Unintentional hydrogen concentration in liquid encapsulation Czochralski grown III–V compounds

Articles you may be interested inAnomalous diffusion of Ga and As from semi-insulating GaAs substrate into MOCVD grown ZnO films as a function of annealing temperature and its effect on charge compensation AIP Advances 4, 057108 (2014);High energy light ions have been used to engineer the electrical properties of semi-insulating InP and GaAs by creation and annihilation of native defects. Due to light mass, high energy ions lose most of their energy during flight inside the material by electronic excitation, which also modifies the charge states of the defect. Imbalance in charge compensation caused by irradiation induced defect engineering results in the modification of resistivity of the semi-insulating samples. The activation energies of the defect levels responsible for the modified resistivity have been estimated from the measurement of thermally activated currents. It is shown that the modified charge compensation is due to annihilation and/or creation of native defects depending on the material ͑GaAs or InP͒ and the fluence of irradiated ions. It has also been observed that annealing does not have any effect on modified compensation in InP, but in the case of GaAs, compensation recovers after thermal annealing.

Section: Ftir Resultsmentioning

confidence: 99%

Modification of charge compensation in semi-insulating semiconductors by high energy light ion irradiation

Kabiraj

Grötzschel

Ghosh

2008

“…Previous work has shown that unintentional hydrogen contamination in these samples can be high (ϳ10 16 cm Ϫ3 ), 16 and this may well come from the high water content in B 2 O 3 . 17 The electron concentration and mobility of these samples are around 3ϫ10 15 cm Ϫ3 and 3000 cm 2 /v s, respectively. The annealing of these wafers was carried out in a sealed quartz tube which had been cleaned and evacuated.…”

Section: ͓S0021-8979͑99͒07616-1͔mentioning

confidence: 90%

“…Some acceptor impurity hydrogen complexes have also been found in as-grown LEC InP. 17 These can also increase the acceptor concentration by thermal decomposition. However, the second conversion into n type for our samples indicates that donor defects have been formed most likely by phosphorus atoms occupying indium vacancies.…”

Section: ͓S0021-8979͑99͒07616-1͔mentioning

confidence: 99%

Thermally induced conduction type conversion in n-type InP

Fung

Zhao

Beling

et al. 1999

n-type semiconducting InP is changed into p-type semiconducting by short time annealing at 700 °C. Further annealing for a longer time leads to a second conduction-type conversion changing the material back to n type again but with a much higher resistivity. These conduction conversions indicate the formation of both acceptor and donor defects and the progressive variation of their relative concentrations during annealing.

“…The weak absorption peak of sample B-N-01 indicates that the concentration of this defect in this particular sample is low. The concentration of V In H 4 , estimated by the calibration data of the Zn-H complex in InP, 24,25 is in the range of 10 15 -10 16 cm Ϫ3 . In sample B-N-01 it is at least five times smaller.…”

Section: B Optical Measurementsmentioning

confidence: 99%

Compensation defects in annealed undoped liquid encapsulated Czochralski InP

Fung

Zhao

et al. 1999

As-grown undoped n-type semiconducting and annealed undoped semi-insulating ͑SI͒ liquid encapsulated Czochralski ͑LEC͒ InP has been studied by temperature dependent Hall measurement, photoluminescence spectroscopy, infrared absorption, and photocurrent spectroscopy. P-type conduction SI InP can frequently be obtained by annealing undoped LEC InP. This is caused by a high concentration of thermally induced native acceptor defects. In some cases, it can be shown that the thermally induced n-type SI property of undoped LEC InP is caused by a midgap donor compensating for the net shallow acceptors. The midgap donor is proposed to be a phosphorus antisite related defect. Traps in annealed SI InP have been detected by photocurrent spectroscopy and have been compared with reported results. The mechanisms of defect formation are discussed.