Ultrahigh and Broad Spectral Photodetectivity of an Organic–Inorganic Hybrid Phototransistor for Flexible Electronics

Abstract

The creation of new organic-inorganic phototransistors with high and broad spectral photosensitivity is reported. The extended charge transport and photoconductivity between the layers in the bilayer structure results in a notable detectivity of over 10(12) Jones and a linear dynamic range of over 100 dB at a broad spectral bandwidth across the UV-NIR range. Furthermore, the considerably reduced persistent photocurrent effect of In-Ga-Zn-O (IGZO)-based hybrid phototransistors is first demonstrated via an organic-inorganic bilayer approach.

Ultrathin Air-Stable n-Type Organic Phototransistor Array for Conformal Optoelectronics

“…The gate voltage is considered to provide an efficient route for the charge dissociation in the OPT devices 38 . Higher drain voltage effectively draws electrons to weaken the recombination of photogenerated carriers 14,38 . The reproducible photoswitch function in signal amplification and photodetection provides the OPTs potential applications in cost-effective flexible organic optoelectronics.

Figure 4Dynamic photoresponse behavior of the PTCDI-C 13 H 27 thin-film phototransistor.

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Charge-integrating organic heterojunction phototransistors for wide-dynamic-range image sensors

“…Phototransistors using only a BHJ channel have been shown to exhibit broad absorption spectra 34 , but the disordered nature of BHJs makes it difficult to approach mobilities of 1 18,29 and various metal oxides 35 operate as phototransistors, but their photonic performance is limited by low absorption outside the ultraviolet region due to their wide bandgaps. On the other hand, the properties of these devices can be combined by forming a heterojunction between a good absorber that efficiently generates electron-hole pairs and high-mobility semiconductor to rapidly transport the carriers out of the device 19,28,36,37 . Organic BHJs and high-mobility organic heterostructures have been demonstrated for light-emitting transistors 38,39 , but no studies have been carried out on photodetectors such as phototransistors, to the best of our knowledge.…”

“…Monolithic integration of OPDs and TFTs is complicated by differences in geometries, electrodes and active layers, and requires heterogeneous assembly. On the other hand, a phototransistor capable of charge integration 18,26 and a fast response time 17,27,28 can operate at higher efficiencies, have a wider dynamic range, and simplify pixel fabrication. Previous developments in high-detectivity solution-processed phototransistors for image sensing show high EQEs using direct photocurrent sampling 15,19,29 or integration on the order of seconds 18,26 .…”

Narrow‐Band QD‐Enhanced PIN Metal‐Oxide Heterostructure Phototransistor with the Assistance of Printing Processes

“…To date, the IGZO active layer has provided low modulated gate voltage, low subthreshold swing (SS), high on–off ratios and other electric properties for phototransistors . QDs and low‐dimensional materials can produce a high optoelectric conversion efficiency and rate, low dark current, high responsivity and detectivity for the phototransistor as a high‐performance integrated detector . However, key obstacles to their wide range of use in integrated‐photodetection applications must urgently be addressed.…”