Ultrasound-stimulated increase in the electron diffusion length in p-Si crystals

Olikh, O. Ya.; Ostrovskii, I. V.

doi:10.1134/1.1494617

Cited by 11 publications

(4 citation statements)

References 15 publications

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“…This problem created the necessity to find alternative ways of annealing DE Si at moderate temperatures without destroying its luminescence properties. Ultrasound treatment (UST) could be used for annealing at lower temperatures <200 • C [25][26][27]. According to the scientific literature, UST has successfully been used so far for metal cluster engineering in ion implanted silicon dioxide [28], defect engineering in Si p-n junctions [29], extension of the spectral sensitivity of the AlGaAs/GaAs solar cells towards short-wave lengths [30], modification of radiation-induced defects in Si [31], etc.…”

Section: Introductionmentioning

confidence: 99%

Open-circuit voltage decay transient in dislocation-engineered Si p–n junction

Davletova¹,

Karazhanov²

2008

J. Phys. D: Appl. Phys.

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This work presents a study of an open-circuit voltage decay transient in dislocation-engineered Si p–n junctions. It is found that upon switching off the illumination the open-circuit voltage decreases with time according to the exponential function, whereas the excess carrier concentration decreases with time according to the double exponential function. This result indicates that the dislocation-engineered Si p–n junctions are sensitive to variations of the band-to-band illumination intensity. It is found that the carrier lifetime and open-circuit voltage can be modulated by ultrasound treatment.

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Section: Introductionmentioning

confidence: 99%

Open-circuit voltage decay transient in dislocation-engineered Si p–n junction

Davletova¹,

Karazhanov²

2008

J. Phys. D: Appl. Phys.

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“…Since it is known that ultrasonic action on crystals when a certain threshold of the power of acoustic vibrations is exceeded is accompanied by an increase in the density of dislocations and the values of the effective diffusion coefficients by one or two orders of magnitude [7][8][9][10][11][12][13][14]. An increase in the effective diffusion coefficients is also observed in metal alloys.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Influence of Ultrasound Action on Diffusion Processes in an Explosion-Welded Bimetal System Cu-Al during Heat Treatment

Слаутин

Pronichev

Кузьмин

2021

DDF

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The influence of ultrasound on the main regularities of the formation and growth of the diffusion zone at the interlayer boundary of an explosion-welded layered composite material of Al-Cu systems is investigated. It is proved that the effect of ultrasound contributes to the reduction of the latent period of the nucleation of intermetallic phases at the interlayer boundary, lowers the temperature of the beginning of the eutectic transformation (by about 10 ° C), but at the same time does not affect the phase composition of the diffusion zone as a result of homogeneous reactions at the boundary of contact of solids. It has been established that the thickness of the diffusion zone, with the duration of the supplied acoustic vibrations, ensures the absence of cracks in the diffusion zone, leading to delamination of the material, increases by 30-40% at a fixed temperature of intense diffusion.

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“…In works [6][7][8] it has been demonstrated that by means of a supersonic wave one can control the transport properties of semiconductors and change their structure due to the processes of impurity atom diffusion, dissolution and the formation of complexes, as well as the formation of impurity atom clusters and intrinsic defects in periodic deformation fields.…”

Section: Introductionmentioning

confidence: 99%

Non-linear model of impurity diffusion in nanoporous materials upon ultrasonic treatment

Peleshchak¹,

Kuzyk²,

Dan’kiv³

2014

Condens. Matter Phys.

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Non-linear theory of diffusion of impurities in porous materials upon ultrasonic treatment is described. It is shown that at a defined value of deformation amplitude, an average concentration of vacancies and temperature as a result of the effect of ultrasound possibly leads to the formation of nanoclusters of vacancies and to their periodic educations in porous materials. It is shown that at a temperature smaller than some critical value, a significant growth of a diffusion coefficient is observed in porous materials.

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Ultrasound-stimulated increase in the electron diffusion length in p-Si crystals

Cited by 11 publications

References 15 publications

Open-circuit voltage decay transient in dislocation-engineered Si p–n junction

Open-circuit voltage decay transient in dislocation-engineered Si p–n junction

Investigation of the Influence of Ultrasound Action on Diffusion Processes in an Explosion-Welded Bimetal System Cu-Al during Heat Treatment

Non-linear model of impurity diffusion in nanoporous materials upon ultrasonic treatment

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