Understanding large plastic deformation of SiC nanowires at room temperature

Wang, J.; Lu, Chunsheng; Wang, Q.; Xiao, Pan; Fang, Ke; Bai, Yilong; Shen, Y.G.; Liao, Xiaozhou; Gao, Huajian

doi:10.1209/0295-5075/95/63003

Cited by 11 publications

(8 citation statements)

References 31 publications

(33 reference statements)

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“…Similar phenomenon is also observed in binary compound semiconductor (ZB SiC) nano-wires [12][13][14]37]. During tension, a GaAs NR deforms uniformly along its axis.…”

Section: Discussionsupporting

confidence: 70%

“…This well explains the brittleness of GaAs at the macro-scale [19,21]. Since tensile brittleness and compressive ductility are also confirmed in ZB SiC NRs [12][13][14]37], it is expected that there is a similar size-dependent brittle-to-ductile transition.…”

Section: Discussionsupporting

confidence: 54%

“…The giant piezoelectric size effect and size-dependent Young's modulus are identified in ZnO nano-wires [8][9][10][11]. Moreover, the large plastic deformation can be induced in SiC nano-wires at room temperature [12][13][14]. Recently, the nano-size effect on mechanical properties of semiconductors has been a hot topic in nanotechnology and nanoscience [15][16][17].…”

Section: Introductionmentioning

confidence: 99%

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Size-dependent brittle-to-ductile transition in GaAs nano-rods

Wang

Shen

Song

et al. 2015

Engineering Fracture Mechanics

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a b s t r a c tGaAs is brittle at room temperature at the macro-scale; however, ductility emerges when its characteristic dimension reduces to the nano-scale. Using molecular dynamics simulations, we reveal that there is a brittle-to-ductile transition in GaAs nano-rods due to the competition between generation of cracks and initiation of dislocations. Such a competition is sensitive to aspect ratios of nano-rods. These results well explain experimentally observed ductility of GaAs nano-rods and have important implications for the design of semiconductor materials with tailored mechanical properties.

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“…Similar phenomenon is also observed in binary compound semiconductor (ZB SiC) nano-wires [12][13][14]37]. During tension, a GaAs NR deforms uniformly along its axis.…”

Section: Discussionsupporting

confidence: 70%

Section: Discussionsupporting

confidence: 54%

Section: Introductionmentioning

confidence: 99%

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Size-dependent brittle-to-ductile transition in GaAs nano-rods

Wang

Shen

Song

et al. 2015

Engineering Fracture Mechanics

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“…Since relatively smooth fracture surfaces can be realized in structures with ultrathin lateral dimensions, it seems that self-healing may be an intrinsic property of one-dimensional nanomaterials [11][12][13][14][15]. However, self-healing has rarely been observed in GaAs NWs with lateral dimensions more than 12 nm.…”

Section: Introductionmentioning

confidence: 99%

Self-Healing of Fractured GaAs Nanowires

et al. 2011

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Molecular dynamics simulations are performed to investigate a spontaneous self-healing process in fractured GaAs nanowires with a zinc blende structure. The results show that such self-healing can indeed occur via rebonding of Ga and As atoms across the fracture surfaces, but it can be strongly influenced by several factors, including wire size, number of healing cycles, temperature, fracture morphology, oriented attachment and atomic diffusion. For example, it is found that the self-healing capacity is reduced by 46% as the lateral dimension of the wire increases from 2.3 to 9.2 nm, and by 64% after 24 repeated cycles of fracture and healing. Other factors influencing the self-healing behavior are also discussed.

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“…For example, both electrostatic and London dispersion interactions in boron nitride were reported to be strongly dependent on the interlay spacing and stacking order, while SFs in SiC cause a large dispersion of strength and Young's modulus [5,6]. Particularly, recent deformation experiments by in situ transmission electron microscopy have confirmed that semiconductor GaAs nanowires and Mg alloys can be strengthened by nanoscale SFs [7,8].…”

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confidence: 99%

Materials can be strengthened by nanoscale stacking faults

Wang¹,

Shen²,

Song³

et al. 2015

EPL

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-In contrast to the strength of single crystals, stacking faults (SFs) are usually an unfavorable factor that weakens materials. Using molecular-dynamics simulations, we find that parallel-spaced SFs can dramatically enhance the strength of zinc-blende SiC nanorods, which is even beyond that of their single-crystal counterparts. Strengthening is achieved by restricting dislocation activities between nanoscale neighboring SFs and its overall upward trend is dominated by the volume fraction of SFs. The similar strengthening mechanism is also found in face-centeredcubic metals and their alloys. It is more promising than the traditional methods of decreasing nanoscale grains or twins due to the inverse Hall-Petch effect. This study sheds light on the structural design of nanomaterials with high strength.

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Understanding large plastic deformation of SiC nanowires at room temperature

Cited by 11 publications

References 31 publications

Size-dependent brittle-to-ductile transition in GaAs nano-rods

Size-dependent brittle-to-ductile transition in GaAs nano-rods

Self-Healing of Fractured GaAs Nanowires

Materials can be strengthened by nanoscale stacking faults

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