Unipolar resistive switching effect in YMn1−δO3 thin films

Yan, Z. B.; Li, S. Z.; Wang, K. F.; Liu, J.-M.

doi:10.1063/1.3280380

Cited by 44 publications

(30 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Our conclusions are in very good agreement with work on unipolar resistive switching in YMn 1−δ O 3 thin films. 22 There, formation of filaments localized at the defects induced by Mn vacancies was induced by the soft breakdown process in high electric field. Their rupture was assigned to the local redox reaction of Mn 4+ to Mn 3+ due to remarkable Joule heating.…”

Section: Contribution Of the Grain Boundaries And Charged Domain Wmentioning

confidence: 99%

See 1 more Smart Citation

Resistive switching in polycrystalline YMnO3 thin films

et al. 2014

View full text Add to dashboard Cite

We report a unipolar, nonvolatile resistive switching in polycrystalline YMnO3 thin films grown by pulsed laser deposition and sandwiched between Au top and Ti/Pt bottom electrodes. The ratio of the resistance in the OFF and ON state is larger than 103. The observed phenomena can be attributed to the formation and rupture of conductive filaments within the multiferroic YMnO3 film. The generation of conductive paths under applied electric field is discussed in terms of the presence of grain boundaries and charged domain walls inherently formed in hexagonal YMnO3. Our findings suggest that engineering of the ferroelectric domains might be a promising route for designing and fabrication of novel resistive switching devices.

show abstract

Section: Contribution Of the Grain Boundaries And Charged Domain Wmentioning

confidence: 99%

“…So far, the predominantly investigated application of YMnO 3 is the metal-ferroelectric-semiconductor field-effect-transistor (MFSFET), [19][20][21] and there are only few reports about resistive switching of both hexagonal 22 and orthorhombic 23 YMnO 3 thin films. In this work we analyze the unipolar resistive switching behavior of hexagonal YMnO 3 .…”

mentioning

confidence: 99%

Resistive switching in polycrystalline YMnO3 thin films

et al. 2014

View full text Add to dashboard Cite

show abstract

“…It should be pointed out here that even the phase differences of the three ! are constant and so based on these observations and using (8), the three ! (in Ω)…”

Section: Memristors-based Phase Shift Oscillator With Unequalmentioning

confidence: 99%

“…Apart from the graphical method of estimating ! , using (8) and (10) ! can be analytically expressed as:…”

Section: Frequency Of Oscillationmentioning

confidence: 99%

“…After the successful physical model implemented by HP, Memristor has enraptured the research world for its unprecedented behavior. Researchers have demonstrated its potential for being used as a memory switch which offers the replacement of conventional transistor [7][8][9][10][11]. The nonvolatile memory applications of Memristor lead to more dense architecture where this nanoscale element is being implemented in crossbar arrays to perform either as a latch or logic module [12][13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Non linear dynamics of memristor based 3rd order oscillatory system

Talukdar

Radwan

Salama

2012

Microelectronics Journal

View full text Add to dashboard Cite

show abstract

High‐Performance Programmable Memory Devices Based on Co‐Doped BaTiO₃

et al. 2011

Self Cite

View full text Add to dashboard Cite

Recently, resistive random access memory (RRAM) devices have attracted great attentions for a variety of advantages such as high-density, high-speed, low-power, and thus promising applications in next-generation nonvolatile memory technology. [1][2][3][4] The memory effect is realized through switching between high resistance state (HRS) and low resistance state (LRS), controlled by electric fi eld with either opposite polarity (bipolar) or different magnitude (unipolar). In understanding this resistive switching (RS) effect, quite a number of microscopic mechanisms have been proposed, while the formation/rupture of conductive fi laments in insulating matrix as one of the major switching mechanisms has been intensively studied. [3][4][5] It is demonstrated that the composition of the conductive fi laments and their formation/rupture are remarkably materials-dependent, thus the RRAM device performance is materials dependent too. For the favored device performance, complex transition metal oxides may be the most promising candidates. [ 3 ] The strong correlation of electrons in these oxides brings out rich competing phenomena between various electronic phases in a delicate balance, allowing a phase change and thus dramatic change of the electrical property, e.g. resistance, in response to a minute external perturbation, e.g., an applied electric fi eld. [ 6 ] Furthermore, the atomic and/or electronic reconstruction at grain boundaries or doping centers in these oxides enriches the electronic phases, providing an opportunity for advanced electronics. [ 7 , 8 ] By an extensive testing of various oxide materials in terms of the RRAM performance, we eventually choose ferroelectric BaTiO 3 for the present study. A low-doping at the Ti-site can introduce itinerant electrons, leading to the presence of inhomogeneous state, i.e., the coexistence of metallic and ferroelectric phases. [ 9 ] As an electric fi eld is applied on this inhomogeneous state, the local Joule heating induced by inhomogeneous current distribution may lead to the reconstruction of local atomic and/or electronic phases, causing the large change in conductance. [ 8 , 10 ] Besides, earlier works suggested that the ferroelectric displacements will also change the electronic structure. [ 11 ] Hence, BaTiO 3 -based materials offer a good opportunity to develop the RRAM devices with more promising functionalities. In this work, we fabricate 5at% Co-doped BaTiO 3 (BTCO) fi lms. The unipolar RS characteristics with the endurance of more than 10 5 and switching time of less than 10 ns in addition to other preferred properties are demonstrated.We fabricated the BTCO-based memory cell, with the entire materials stack (thicknesses) of Au(400 nm)/BTCO(400 nm)/ Pt(300 nm)/Ti(50 nm)/SiO 2 (500 nm)/Si. The X-ray diffraction (XRD) data indicate that the BTCO fi lms are polycrystalline, as shown in Figure 1 a. Figure 1 b and c depict a schematic drawing of the measurement confi guration and the scanning electron Figure 1 . (a) XRD data of the as-prepared BaTi 0.95 Co ...

show abstract

Unipolar resistive switching effect in YMn1−δO3 thin films

Cited by 44 publications

References 19 publications

Resistive switching in polycrystalline YMnO3 thin films

Resistive switching in polycrystalline YMnO3 thin films

Non linear dynamics of memristor based 3rd order oscillatory system

High‐Performance Programmable Memory Devices Based on Co‐Doped BaTiO₃

Contact Info

Product

Resources

About

Unipolar resistive switching effect in YMn1−δO3 thin films

Cited by 44 publications

References 19 publications

Resistive switching in polycrystalline YMnO3 thin films

Resistive switching in polycrystalline YMnO3 thin films

Non linear dynamics of memristor based 3rd order oscillatory system

High‐Performance Programmable Memory Devices Based on Co‐Doped BaTiO3

Contact Info

Product

Resources

About

High‐Performance Programmable Memory Devices Based on Co‐Doped BaTiO₃