Using carrier-depletion silicon modulators for optical power monitoring

Yu, Hui; Korn, D.; Pantouvaki, Marianna; Campenhout, Joris Van; Komorowska, Katarzyna; Verheyen, Peter; Lepage, Guy; Absil, P.; Hillerkuss, D.; Alloatti, Luca; Leuthold, Juerg; Baets, Roel; Bogaerts, Wim

doi:10.1364/ol.37.004681

Cited by 37 publications

(26 citation statements)

References 15 publications

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“…4(b), the responsivity is relatively high at low optical power, which makes our device suitable as optical power monitors. Recently reported all-silicon optical power monitors using cavities to enhance the photocurrent have a high responsivity [26], [43]. However, these devices are wavelength independent, only working around resonance wavelengths.…”

Section: Potential Application As Power Monitorsmentioning

confidence: 99%

On-Chip Optical Power Monitor Using Periodically Interleaved P-N Junctions Integrated on a Silicon Waveguide

Zhu

Zhou

Sun

et al. 2014

IEEE J. Select. Topics Quantum Electron.

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We investigate the photocurrent generation with surface-state absorption effect in a silicon waveguide integrated with periodically interleaved p-n junctions. Due to the high electric field (∼5 × 10 5 V/cm) and large depletion area coverage in the waveguide, our device can collect more photocurrent than regular p-i-n and p-n structures. The responsivity of our device is optical power dependent with a higher value at a lower power level. The measured 3-dB bandwidth of the frequency response is 11.5 GHz. Although its responsivity is low compared to that of III-V and Ge photodiodes, its simple fabrication and compatibility with allsilicon photonic devices makes it suitable as on-chip optical power monitors.

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Section: Potential Application As Power Monitorsmentioning

confidence: 99%

On-Chip Optical Power Monitor Using Periodically Interleaved P-N Junctions Integrated on a Silicon Waveguide

Zhu

Zhou

Sun

et al. 2014

IEEE J. Select. Topics Quantum Electron.

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“…Most defects are eliminated by the subsequent RTA. However, there are still some residual defects remaining [3]. These defects introduce corresponding defect states inside the forbidden band of silicon, through which photons at 1.33/1.55 μm can excite electrons from the valley band to the conduction band.…”

Section: Optical Detectionmentioning

confidence: 99%

Optical modulation and detection based on a PN junction embedded silicon waveguide

Yang

Jiang

2013

2013 12th International Conference on Optical Communications and Networks (ICOCN)

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“…For example, responsivities of SiWG PDs by using residual defects in carrier-depletion-based modulators are usually on the order of several mA/W 8–11 . A weak photocurrent is adverse to build a simple, fast and robust feedback control loop.…”

Section: Introductionmentioning

confidence: 99%

Enhancing bulk defect-mediated absorption in silicon waveguides by doping compensation technique

Zhang

Tian

et al. 2018

Sci Rep

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Silicon waveguide photodiodes (SiWG PD) based on the bulk defect-mediated absorption (BDA) of sub-bandgap photons are suitable to realize in-line optical power monitors for silicon photonic integrated circuits. Deep-level states to enable the BDA can be induced by exploiting the ion implantation steps that are used to embed PN junctions for carrier-depletion-based modulators. This manner usually exhibits limited responsivities since relevant processing conditions are optimized for the modulation rather than the BDA. In this letter, we solve this issue with the doping compensation technique. This technique overlaps P-type and N-type implantation windows at the waveguide core. The responsivity is enhanced due to the increased density of lattice defects and the reduced density of free carriers in the compensated silicon. Influences of the dimension of the dopant compensation region on responsivity and operation speed are investigated. As the width of this region increases from 0 μm to 0.4 μm, the responsivity at −5 V is improved from 2 mA/W to 17.5 mA/W. This level is comparable to BDA based SiWG PDs relying on dedicated ion bombardments. On the other hand, a bit-error-rate test at 10 Gb/s suggests that the device with 0.2-μm-wide compensation region exhibits the highest sensitivity.

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Using carrier-depletion silicon modulators for optical power monitoring

Cited by 37 publications

References 15 publications

On-Chip Optical Power Monitor Using Periodically Interleaved P-N Junctions Integrated on a Silicon Waveguide

On-Chip Optical Power Monitor Using Periodically Interleaved P-N Junctions Integrated on a Silicon Waveguide

Optical modulation and detection based on a PN junction embedded silicon waveguide

Enhancing bulk defect-mediated absorption in silicon waveguides by doping compensation technique

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