We have studied AlGaAs grown by molecular beam epitaxy (MBE) before and after post-growth hydrogen plasma treatment by means of temperaturedependent photoluminescence (PL), capacitance-voltage (cN), and electron-beaminduced current (EBIC) analysis. The excitonic and extrinsic luminescence features V I ,,-,ypc n,uan5 >a,,,p,c-D"",ec,eu LY a "yU1uyrll p'"""'" I r Y r a , L l l r neutralization effect of vacancies and shallow acceptors. The hydrogen incorporation provides an increase of t h e non-radiative lifet…
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