nanowhiskers, 4 nanowires, 5,6 nanocones, [7][8][9] naonotubes, [10][11][12] and nanobelts 13 have been synthesized mainly by the direct niridation method in which metallic aluminum reacts with ammonia and/or N2.…”

Section: Introductionmentioning

confidence: 99%

Morphologically Controlled Growth of Aluminum Nitride Nanostructures by the Carbothermal Reduction and Nitridation Method

Jung

2009

Bulletin of the Korean Chemical Society

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One-dimensional aluminum nitride (AlN) nanostructures were synthesized by calcining an Al(OH)(succinate) complex, which contained a very small amount of iron as a catalyst, under a mixed gas flow of nitrogen and CO (1 vol%). The complex decomposed into a homogeneous mixture of alumina and carbon at the molecular level, resulting in the lowering of the formation temperature of the AlN nanostructures. The morphology of the nanostructures such as nanocone, nanoneedle, nanowire, and nanobamboo was controlled by varying the reaction conditions, including the reaction atmosphere, reaction temperature, duration time, and ramping rate. Iron droplets were observed on the tips of the AlN nanostructures, strongly supporting that the nanostructures grow through the vapor-liquid-solid mechanism. The variation in the morphology of the nanostructures was well explained in terms of the relationship between the diffusion rate of AlN vapor into the iron droplets and the growth rate of the nanostructures.

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Vapor−Solid Growth and Characterization of Aluminum Nitride Nanocones

Cited by 263 publications

References 43 publications

Highly flexible and robust N-doped SiC nanoneedle field emitters

Highly flexible and robust N-doped SiC nanoneedle field emitters

Enhanced Polarization in Tadpole-Shaped (Ni, Al)/Aln Nanoparticles and Microwave Absorption at High Frequencies

Morphologically Controlled Growth of Aluminum Nitride Nanostructures by the Carbothermal Reduction and Nitridation Method

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