Unique Ferroelectric Fatigue Behavior and Exceptional High Temperature Retention in Al0.93B0.07N Films

Zhu, Wanlin; He, Fazhi; Hayden, John; Tran, Quyen; Yang, Jihyun; Tipsawat, Pannawit; Foley, Brian; Jackson, Thomas N.; Maria, Jon‐Paul; Trolier‐McKinstry, Susan

doi:10.48550/arxiv.2208.06486

Cited by 1 publication

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Similar behavior has been observed in other ferroelectric capacitors. 53 Consistently, according to the piezoresponse force microscopy (PFM) images (see Supporting Information Figure S8), the piezoelectric response at the electrode borders is weaker than at its center. To sum up, the sketch of the device after the breakdown is shown in Figure 4d.…”

Section: Acs Applied Electronic Materialsmentioning

confidence: 63%

Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf_0.5Zr_0.5O₂Tunnel Junctions

Long

Tan

Sánchez

et al. 2023

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

The recent discovery of ferroelectricity in doped HfO2 has opened perspectives on the development of memristors based on ferroelectric switching, including ferroelectric tunnel junctions. In these devices, conductive channels are formed in a similar manner to junctions based on nonferroelectric oxides. The formation of the conductive channels does not preclude the presence of ferroelectric switching, but little is known about the device ferroelectric properties after conduction path formation or their impact on the electric modulation of the resistance state. Here, we show that ferroelectricity and related sizable electroresistance are observed in pristine 4.6 nm epitaxial Hf0.5Zr0.5O2 (HZO) tunnel junctions grown on Si. After a soft breakdown induced by the application of suitable voltage, the resistance decreases by about five orders of magnitude, but signatures of ferroelectricity and electroresistance are still observed. Impedance spectroscopy allows us to conclude that the effective ferroelectric device area after the breakdown is reduced, most likely by the formation of conducting paths at the edge.

show abstract

Section: Acs Applied Electronic Materialsmentioning

confidence: 63%

Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf_0.5Zr_0.5O₂Tunnel Junctions

Long

Tan

Sánchez

et al. 2023

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

show abstract

Unique Ferroelectric Fatigue Behavior and Exceptional High Temperature Retention in Al0.93B0.07N Films

Cited by 1 publication

References 0 publications

Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf_0.5Zr_0.5O₂Tunnel Junctions

Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf_0.5Zr_0.5O₂Tunnel Junctions

Contact Info

Product

Resources

About

Unique Ferroelectric Fatigue Behavior and Exceptional High Temperature Retention in Al0.93B0.07N Films

Cited by 1 publication

References 0 publications

Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf0.5Zr0.5O2Tunnel Junctions

Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf0.5Zr0.5O2Tunnel Junctions

Contact Info

Product

Resources

About

Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf_0.5Zr_0.5O₂Tunnel Junctions

Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf_0.5Zr_0.5O₂Tunnel Junctions