2002
DOI: 10.1109/68.974163
|View full text |Cite
|
Sign up to set email alerts
|

Ultracompact corner-mirrors and T-branches in silicon-on-insulator

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

1
39
0

Year Published

2003
2003
2020
2020

Publication Types

Select...
8
1

Relationship

0
9

Authors

Journals

citations
Cited by 92 publications
(40 citation statements)
references
References 12 publications
1
39
0
Order By: Relevance
“…The real part of the susceptibilityχ (3) describes parametric optical processes such as SPM, XPM, and FWM, while the imaginary part ofχ (3) corresponds to TPA and XAM. Note that in this study we neglect the stimulated Raman scattering effect as it is assumed that the frequencies of the interacting pulses do not satisfy the condition required for an efficient, resonant Raman interaction.…”
Section: B Perturbations Of the Photonic Crystal Waveguidementioning
confidence: 99%
See 1 more Smart Citation
“…The real part of the susceptibilityχ (3) describes parametric optical processes such as SPM, XPM, and FWM, while the imaginary part ofχ (3) corresponds to TPA and XAM. Note that in this study we neglect the stimulated Raman scattering effect as it is assumed that the frequencies of the interacting pulses do not satisfy the condition required for an efficient, resonant Raman interaction.…”
Section: B Perturbations Of the Photonic Crystal Waveguidementioning
confidence: 99%
“…The driving forces behind research in this area are the perceived limitations at high frequency of currently used copper interconnects [1], combined with a rapidly increasing demand to move huge amounts of data within increasingly more confined yet increasingly intricate communication architectures. An approach showing great potential towards developing optical interconnects at chip scale is based on high-index contrast optical waveguides, such as silicon photonic waveguides (SiPhWGs) implemented on the silicon-on-insulator material platform [2,3]. Among key advantages provided by this platform are the increased potential for device integration facilitated by the enhanced confinement of the optical field achievable in high-index contrast photonic structures, as well as the particularly large optical nonlinearity of silicon, which makes it an ideal material for active photonic devices.…”
Section: Introductionmentioning
confidence: 99%
“…• abrupt bends, T-junctions (Espinola et al 2001;Ahmad et al 2002) and Mach-Zehnder structures (Zhao et al 1995). For wavelength selective functionalities, photonic wires with periodic variation of the waveguide-width and/or depth can be employed (Krauss et al 1997;Foresi et al 1997;Lalanne and Hugonin 2003;Jugessur et al 2004).…”
Section: Introductionmentioning
confidence: 99%
“…The light is guided by total internal reflection. The tight confinement allows for compact elements, like sharp bends, corner mirrors [4], and ring resonators [5]. However, the performance is limited by the scattering at sidewall roughness, so these waveguides require very good processing.…”
Section: A General Propertiesmentioning
confidence: 99%