2014
DOI: 10.1364/ol.39.000335
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Ultra-low-loss CMOS-compatible waveguide crossing arrays based on multimode Bloch waves and imaginary coupling

Abstract: We experimentally demonstrate broadband waveguide crossing arrays showing ultra low loss down to 0.04 dB/crossing (0.9%), matching theory, and crosstalk suppression over 35 dB, in a CMOS-compatible geometry. The principle of operation is the tailored excitation of a low-loss spatial Bloch wave formed by matching the periodicity of the crossing array to the difference in propagation constants of the 1 st -and 3 rd -order TE-like modes of a multimode silicon waveguide. Radiative scattering at the crossing points… Show more

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Cited by 58 publications
(31 citation statements)
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“…In Si, compact, fully-etched waveguide crossings fabricated using photolithography (i.e., without subwavelength features) at best have an insertion loss in the range of 0.04-0.1 dB and a crosstalk of −35 dB in the C-band [31], and using genetic algorithms, an insertion loss better than 0.04 dB can be achieved over a bandwidth of about 45 nm and crosstalk can be improved to − 40 dB [32]. To reduce the insertion loss, the index contrast of the Si waveguides is lowered at the crossing by using the partially-etched level at the expense of a larger crossing size [33], [34]; losses as low as 0.015 dB per crossing have been predicted [34].…”
Section: Waveguide Crossingsmentioning
confidence: 99%
“…In Si, compact, fully-etched waveguide crossings fabricated using photolithography (i.e., without subwavelength features) at best have an insertion loss in the range of 0.04-0.1 dB and a crosstalk of −35 dB in the C-band [31], and using genetic algorithms, an insertion loss better than 0.04 dB can be achieved over a bandwidth of about 45 nm and crosstalk can be improved to − 40 dB [32]. To reduce the insertion loss, the index contrast of the Si waveguides is lowered at the crossing by using the partially-etched level at the expense of a larger crossing size [33], [34]; losses as low as 0.015 dB per crossing have been predicted [34].…”
Section: Waveguide Crossingsmentioning
confidence: 99%
“…Periodic structures, such as photonic crystal microcavities and waveguides [1], fiber-to-chip grating couplers [2,3], and waveguide crossing arrays [4,5], are playing an increasingly important role in the design of integrated photonic circuits. With the prospect that silicon photonics can enable significant advances in a number of applications, including energy efficient processor-to-memory interconnects [6] and optical phased arrays [7], there is a need for efficient techniques for the rigorous design of periodic micro-and nanophotonic structures.…”
mentioning
confidence: 99%
“…Next, we analyze the modal properties and band structures of a silicon linear photonic crystal waveguide, a unidirectional antenna-array-inspired fiber-to-chip grating coupler [3], and a low-loss Bloch-mode waveguide crossing array, where we demonstrate the first direct solution of the recently proposed open-system low-loss Bloch modes [4,5]. These examples illustrate the potential utility of a complex-wavevector band structure solver in device design.…”
mentioning
confidence: 99%
“…To realize high-density interconnections in OEICs, low-loss and low-crosstalk crossing waveguides are required for plasmonic device miniaturization and flexible patterning of the optical interconnections. With reference to photonic integrated circuits, optical crossing waveguides have been proposed that are based on silicon-on-insulator (SOI) photonic wires [11][12][13]. Subsequently, crossing structures using the self-imaging properties of multimode interference (MMI) have also been proposed because they offer low insertion loss and ease of fabrication [11,12].…”
mentioning
confidence: 99%
“…With reference to photonic integrated circuits, optical crossing waveguides have been proposed that are based on silicon-on-insulator (SOI) photonic wires [11][12][13]. Subsequently, crossing structures using the self-imaging properties of multimode interference (MMI) have also been proposed because they offer low insertion loss and ease of fabrication [11,12]. In these MMI crossing structures based on SOI photonic wires, the position of the input and output waveguides were set at the center part on both sides of the MMI structure.…”
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confidence: 99%