Ultra-sensitive graphene Hall elements

Abstract

Hall elements were fabricated based on high quality chemical vapor deposition grown graphene, and their performance limit was explored. The as-fabricated graphene Hall element exhibits current-related sensitivity of up to 2093 V/AT under 200 μA, and magnetic resolution of around 1 mG/Hz0.5 at 3 kHz. This ultrahigh sensitivity and resolution stem from high carrier mobility, small Dirac point voltage of 3 V, and low carrier density of about 3 × 1011 cm−2 in graphene device. The current sensitivity is found to decrease with increasing current bias at large bias, and this phenomenon is attributed to the drain induced Dirac point shift effect in graphene channel.

Sensitivity enhancement of graphene Hall sensors modified by single-molecule magnets at room temperature

“…Therefore, the whole process of GHEs fabrications and modications is easy and compatible with silicon technology. 23 To investigate the surface topography of SMMs-modied graphene, we conducted an AFM test and the result is shown in Fig. 1c.…”

“…The Hall sensors with high sensitivity can detect magnetic eld with high signal-noise ratio and thus reduce the cost of amplications. 23,32 The absolute sensitivity (S A ) of GHEs is dened as the ratio of Hall voltage and external magnetic eld, 19,24…”

“…19 Benetted from the high mobility, thin body, unique band structure, low noise, thermal stability and exibility of graphene, graphene Hall elements (GHEs) exhibit high sensitivity, resolution, linearity and stability in magnetic detections. [19][20][21][22][23] Moreover, the realization of integrating GHEs with silicon Complementary Metal Oxide Semiconductor (CMOS) integrated circuits (ICs) makes GHEs more promising in practical use. 21,24 In this work, we report the fabrication and characterization of sensitivity enhanced GHEs decorated with TbPc 2 SMMs.…”

Colloquium : Quantum limits to the energy resolution of magnetic field sensors

“…We can then use (aa † + a † a)/2 = a † a + 1/2 = n + 1/2, which for the thermal state of the field at temperature T B has a value 1/2 (Muessel et al, 2014) BEC 2.5 × 10 −4 1.5 × 10 −6 1.5 × 10 −6 9.0 × 10 −17 · 1.9 × 10 −9 · 46 (Ahmadi et al, 2017) NVD 1.8 × 10 −5 1.8 × 10 −5 3.1 × 10 −3 3.5 × 10 −11 · 3.0 × 10 −9 · 47 (Kirtley, 2010) SQUID 6.5 × 10 −7 6.5 × 10 −7 · · 4.2 × 10 −13 · 1.8 × 10 −21 48 (Vasyukov et al, 2013) SQUID 1.6 × 10 −7 1.6 × 10 −7 · · 2.0 × 10 −14 · 1.0 × 10 −22 49 BEC 2.0 × 10 −6 2.0 × 10 −6 · · 4.0 × 10 −12 6.0 × 10 −9 · 50 (Wildermuth et al, 2004(Wildermuth et al, , 2005 BEC 3.0 × 10 −6 3.0 × 10 −6 3.0 × 10 −6 · · 2.2 × 10 −8 · 51 RFNVD 5.0 × 10 −7 5.0 × 10 −7 5.0 × 10 −7 · · 3.8 × 10 −8 · 52 (Vasyukov et al, 2013) SQUID 5.6 × 10 −8 5.6 × 10 −8 · · 2.5 × 10 −15 · 1.0 × 10 −22 53 RFNVD 4.0 × 10 −9 4.0 × 10 −9 · · 5.0 × 10 −17 · · 54 (Vasyukov et al, 2013) SQUID 4.6 × 10 −8 4.6 × 10 −8 · · 1.7 × 10 −15 · 1.0 × 10 −22 55 (Huang et al, 2014) GRA 1.6 × 10 −4 1.6 × 10 −4 · · · 1.0 × 10 −7 · 56 HALL 2.0 × 10 −7 2.0 × 10 −7 · · 4.0 × 10 −14 1.0 × 10 −7 · 57 RFNVD 3.0 × 10 −9 3.0 × 10 −9 · · 2.8 × 10 −17 · · 58 RFNVD 5.0 × 10 −9 5.0 × 10 −9 · · 7.9 × 10 −17 · · 59 (Forstner et al, 2014) WGM 4.0 × 10 −5 4.0 × 10 −5 4.0 × 10 −5 6.5 × 10 −14 · 1.4 × 10 −7 · 60 (Lima et al, 2014) MTJ 7.0 × 10 −6 7.0 × 10 −6 · · · 1.5 × 10 −7 · 61 RFNVD 5.0 × 10 −8 5.0 × 10 −8 5.0 × 10 −8 · · 2.9 × 10 −7 · 62 (Chenaud et al, 2016) HALL 1.0 × 10 −6 1.0 × 10 −6 · · · 3.0 × 10 −7 · 63 (Oral et al, 2002) HALL 1.5 × 10 −6 1.5 × 10 −6 · · · 6.0 × 10 −7 · 64 (Maletinsky et al, 2012) RFNVD 3.0 × 10 −9 3.0 × 10 −9 · · · 6.0 × 10 −6 · 65 (Kirtley, 2010) HALL 1.1 × 10 −7 1.1 × 10 −7 · · 1.2 × 10 −14 · 6.2 × 10 −18 66 (Kirtley, 2010) MFM 1.0 × 10 −8 1.0 × 10 −8 · · 1.0 × 10 −16 · 7.0 × 10 − 20 TABLE II Continuation of Table I.…”

Modeling of graphene Hall effect sensors for microbead detection

“…1 Recently, it has been shown that graphene can be an advantageous alternative to semiconductor materials for the development of high-sensitivity devices, due to its high room temperature carrier mobility, lowcost production and possibility of reducing the vertical distance between active layer and target. [2][3][4][5][6][7] Different device performances are expected, depending on the Hall bar geometrical properties and the graphene fabrication process, 2 e.g. chemical vapor deposition, molecular beam epitaxy on SiC and exfoliation.…”