Ultrahigh oxygen evolution reaction activity in Au doped co-based nanosheets

Cai, Chao; Han, Shaobo; Zhang, Xiaotao; Yu, Jingxia; Xi, Xiang; Yang, Jack; Qiao, Liang; Zu, Xiaotao; Chen, Yuanzheng; Li, Sean

doi:10.1039/d1ra09094a

Cited by 65 publications

(20 citation statements)

References 39 publications

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“…Hydrogen is introduced during the growth, leading to the etching of the sapphire substrate and producing oxygen-vacancy defects, which increases the nucleation density. [33,34] To increase the grain size, we controlled the inflow time and flow rate of hydrogen, and we also optimized the growth parameters such as substrate temperature and the distance between source and substrate (Figure S6, Supporting Information) for the continuous monolayer film growth. When further extending the growth time, the second and third layers of MoSe 2 flake with triangular shapes would appear (Figure S7, Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe₂

Wang

Lü

et al. 2022

Small Science

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2D semiconducting transition metal dichalcogenides (TMDs) are considered promising building blocks for emergent electronic and optoelectronic devices. As one of the representatives of 2D semiconductors, monolayer MoSe2 has excellent electrical and optical properties and has attracted a lot of research interest recently. To realize various device applications, large‐scale synthesis of monolayer MoSe2 with high crystal quality is critical, yet remains challenging. Herein, the growth of monolayer MoSe2 at a 4 inch wafer‐scale by chemical vapor deposition is demonstrated. Based on a multisource design and vertical placement of substrates, wafer‐scale continuity and uniformity of layer thickness, e.g., the monolayer, are achieved. This growth technique is also applicable to the wafer‐scale growth of other 2D semiconductors such as WS2 and MoS2.

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Section: Resultsmentioning

confidence: 99%

Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe₂

Wang

Lü

et al. 2022

Small Science

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“…In our calculations, the electronic properties are characterized by using the density functional theory (DFT), which is employed in the Vienna ab initio simulation package (VASP) . The electronic exchange–correlation functional is in the form of the Perdew–Burke–Ernzerhof (PBE) functional. − The cutoff of the plane wave energy and k -mesh density have been carefully tested before calculating the electronic structure. The energy cutoff is set to 550 eV.…”

Section: Computational Detailsmentioning

confidence: 99%

Valley Degeneracy-Enhanced Thermoelectric Performance in In-Based FeOCl-Type Monolayers

Huang

Feng

Wang

et al. 2022

ACS Appl. Energy Mater.

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A strategy to enhance the energy conversion efficiency of thermoelectric (TE) materials is to ensure that their band structure has as many energy valleys with high degeneracy as possible. In this work, this strategy is tested in the systems of In-based FeOCl-type monolayers. The TE performance of the InBrSe monolayer with an FeOCl-type structure is fully studied. Detailed calculations show that a higher valley degeneracy can lead to a larger Seebeck coefficient. An ultra-high power factor (PF) of 56.22 mW m–1 K–2 along the x-axis for the n-type doped InBrSe monolayer is found, which is higher than the maximum PF value of previously reported FeOCl-type materials. Such an excellent PF originates from the high energy valley degeneracy of the conduction band and the high connectivity of electronic conduction channels along the x-axis, which simultaneously enhance the Seebeck coefficient and the electrical conductivity. Meanwhile, the InBrSe monolayer has a short phonon lifetime and strong phonon anharmonicity, resulting in low phonon thermal conductivity. Combining the ultra-high PF and low phonon thermal conductivity, the ZT values of the InBrSe monolayer are 2.34, 3.85, and 5.12 at 300, 500, and 700 K, respectively. When the temperature of the cold end is 300 K and that of the hot end is 700 K, the maximum energy conversion efficiency of the InBrSe monolayer can reach 26.1%, which is comparable to that of the traditional heat engine. This study demonstrates that the InBrSe monolayer is a promising medium-temperature TE material and confirms that increasing valley degeneracy is a valuable way to improve the TE performance of 2D materials.

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“…Co-based materials are widely used for OER due to their high intrinsic activity, processability at the atomic scale, and low-cost [ 24 , 25 ]. Albeit many strategies have been developed to generate Co-based materials, the common methods cannot generate amorphous nanosheets, such as the hydrothermal method, [ 26 ] sol–gel method [ 27 ], chemical vapor method [ 28 ], etc.…”

Section: Introductionmentioning

confidence: 99%

Co-Based Nanosheets with Transitional Metal Doping for Oxygen Evolution Reaction

Xiong

Cai

2022

Nanomaterials

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Activated two-dimension (2D) materials are used in various applications as high-performance catalysts. Breaking the long-range order of the basal plane of 2D materials can highly promote catalytic activity by supplying more active sites. Here we developed a method to synthesize ultrathin MCoOx (M = V, Mn, Fe, Ni, Cu, Zn) amorphous nanosheets (ANSs). These Co-based ANSs show high oxygen evolution reaction (OER) activity in alkaline solution due to the broken long-range order and the presence of abundant low bonded O on the basal plane. The stable Fe1Co1Ox ANSs also show an overpotential of ca. 240 mV of achieving 10 mA/cm2 in OER, better than most reported transition metal-based electrocatalysts.

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Ultrahigh oxygen evolution reaction activity in Au doped co-based nanosheets

Abstract: Manipulating Co oxidation by loading Au atoms can substantially enhance the OER activity of those activated Co ions.

Cited by 65 publications

References 39 publications

Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe₂

Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe₂

Valley Degeneracy-Enhanced Thermoelectric Performance in In-Based FeOCl-Type Monolayers

Co-Based Nanosheets with Transitional Metal Doping for Oxygen Evolution Reaction

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Ultrahigh oxygen evolution reaction activity in Au doped co-based nanosheets

Abstract: Manipulating Co oxidation by loading Au atoms can substantially enhance the OER activity of those activated Co ions.

Cited by 65 publications

References 39 publications

Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe2

Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe2

Valley Degeneracy-Enhanced Thermoelectric Performance in In-Based FeOCl-Type Monolayers

Co-Based Nanosheets with Transitional Metal Doping for Oxygen Evolution Reaction

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Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe₂

Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe₂