Unexpected surface implanted layer in static random access memory devices observed by microwave impedance microscope

Kundhikanjana, Worasom; Yang, Yanhong; Tanga, Q.; Zhang, K.; Lai, Keji; Ma, Yue; Kelly, Michael A.; Li, X. X.; Shen, Z.‐X.

doi:10.1088/0268-1242/28/2/025010

Cited by 20 publications

(23 citation statements)

References 11 publications

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“…MIM has been applied successfully to measure conductivity inhomogeneity in a wide variety of systems, including carbon nano-tubes [3], graphene [4], In 2 Se 3 nanoribbons [5], quantum hall edge states [6], MoS 2 field effect transistors [7], and more [8][9][10][11][12][13][14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Optically coupled methods for microwave impedance microscopy

Johnston

Yue

Shen

2018

Review of Scientific Instruments

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Scanning Microwave Impedance Microscopy (MIM) measurement of photoconductivity with 50 nm resolution is demonstrated using a modulated optical source. The use of a modulated source allows for the measurement of photoconductivity in a single scan without a reference region on the sample, as well as removing most topographical artifacts and enhancing signal to noise as compared with unmodulated measurement. A broadband light source with a tunable monochrometer is then used to measure energy resolved photoconductivity with the same methodology. Finally, a pulsed optical source is used to measure local photo-carrier lifetimes via MIM, using the same 50 nm resolution tip.

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Section: Introductionmentioning

confidence: 99%

Optically coupled methods for microwave impedance microscopy

Johnston

Yue

Shen

2018

Review of Scientific Instruments

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“…Thus, the MIM‐Im signal is proportional to the area of Te‐SP. On the other hand, the MIM‐Im signal is also a monotonic function of the sample conductivity, which is used to reflect the doping concentrations in semiconductors . Owing to the macro‐segregation and the impurity gettering effects, impurities tend to aggregate in the largest Te‐SP particles, which are the last to freeze.…”

Section: Resultsmentioning

confidence: 99%

“…However, the effects of Te‐SP particles and extended on electronic inhomogeneity were not resolved. Near‐field scanning microwave impedance microscope (MIM) is a noncontact and nondestructive technique for characterizing both topographical and local electronic properties, which has demonstrated great potential for the application in two‐dimensional and nano‐materials, biology and IC chips , etc. The microwave electronics detect the real and imaginary components of the effective tip‐sample impedance and output as MIM‐Re and MIM‐Im signals, which contain the local dielectric and conductivity ( ϵ , σ ) information of the material .…”

Section: Introductionmentioning

confidence: 99%

Resolving electronic inhomogeneity in CdZnTe bulk crystal via scanning microwave impedance microscopy

Jia

et al. 2016

Phys. Status Solidi B

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Local electronic imaging using a scanning microwave impedance microscope (MIM) is performed on as‐grown CdZnTe bulk crystals at room temperature. Well‐defined Te‐rich secondary phase (SP) particles embedded in CdZnTe crystals are clearly observed in the MIM images. The high contrast observed via MIM is attributed to the discrepance between the dielectric response and conductivity of Te‐SP particles and the CdZnTe matrix. A homogeneous phase structure is found within Te‐SP particles according to the uniform MIM signal, which is further confirmed as the rhombohedral structure. The size effect of Te‐SP on the response microwave intensity is discussed. It is demonstrated that the MIM signal is essentially independent of the domain sizes for Te‐SP smaller than 10 µm. In contrast, for Te‐SP larger than 10 µm, a roughly linear size dependence of the signal amplitude appears. In addition, the local area surrounding Te‐SP is examined. A thin transition layer is observed surrounding the inclusion and is ascribed to Zn micro‐segregation. For some Te‐SP particles, a wide dark region surrounds the particle and is attributed to a high concentration of extended defects. For this Te‐SP induced higher defect region, the microwave response is lower owing to the high electron relaxation polarization. Schematic diagram depicting the scanning microwave impedance microscope (MIM) configuration.

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“…In Ref. 67, the authors demonstrated the MIM experiments on a static random-access memory (SRAM) sample to resolve the local conductivity distribution. They showed the microwave imaging on the staircase and SRAM samples in the linear impedance.…”

Section: Quantitative Measurements Of Nanoscale Permittivity and Condmentioning

confidence: 99%

Developments and Recent Progresses in Microwave Impedance Microscope

et al. 2020

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Microwave impedance microscope (MIM) is a near-field microwave technology which has low emission energy and can detect samples without any damages. It has numerous advantages, which can appreciably suppress the common-mode signal as the sensing probe separates from the excitation electrode, and it is an effective device to represent electrical properties with high spatial resolution. This article reviews the major theories of MIM in detail which involve basic principles and instrument configuration. Besides, this paper summarizes the improvement of MIM properties, and its cutting-edge applications in quantitative measurements of nanoscale permittivity and conductivity, capacitance variation, and electronic inhomogeneity. The relevant implementations in recent literature and prospects of MIM based on the current requirements are discussed. Limitations and advantages of MIM are also highlighted and surveyed to raise awareness for more research into the existing near-field microwave microscopy. This review on the ongoing progress and future perspectives of MIM technology aims to provide a reference for the electronic and microwave measurement community.

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Unexpected surface implanted layer in static random access memory devices observed by microwave impedance microscope

Cited by 20 publications

References 11 publications

Optically coupled methods for microwave impedance microscopy

Optically coupled methods for microwave impedance microscopy

Resolving electronic inhomogeneity in CdZnTe bulk crystal via scanning microwave impedance microscopy

Developments and Recent Progresses in Microwave Impedance Microscope

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