Ultrafast recombination in Si-doped InN

Ascazubi, Ricardo; Wilke, Ingrid; Cho, Shinho; Lu, Hai; Schaff, William J.

doi:10.1063/1.2185407

Cited by 47 publications

(41 citation statements)

References 14 publications

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“…These features allowed us to suggest a trap-assisted Auger recombination being the dominant recombination mechanism in InN. The modelling provided a value of trap-assisted Auger recombination coefficient B * = C TAA N T = 8×10 [6]. As for the PL study [5], the Auger contribution was found only in the early stage of PL decay (i.e.…”

mentioning

confidence: 87%

Nonlinear carrier recombination and transport features in highly excited InN layer

Наргелас

Malinauskas

Kadys

et al. 2009

Phys. Status Solidi (c)

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A time‐resolved picosecond four‐wave mixing, or transient grating technique has provided novel features of non‐equilibrium carrier recombination and diffusion in wide excitation and temperature range of InN (n0 = 1.4×1018 cm–3) at interband photoexcitation (hν = 1.17 eV). Monitoring of the spatial and temporal carrier dynamics via light diffraction provided a direct way to control the dynamics of photoexcited carrier density N (i.e. integrated over the sample depth) in 5×1017 – 5×1019 cm–3 range. The determined bipolar carrier diffusion coefficient 2 cm2/s and its temperature dependence were used for numerical fitting of carrier in‐depth temporal profiles in non‐homogeneously photoexcited InN layers. The recombination rate was found strongly nonlinear: it followed the 1/τR ∝ B*(n0+N) law and was nearly independent on temperature in T = 15 – 300 K range. These features allowed us to suggest a trap‐assisted Auger recombination being the dominant recombination mechanism in InN. The modelling provided a value of trap–assisted Auger recombination coefficient B* = CTAANT = 8×10–10 cm3 s–1. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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mentioning

confidence: 87%

Nonlinear carrier recombination and transport features in highly excited InN layer

Наргелас

Malinauskas

Kadys

et al. 2009

Phys. Status Solidi (c)

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“…29,79) So far, a wide range of PL lifetimes or carrier lifetimes of sub-ps to a few ns has been reported. [79][80][81][82][83] The main carrier decay process was attributed to NRR at defects rather than Auger processes in Refs. 80 and 82.…”

Section: Luminescence Intensity and Nonradiative Carrier Recombinatiomentioning

confidence: 99%

“…Thus, NRR accompanied by phonon emission is thought to be the dominant recombination Carrier density (cm ) -3 [Mg] (cm ) process. 81) In spite of the research on NRR centers, there is little information on the elemental NRR processes. Figure 11 shows the LO phonon energy and the difference between the inverse values of the two dielectric constants at the high frequency limit and low-frequency limit.…”

Section: ¹1mentioning

confidence: 99%

Carrier dynamics and related electronic band properties of InN films

Ishitani

2014

Jpn. J. Appl. Phys.

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In the present article, we focus our discussion on the carrier dynamics of the scattering and recombination processes of InN films and the related band-edge energy structure. Various reports on this matter are summarized and some issues are reexamined. The analysis result based on the apparent band-band transition matrix element is consistent with a reported effective heavy hole mass of 0.59 (+0.06) m 0 . An E p value related to the transition matrix element of 10-14 eV is thought to be plausible. The ambiguity of the band-edge structure is evaluated by the uncertainty of electron density. The distortion of the conduction band bottom and the ambiguity of the estimation of the many-body effect are discussed. The enhancement of the anisotropic electron-scattering nature with the decrease in residual electron density reveals that the residual electron source has isotropic potentials: point defects or small complexes. Infrared reflectance spectrum analysis reveals the high electron mobility inside grains in spite of the scattering by edge-type dislocations which cause the anisotropic carrier scattering. The recombination processes at low temperatures are dominated by nonradiative processes related to edge-type dislocations, while the thermally activated nonradiative recombination process is independent of the dislocation density. The activation processes and energies of the recombination related to phonon localization are characterized. InN is a peculiar material that has high carrier mobility and a strong electron-phonon interaction, which possibly induces the high nonradiative carrier recombination rate. The control of phonon localization is thus required.

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“…Amplitude of this transient is linear with the pump fluence indicating that it is a density-dependant process. A similar transient has been observed in differential reflection measurements [3] and ascribed to the band gap renormalisation presuming that the band filling is far from saturation at short delays and high carrier temperature, so it cannot be responsible for the rapid change in the signal. The fast transient is followed by a build-up of the "main" signal.…”

Section: Samples and Experimental Techniquementioning

confidence: 61%

“…Among others, carrier thermalisation rate, lifetime, diffusion coefficient are of great importance for device design and operation. Optical pump-probe techniques like time-resolved differential transmission (DT) and reflection are well-suited for the investigation of carrier dynamics and have been widely applied over past years [1][2][3]. However, the mechanisms determining the carrier lifetime and its dependence on excitation fluence are not well understood and require further analysis.…”

Section: Introductionmentioning

confidence: 99%

Ligth induced bleaching and absorption kinetics in highly excited InN layers

Наргелас

Aleksiejūnas²,

Jarašiūnas³

et al. 2009

Phys. Status Solidi (c)

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We study the carrier recombination in highly excited InN epilayers by means of femtosecond differential transmission technique. The light induced bleaching or absorption is observed by tuning the probe photon energy by 100‐200 meV above or below the bandgap. The induced absorption decays roughly twice faster than the induced bleaching at the absorption edge. We conclude that the induced absorption kinetics show dynamics of the overall excess carrier population, while the bleaching at the absorption edge is related to carrier recombination in the band tails. Lifetime τ of absorption decay is inversely dependent on the total electron density τ=B*·(n0+N) with B*=4×10–10 cm3/s, which agrees well with the results of previous measurements. High B* value cannot be attributed to band‐to‐band recombination and supports the assumption that defect‐assisted Auger is the dominant nonlinear recombination process in InN. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Ultrafast recombination in Si-doped InN

Cited by 47 publications

References 14 publications

Nonlinear carrier recombination and transport features in highly excited InN layer

Nonlinear carrier recombination and transport features in highly excited InN layer

Carrier dynamics and related electronic band properties of InN films

Ligth induced bleaching and absorption kinetics in highly excited InN layers

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