UV detectors: status and prospects

Son, John

doi:10.1117/12.2324105

Cited by 8 publications

(7 citation statements)

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“…[1,2,3,4,5,6] Furthermore, the corresponding sensor market is expected to grow at a compound annual growth rate of about 30%. [7] Therefore, it is quite surprising that the current semiconductor sensors available in the market suffer from relatively poor UV response, the best sensitivities falling well below 80% at 200-300 nm [8,9]. All the UV applications would greatly benefit from better response, therefore, there is a strong interest to seek for alternative technologies that could provide higher efficiencies in this challenging wavelength regime.…”

Section: Introductionmentioning

confidence: 99%

“…DOI: 10.1103/PhysRevLett.125.117702 Ultraviolet (UV) sensors are currently being utilized in a wide range of applications, including spectroscopy, imaging, flame detection, water purification, and biotechnology-just to name a few [1][2][3][4][5][6]. Furthermore, an annual market growth rate of about 30% is expected [7]. Therefore, it is quite surprising that the semiconductor sensors available in the market suffer from relatively poor UV response, the best sensitivities falling well below 80% at 200-300 nm [8,9].…”

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confidence: 99%

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Black-Silicon Ultraviolet Photodiodes Achieve External Quantum Efficiency above 130%

et al. 2020

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At present ultraviolet sensors are utilized in numerous fields ranging from various spectroscopy applications via biotechnical innovations to industrial process control. Despite of this, the performance of current UV sensors is surprisingly poor. Here, we break the theoretical Shockley-Queisser limit and demonstrate a device with a certified external quantum efficiency (EQE) above 130% in UV range without external amplification. The record high performance is obtained using a nanostructured silicon photodiode with self-induced junction. We show that the high efficiency is based on effective utilization of multiple carrier generation by impact ionization taking place in the nanostructures. While the results can readily have a significant impact on the UV-sensor industry, the underlying technological concept can be applied to other semiconductor materials, thereby extending above unity response to longer wavelengths.

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Section: Introductionmentioning

confidence: 99%

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confidence: 99%

Black-Silicon Ultraviolet Photodiodes Achieve External Quantum Efficiency above 130%

et al. 2020

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“…254 The majority of available UV-PDs are stiff, planar devices that are difficult to integrate into flexible wearable systems. 255 Rigid inorganic materials such as ZnO, gallium nitride (GaN), silicon carbide (SiC), and other wide bandgap semiconductors, offer steady performance and well-established manufacturing techniques. 256−258 However, they are flexible only when the thickness reaches the nanometer level.…”

Section: Organic Field Effect Transistorsmentioning

confidence: 99%

Soft Fiber Electronics Based on Semiconducting Polymer

et al. 2023

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Fibers, originating from nature and mastered by human, have woven their way throughout the entire history of human civilization. Recent developments in semiconducting polymer materials have further endowed fibers and textiles with various electronic functions, which are attractive in applications such as information interfacing, personalized medicine, and clean energy. Owing to their ability to be easily integrated into daily life, soft fiber electronics based on semiconducting polymers have gained popularity recently for wearable and implantable applications. Herein, we present a review of the previous and current progress in semiconducting polymer-based fiber electronics, particularly focusing on smart-wearable and implantable areas. First, we provide a brief overview of semiconducting polymers from the viewpoint of materials based on the basic concepts and functionality requirements of different devices. Then we analyze the existing applications and associated devices such as information interfaces, healthcare and medicine, and energy conversion and storage. The working principle and performance of semiconducting polymer-based fiber devices are summarized. Furthermore, we focus on the fabrication techniques of fiber devices. Based on the continuous fabrication of one-dimensional fiber and yarn, we introduce two-and three-dimensional fabric fabricating methods. Finally, we review challenges and relevant perspectives and potential solutions to address the related problems.

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“…The devices that can function as photodetectors include p-n junction diodes, p-i-n diodes, avalanche photodiodes (APDs), metal-semiconductor-metal (MSM) photodiodes, Schottky barrier diodes, photomultiplier tubes (PMTs), phototransistors, photoFETs, heterostructure diodes, resonant cavity enhanced (RCE) photodiodes, nanostructured diodes, hybrid diodes, and travelling wave detectors. High dynamic range UV imaging and UV communication involve state-of-art photodetectors such as APDs and PMTs [2] [3] [4] [5]. However, APDs exhibit gain upto limited modulation frequencies after which the gain reduces significantly.…”

Section: Conference and Workhop (Multicon-w 2019) International Conmentioning

confidence: 99%

Analysis of Wide-Bandgap Material OPFET UV Detectors for High Dynamic Range Imaging and Communication Applications

Gaitonde¹,

Lohani²

2019

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The ultraviolet (UV) photoresponses of Wurtzite GaN, ZnO, and 6H-SiC-based Optical Field Effect Transistor (OPFET) detectors are estimated with an in-depth analysis of the same considering the generalized model and the front-illuminated model for high resolution imaging and UV communication applications. The gate materials considered for the proposed study are gold (Au) and Indium-Tin-Oxide (ITO) for GaN, Au for SiC, and Au and silver dioxide (AgO 2) for ZnO. The results indicate significant improvement in the Linear Dynamic Range (LDR) over the previously investigated GaN OPFET (buried-gate, front-illuminated and generalized) models with Au gate. The generalized model has superior dynamic range than the front-illuminated model. In terms of responsivity, all the models including buried-gate OPFET exhibit high and comparable photoresponses. Buried-gate devices on the whole, exhibit faster response than the surface gate models except in the AgO 2-ZnO generalized OPFET model wherein the switching time is the lowest. The generalized model enables faster switching than the front-illuminated model. The switching times in all the cases are of the order of nanoseconds to picoseconds. The SiC generalized OPFET model shows the highest 3-dB bandwidths of 11.88 GHz, 36.2 GHz, and 364 GHz, and modest unity-gain cutoff frequencies of 4.62 GHz, 8.71 GHz, and 5.71 GHz at the optical power densities of 0.575 μW/cm 2 , 0.575 mW/cm 2 , and 0.575 W/cm 2 respectively. These are in overall, the highest detection-cum-amplification bandwidths among all the investigated devices. The same device exhibits the highest LDR of 73.3 dB. The device performance is superior to most of the other existing detectors along with comparable LDR, thus, emerging as a high performance photodetector for imaging and communication applications. All the detectors show considerably high detectivities owing to the high responsivity values. The re

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UV detectors: status and prospects

Cited by 8 publications

References 0 publications

Black-Silicon Ultraviolet Photodiodes Achieve External Quantum Efficiency above 130%

Black-Silicon Ultraviolet Photodiodes Achieve External Quantum Efficiency above 130%

Soft Fiber Electronics Based on Semiconducting Polymer

Analysis of Wide-Bandgap Material OPFET UV Detectors for High Dynamic Range Imaging and Communication Applications

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