Universal alignment of hydrogen levels in semiconductors and insulators

Abstract

Hydrogen strongly affects the properties of electronic materials. It is always electrically active, and usually counteracts the prevailing conductivity of the semiconductor. In some materials, however, hydrogen acts as a source of doping.We have developed a model that enables us to predict the electrical activity of hydrogen in any material, based on its band alignment on an absolute energy scale. We discuss the underlying physics, as well as consequences for specific materials, including ZnO and InN.

Spectroscopic ellipsometry and ellipsometric porosimetry studies of CVD low‐k dielectric films

“…We can formulate a hypothesis, that the 4.5 eV band is a doping level of hydrogen content. According to first principles calculation [7], hydrogen incorporation in SiO 2 results in creating doping levels approximately in the center of the band gap, i.e. around 4.5 eV above the valence band.…”

Effect of H2O intentionally doping on photoelectric properties in MOVPE-growth GaN layers

“…The D 0 X emission peaks were observed to dominate the LT-PL spectra for undoped GaN and H 2 O-doped GaN, as shown in Figure 7. [9][10][11][12][13][14] Hydrogenated states (H -) existing, resulting in a non-radiative process, which weakening the radiative emitting. [19] H 2 O impurity existing in GaN layer, which not only effects electrical properties and but also effects the radiative emission and furthermore effects PL intensity.…”

“…In the previous study, the species of potential contaminants exist in gaseous sources and their effects on the properties of the epitaxial GaN layer had been discussed. Oxygen, carbon and hydrogen as main unintentional impurity elements were researched [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] . These unintentionally elements in GaN layers could act as donor or acceptor dopants, which may effect the crystal quality, carrier density, carrier mobility and emission efficiency.…”

Information on hydrogen states in II–VI semiconductor compounds from a study of their muonium analogues

“…An universal conversion level has been proposed on the basis of theoretical work (Ref. [1] and references therein). A tentative muonium threshold level is drawn in Fig.…”

“…Ref. [1] and references therein) after the spectroscopic identification of these states in mSR experiments [2][3][4]. Muonium (m + e À ) behaves in semiconductors like a light isotope of hydrogen and the information obtained by muon studies can be transferred, with the necessary changes, to hydrogen.…”