D. Pastor, S. Hernández, R. Cuscó, L. Artús, R.W. Martin, K.P. O’Donnell, O. Briot, K. Lorenz, E. Alves
Lattice recovery of Eu-implanted GaN has been studied by means of Raman scattering under UV excitation. GaN epilayers implanted at 300 keV with doses ranging from 2 × 10 14 to 4 × 10 15 cm −2 and subsequently annealed at 1000 • C for 20 min show an increasing degree of disorder as the implantation dose increases. Higher temperature annealings up to 1300 • C were also investigated in samples having an AlN capping layer. Disorder related modes, observed in samples annealed at 1000 • C, disappear at higher annea…
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