MRS Proc. 2000 DOI: 10.1557/proc-610-b4.8 View full text
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Srinvasan Chakravarthi, Alp H. Gencer, Scott T. Dunham, Daniel F. Downey

Abstract: SummaryIn summary, we find it is possible to model the extent of diffusion during spike anneals with varying ramp rates by considering the full thermal cycle. These models allow the optimization of RTP ammealing cycles considering the trade-offs between junction depth and sheet resistance. For example, with 1050°C spike anneals, the active dose (and thus sheet conductivity) varies approximately linearly with junction depth. However, faster ramp rates allow the use of higher spike temperatures, with associated …

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