Uniform Zinc Oxide Nanowire Arrays Grown on Nonepitaxial Surface with General Orientation Control

Zhu, Ren; Zhang, Wengui; Li, Chao; Yang, Rusen

doi:10.1021/nl402476u

Cited by 31 publications

(17 citation statements)

References 42 publications

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“…Many examples of nanostructures have been studied and fabricated as devices: nanoparticles, 15 nanorods, [16][17][18][19] nanowires, 13,20,21 nanoplates, 22 as well as urchin-like structures 23 being the most common.…”

Section: Introductionmentioning

confidence: 99%

Control of oxygen vacancies in ZnO nanorods by annealing and their influence on ZnO/PEDOT:PSS diode behaviour

Chen

et al. 2018

J. Mater. Chem. C

144

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a ZnO is one of the most widely studied semiconductors due to its direct wide band gap and high exciton binding energy. Due to its ease of synthesis, robustness and low cost, ZnO has been applied in a wide range of devices, including nanogenerators, solar cells, and photodetectors. In this work, ZnO nanorods were synthesized in a single step using an aqueous method at temperatures below 100 1C. The nanorods were annealed in oxygen and nitrogen and a p-type polymer poly(3,4-ethylenedioxythiophene)polystyrene sulfonate (PEDOT:PSS) was spray coated onto the top of ZnO nanorods to form a p-n junction. The I-V characteristics of the device showed that the annealing atmosphere had a significant effect on the rectification ratio of the device. Further analysis using Mott-Schottky, photoluminescence, and X-ray photoelectron spectroscopy (XPS) indicated that oxygen vacancy concentration correlated well with the free electron density in ZnO as well as the rectification ratio of the p-n junction devices. Devices made with ZnO nanorods annealed in nitrogen had a better rectification ratio than oxygen, representing a simple method to improve p-n junction diode behaviour through tuning the defect properties of the nanorods via controlled annealing.

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Section: Introductionmentioning

confidence: 99%

Control of oxygen vacancies in ZnO nanorods by annealing and their influence on ZnO/PEDOT:PSS diode behaviour

Chen

et al. 2018

J. Mater. Chem. C

144

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show abstract

“…In the past few decades, ZnO nanorods have attracted signicant attention 1 because of their unique photoelectrical properties [2][3][4][5][6] such as wide direct band-gap (3.37 eV), electron transport connement, and tunable electrical property by doping. [7][8][9][10][11] Therefore, they have been applied in ultraviolet photodetectors, [12][13][14][15][16] eld electron emission displays, 17 and eld effect transistors (FETs).…”

Section: Introductionmentioning

confidence: 99%

Indium-doped ZnO horizontal nanorods for high on-current field effect transistors

Zhu

Wen

et al. 2017

RSC Adv.

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“…Thus, hydrothermal synthesis is a more convenient and cost-effective approach for the large-scale preparation of well-ordered ZnO nanowire arrays at low temperatures. Recently, numerous hydrothermal growth methods of ZnO nanowires on various substrates have been vigorously explored1617181920212223 and are continuously being evolved. Despite the benefits of hydrothermal synthesis of ZnO nanowires, the necessity of a crystalline ZnO seed layer limits the flexibility of this method due to the requirements of additional vacuum technology and high temperature processes2425.…”

mentioning

confidence: 99%

Metal Catalyst for Low-Temperature Growth of Controlled Zinc Oxide Nanowires on Arbitrary Substrates

Kim

Kwon

2014

Sci Rep

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Zinc oxide nanowires generated by hydrothermal method present superior physical and chemical characteristics. Quality control of the growth has been very challenging and controlled growth is only achievable under very limited conditions using homogeneous seed layers with high temperature processes. Here we show the controlled ZnO nanowire growth on various organic and inorganic materials without the requirement of a homogeneous seed layer and a high temperature process. We also report the discovery of an important role of the electronegativity in the nanowire growth on arbitrary substrates. Using heterogeneous metal oxide interlayers with low-temperature hydrothermal methods, we demonstrate well-controlled ZnO nanowire arrays and single nanowires on flat or curved surfaces. A metal catalyst and heterogeneous metal oxide interlayers are found to determine lattice-match with ZnO and to largely influence the controlled alignment. These findings will contribute to the development of novel nanodevices using controlled nanowires.

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Uniform Zinc Oxide Nanowire Arrays Grown on Nonepitaxial Surface with General Orientation Control

Cited by 31 publications

References 42 publications

Control of oxygen vacancies in ZnO nanorods by annealing and their influence on ZnO/PEDOT:PSS diode behaviour

Control of oxygen vacancies in ZnO nanorods by annealing and their influence on ZnO/PEDOT:PSS diode behaviour

Indium-doped ZnO horizontal nanorods for high on-current field effect transistors

Metal Catalyst for Low-Temperature Growth of Controlled Zinc Oxide Nanowires on Arbitrary Substrates

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