Ultra-fast charge carrier dynamics across the spectrum of an optical gain media based on InAs/AlGaInAs/InP quantum dots

Khanonkin, Igor; Mishra, Akhilesh Kumar; Karni, Ouri; Mikhelashvili, V.; Banyoudeh, S.; Schnabel, Florian; Sichkovskyi, Vitalii; Reithmaier, Johann Peter; Eisenstein, G.

doi:10.1063/1.4979556

Cited by 10 publications

(8 citation statements)

References 27 publications

(31 reference statements)

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“…We probe the SOA response for input pulses near the gain peak (1530 nm) and out of the tunneling range, 1480 nm and 1590 nm. Using the refractive index information, the spatial distribution of the charge carriers was translated to a time evolution, which reflects the commonly measured time domain response of the probe transmission [17]. Fast recovery in the QD that spectrally overlap the tunneling region, is clearly seen in Fig.…”

Section: Simulation Pump-probe Model Of the Ti-qd Soamentioning

confidence: 99%

“…We describe here a simulation of the broad band dynamic response of a TI-QD SOA following a perturbation by a short pulse. Using the model described in [16] with modifications based on [17], we calculate the evolution of the inversion at every point along the SOA and across its entire gain spectrum. Additionally, we calculate the carrier dynamics in the IW.…”

Section: Introductionmentioning

confidence: 99%

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Carrier dynamics in a tunneling injection quantum dot semiconductor optical amplifier

et al. 2018

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The process of tunneling injection is known to improve the dynamical characteristics of quantum well and quantum dot lasers; in the latter, it also improves the temperature performance. The advantage of the tunneling injection process stems from the fact that it avoids hot carrier injection, which is a key performance-limiting factor in all semiconductor lasers. The tunneling injection process is not fully understood microscopically and therefore it is difficult to optimize those laser structures. We present here a numerical study of the broad band carrier dynamics in a tunneling injection quantum dot gain medium in the form of an optical amplifier operating at 1.55 µm.Charge carrier tunneling occurs in a hybrid state that joins the quantum dot first excited state and the confined quantum well -injection well states. The hybrid state, which is placed energetically roughly one LO phonon above the ground state and has a spectral extent of about 5 meV , dominates the carrier injection to the ground state. We calculate the dynamical response of the inversion across the entire gain spectrum following a short pulse perturbation at various wavelengths and for two bias currents. At a high bias of 200 mA, the entire spectrum exhibits gain; at 30 mA, the system exhibits a mixed gain -absorption spectrum. The carrier dynamics in the injection well is calculated simultaneously. We discuss the role of the pulse excitation wavelengths relative to the gain spectrum peak and demonstrate that the injection well responds to all perturbation wavelengths, even those which are far from the region where the tunneling injection process dominates. * ikhanonkin@technion.ac.il

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Section: Simulation Pump-probe Model Of the Ti-qd Soamentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Carrier dynamics in a tunneling injection quantum dot semiconductor optical amplifier

et al. 2018

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“…This asymmetry stems from nonlinear absorption of the first Ramsey pulse. Charge carriers ab-sorbed during the incoherent nonlinear interaction relax to the QD ground states on a pico-second time scale and provide additional gain [32]. This problem was overcome by averaging the upper and lower exponential decays of the fringe envelopes.…”

Section: Experimental and Theoretical Resultsmentioning

confidence: 99%

“…The QDs exhibit record uniformity characterized by the photoluminescence linewidth at 10 K which was 17 meV and 26 meV a single QD layer and for the six layer stack, respectively [31]. The emission power of the measured electro-luminescence spectra increases with applied bias but the spectral shape remains unchanged [32]. This ensures that for all bias levels, the excitation pulse interacts with the same QDs and the pulse area changes linearly with bias.…”

Section: Experimental Conditionsmentioning

confidence: 91%

Room Temperature Quantum Coherent Revival in an Ensemble of Artificial Atoms

Khanonkin,

Eyal,

Reithmaier

et al. 2020

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We report a demonstration of the hallmark concept of quantum optics: periodic collapse and revival of quantum coherence (QCR) in a room temperature ensemble of quantum dots (QD). Control over quantum states, inherent to QCR, together with the dynamical QD properties present an opportunity for practical room temperature building blocks of quantum information processing. The amplitude decay of QCR is dictated by the QD homogeneous linewidth, thus, enabling its extraction in a double-pulse Ramsey-type experiment. The more common photon echo technique was also invoked and yielded the same linewidth. Measured electrical bias and temperature dependencies of the transverse relaxation times enable to determine the two main decoherence mechanisms: carrier-carrier and carrier-phonon scatterings.

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“…The linewidth of the six-layer structure is nevertheless very narrow, 30 meV [39], which is also a record. The emission level of electroluminescence spectra increases with bias but the spectral shape remains unchanged [40]. No blue shift due to the plasma effect or a red shift due to self-heating take place.…”

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confidence: 93%

Ramsey fringes in a room-temperature quantum-dot semiconductor optical amplifier

et al. 2018

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The ability to induce, observe and control quantum coherent interactions in room temperature, electrically driven optoelectronic devices is of outmost significance for advancing quantum science and engineering towards practical applications. We demonstrate here a quantum interference phenomena, Ramsey fringes, in an inhomogeneously broadened InAs/InP quantum dot (QD) ensemble in the form of a 1.5 mm long optical amplifier operating at room temperature. Observation of Ramsey fringes in semiconductor QD was previously achieved only at cryogenic temperatures and only in isolated single dot systems. A high-resolution pump probe scheme where both pulses are characterized by cross frequency resolved optical gating (X-FROG) reveals a clear oscillatory behavior both in the amplitude and the instantaneous frequency of the probe pulse with a period that equals one optical cycle at operational wavelength. Using nominal input delays of 600 to 900 f s and scanning the separation around each delay in 1 f s steps, we map the evolution of the material de-coherence and extract a coherence time. Moreover we notice a unique phenomenon, which can not be observed in single dot systems, that the temporal position of the output probe pulse also oscillates with the same periodicity but with a quarter cycle delay relative to the intensity variations. This delay is the time domain manifestation of coupling between the real and imaginary parts of the complex susceptibility.

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Ultra-fast charge carrier dynamics across the spectrum of an optical gain media based on InAs/AlGaInAs/InP quantum dots

Cited by 10 publications

References 27 publications

Carrier dynamics in a tunneling injection quantum dot semiconductor optical amplifier

Carrier dynamics in a tunneling injection quantum dot semiconductor optical amplifier

Room Temperature Quantum Coherent Revival in an Ensemble of Artificial Atoms

Ramsey fringes in a room-temperature quantum-dot semiconductor optical amplifier

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