Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors

Illarionov, Yu. Yu.; Banshchikov, A. G.; Polyushkin, Dmitry K.; Wachter, Stefan; Knobloch, Theresia; Thesberg, Mischa; Mennel, Lukas; Paur, Matthias; Stöger-Pollach, Michael; Steiger‐Thirsfeld, Andreas; Vexler, M. I.; Waltl, Michael; Sokolov, N. S.; Mueller, Thomas; Grasser, T.

doi:10.1038/s41928-019-0256-8

Cited by 204 publications

(214 citation statements)

References 56 publications

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“…Additionally, the fact that the lateral thermal conductivity of h‐BN is very high (360 W m −1 K −1 ) compared to SiO 2 (0.69–1.4 W m −1 K −1 ), HfO 2 (0.3–2.55 W m −1 K −1 ) and Al 2 O 3 (0.49–2.3 W m −1 K −1 ), is also very attractive from a reliability point of view, as it can slow down the dielectric breakdown process . It is worth noting that h‐BN has a low dielectric constant of 5.06 and a small bandgap of about 6 eV, which from a theoretical point of view might raise concerns regarding excessive gate leakage currents (and consequently low ON/OFF current ratios) in devices requiring sub‐1 nm EOT scaling. However, sub‐1 nm (<3 layers thick) h‐BN stacks have exhibited good ability to block leakage current — the I – V curves collected via CAFM in monolayer (0.33 nm thick) h‐BN show that the voltage needed to raise current above the noise level (also named onset voltage, V ON ) is ≈0.75 V, which is similar to that observed in 0.4 nm Al 2 O 3 .…”

Section: Effect Of the Dielectric Environmentmentioning

confidence: 99%

“…As an alternative to high‐ k oxides and h‐BN, crystalline calcium fluoride (fluorite and CaF 2 ) has recently been suggested as a gate insulator in MoS 2 FETs . This material has a higher bandgap of 12.1 eV and dielectric constant of 8.43, which makes tunnel leakages negligible even for sub‐1 nm EOT.…”

Section: Effect Of the Dielectric Environmentmentioning

confidence: 99%

“…At the same time, the F‐terminated surface of CaF 2 epitaxially grown on Si (111) is inert and contains a very low amount of defects, and can form a quasi van der Waals gap interface with MoS 2 . First prototypes of bare‐channel back‐gated MoS 2 FETs with only 2 nm thick CaF 2 insulators have already shown ON/OFF current ratios up to 10 7 , subthreshold swings down to 90 mV decade −1 , and a hysteresis as small as that of conventional Si/high‐ k FETs (see Figure ).…”

Section: Effect Of the Dielectric Environmentmentioning

confidence: 99%

Section: Effect Of the Dielectric Environmentmentioning

confidence: 99%

“…However, we note that all the literature reports discussed above have studied short channel effects on experimental 2D‐FET technologies that have not been fully optimized. For instance, further development of recently reported devices using 2 nm CaF 2 and even 10 nm HfO 2 might allow further minimization short channel effects for channel lengths in the several nanometer regime.…”

Section: Effect Of the Channel Lengthmentioning

confidence: 99%

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Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects

Illarionov

Yalon

et al. 2019

Adv Funct Materials

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The continuous miniaturization of field effect transistors (FETs) dictated by Moore's law has enabled continuous enhancement of their performance during the last four decades, allowing the fabrication of more powerful electronic products (e.g., computers and phones). However, as the size of FETs currently approaches interatomic distances, a general performance stagnation is expected, and new strategies to continue the performance enhancement trend are being thoroughly investigated. Among them, the use of 2D semiconducting materials as channels in FETs has raised a lot of interest in both academia and industry. However, after 15 years of intense research on 2D materials, there remain important limitations preventing their integration in solid-state microelectronic devices. In this work, the main methods developed to fabricate FETs with 2D semiconducting channels are presented, and their scalability and compatibility with the requirements imposed by the semiconductor industry are discussed. The key factors that determine the performance of FETs with 2D semiconducting channels are carefully analyzed, and some recommendations to engineer them are proposed. This report presents a pathway for the integration of 2D semiconducting materials in FETs, and therefore, it may become a useful guide for materials scientists and engineers working in this field.

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Section: Effect Of the Dielectric Environmentmentioning

confidence: 99%

Section: Effect Of the Dielectric Environmentmentioning

confidence: 99%

Section: Effect Of the Dielectric Environmentmentioning

confidence: 99%

Section: Effect Of the Dielectric Environmentmentioning

confidence: 99%

Section: Effect Of the Channel Lengthmentioning

confidence: 99%

See 3 more Smart Citations

Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects

Illarionov

Yalon

et al. 2019

Adv Funct Materials

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Field‐Effect Transistors Based on 2D Materials

et al. 2023

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Chemical Vapor Deposition Syntheses of Wafer‐Scale 2D Transition Metal Dichalcogenide Films toward Next‐Generation Integrated Circuits Related Applications

Zhou

Wang

et al. 2023

Adv Funct Materials

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Abstract2D semiconducting transition metal dichalcogenides (TMDCs), most with a formula of MX2 (M=Mo, W; X=S, Se, etc.), have emerged as promising channel materials for next‐generation integrated circuits, considering their dangling‐bond‐free surfaces, moderate bandgaps, relatively high carrier mobilities, etc. Wafer‐scale preparation of 2D MX2 films holds fundamental significance for realizing their applications. Chemical vapor deposition (CVD) is recognized as the most promising method for preparing electronic‐grade 2D MX2 films. This review hereby summarizes the recent progress in CVD syntheses of wafer‐scale 2D MX2 films and their applications in logic operations, data storage, and image capturing/processing related fields. The first part focuses on the wafer‐scale syntheses of 2D MX2 films through designing homogeneous metal precursor supply routes (e.g., precoating soluble precursor, feeding gaseous precursor, designing independent multisource supply or face‐to‐face metal precursor supply routes). The second part highlights the epitaxial growth of monolayer MX2 single crystals on single‐crystal Au substrates and well‐designed sapphire substrates. The third part introduces various functional device/circuit related applications of CVD‐derived 2D MX2 wafers. Finally, challenges and prospects are discussed from the viewpoints of the controlled synthesis, reliable characterization, and damage‐free transfer of 2D MX2, as well as the fabrication and integration of high‐performance devices.

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Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors

Cited by 204 publications

References 56 publications

Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects

Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects

Field‐Effect Transistors Based on 2D Materials

Chemical Vapor Deposition Syntheses of Wafer‐Scale 2D Transition Metal Dichalcogenide Films toward Next‐Generation Integrated Circuits Related Applications

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