Ultra-broadband photon harvesting in large-area few-layer MoS<sub>2</sub> nanostripe gratings

Bhatnagar, Mukul; Giòrdano, Magda; Mennucci, Carlo; Chowdhury, Debasree; Mazzanti, Andrea; Valle, Giuseppe Della; Martella, Christian; Tummala, Pinaka Pani; Lamperti, Alessio; Molle, Alessandro; Mongeot, F. Buatier de

doi:10.1039/d0nr06744j

“…Two-dimensional (2D) semiconducting transition metal dichalcogenides (S-TMDs) have attracted significant attention in the last decade due to the thickness dependent electronic band structure that allows for at-will manipulation of optical and opto-electronic properties. 1 – 5 Novel configurations employing monolayers and van der Waals (vdW) heterostructures 6 – 8 have emerged as promising platforms for the development of cutting-edge technology spanning across a broad spectrum that include but is not limited to quantum information processing 9 , 10 spintronics 11 , 12 , nanophotonics 13 – 15 and twistronics. 16 , 17 From the perspective to study lattice dynamics, non-invasive Raman scattering (RS) spectroscopy has emerged as a pivotal tool to uncover the physics of vibrational and electronic properties of 2D S-TMDs.…”

Section: Introductionmentioning

confidence: 99%

Temperature induced modulation of resonant Raman scattering in bilayer 2H-MoS2

Bhatnagar

¹

,

Woźniak

²

,

Kipczak

³

et al. 2022

Sci Rep

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The temperature evolution of the resonant Raman scattering from high-quality bilayer 2H-MoS$$_{2}$$ 2 encapsulated in hexagonal BN flakes is presented. The observed resonant Raman scattering spectrum as initiated by the laser energy of 1.96 eV, close to the A excitonic resonance, shows rich and distinct vibrational features that are otherwise not observed in non-resonant scattering. The appearance of 1st and 2nd order phonon modes is unambiguously observed in a broad range of temperatures from 5 to 320 K. The spectrum includes the Raman-active modes, i.e. E$$_{\text {1g}}^{2}$$ 1g 2 ($$\Gamma$$ Γ ) and A$$_{\text {1g}}$$ 1g ($$\Gamma$$ Γ ) along with their Davydov-split counterparts, i.e. E$$_{\text {1u}}$$ 1u ($$\Gamma$$ Γ ) and B$$_{\text {1u}}$$ 1u ($$\Gamma$$ Γ ). The temperature evolution of the Raman scattering spectrum brings forward key observations, as the integrated intensity profiles of different phonon modes show diverse trends. The Raman-active A$$_{\text {1g}}$$ 1g ($$\Gamma$$ Γ ) mode, which dominates the Raman scattering spectrum at T = 5 K quenches with increasing temperature. Surprisingly, at room temperature the B$$_{\text {1u}}$$ 1u ($$\Gamma$$ Γ ) mode, which is infrared-active in the bilayer, is substantially stronger than its nominally Raman-active A$$_{\text {1g}}$$ 1g ($$\Gamma$$ Γ ) counterpart.

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“…In this respect, a promising strategy is the realization of vertical and lateral Xene heterostructures [24]. Lastly, similar to TMDs [75][76][77][78], Xenes represent ideal materials where to test the fine-tuning control of the optoelectronic properties by applying external strain or controlled morphological modifications. In this scenario, both experimental and theoretical studies may have dramatic implications in the development of new technological platforms for flexible photonics and quantum communication technologies [74].…”

Section: Xenes For Photonicsmentioning

confidence: 99%

The Rise of the Xenes: From the Synthesis to the Integration Processes for Electronics and Photonics

Grazianetti

¹

,

Martella

²

2021

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The recent outcomes related to the Xenes, the two-dimensional (2D) monoelemental graphene-like materials, in three interdisciplinary fields such as electronics, photonics and processing are here reviewed by focusing on peculiar growth and device integration aspects. In contrast with forerunner 2D materials such as graphene and transition metal dichalcogenides, the Xenes pose new and intriguing challenges for their synthesis and exploitation because of their artificial nature and stabilization issues. This effort is however rewarded by a fascinating and versatile scenario where the manipulation of the matter properties at the atomic scale paves the way to potential applications never reported to date. The current state-of-the-art about electronic integration of the Xenes, their optical and photonics properties, and the developed processing methodologies are summarized, whereas future challenges and critical aspects are tentatively outlined.

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“…Approaches, such as physical and chemical exfoliation, chemical synthesis, atomic layer deposition, laser annealing, physical vapor deposition and chemical vapor deposition, have been reported [ 16 , 17 , 18 , 19 ]. Among the proposed methods, chemical and mechanical exfoliation, physical vapor deposition, and chemical vapor deposition schemes are the most used ones [ 18 , 20 ]. Specifically, chemical exfoliation or sonication are versatile methods for the low cost, scalable production of monolayer 2D materials [ 16 , 21 ].…”

Section: Introductionmentioning

confidence: 99%

Ambient Pressure Chemical Vapor Deposition of Flat and Vertically Aligned MoS2 Nanosheets

Tummala

¹

,

Martella

²

,

Molle

³

et al. 2022

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Molybdenum disulfide (MoS2) got tremendous attention due to its atomically thin body, rich physics, and high carrier mobility. The controlled synthesis of large area and high crystalline monolayer MoS2 nanosheets on diverse substrates remains a challenge for potential practical applications. Synthesizing different structured MoS2 nanosheets with horizontal and vertical orientations with respect to the substrate surface would bring a configurational versatility with benefit for numerous applications, including nanoelectronics, optoelectronics, and energy technologies. Among the proposed methods, ambient pressure chemical vapor deposition (AP-CVD) is a promising way for developing large-scale MoS2 nanosheets because of its high flexibility and facile approach. Here, we show an effective way for synthesizing large-scale horizontally and vertically aligned MoS2 on different substrates such as flat SiO2/Si, pre-patterned SiO2 and conductive substrates (TaN) benefit various direct TMDs production. In particular, we show precise control of CVD optimization for yielding high-quality MoS2 layers by changing growth zone configuration and the process steps. We demonstrated that the influence of configuration variability by local changes of the S to MoO3 precursor positions in the growth zones inside the CVD reactor is a key factor that results in differently oriented MoS2 formation. Finally, we show the layer quality and physical properties of as-grown MoS2 by means of different characterizations: Raman spectroscopy, scanning electron microscopy (SEM), photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS). These experimental findings provide a strong pathway for conformally recasting AP-CVD grown MoS2 in many different configurations (i.e., substrate variability) or motifs (i.e., vertical or planar alignment) with potential for flexible electronics, optoelectronics, memories to energy storage devices.

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Ultra-broadband photon harvesting in large-area few-layer MoS₂ nanostripe gratings

Abstract: Flat optics photon harvesting, based on cm-scale MoS2 nanostripe arrays, induces an ultra-broadband enhancement (≈400%) of optical absorption.

Cited by 22 publications

References 60 publications

Temperature induced modulation of resonant Raman scattering in bilayer 2H-MoS2

Temperature induced modulation of resonant Raman scattering in bilayer 2H-MoS2

The Rise of the Xenes: From the Synthesis to the Integration Processes for Electronics and Photonics

Ambient Pressure Chemical Vapor Deposition of Flat and Vertically Aligned MoS2 Nanosheets

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Ultra-broadband photon harvesting in large-area few-layer MoS2 nanostripe gratings

Abstract: Flat optics photon harvesting, based on cm-scale MoS2 nanostripe arrays, induces an ultra-broadband enhancement (≈400%) of optical absorption.

Cited by 22 publications

References 60 publications

Temperature induced modulation of resonant Raman scattering in bilayer 2H-MoS2

Temperature induced modulation of resonant Raman scattering in bilayer 2H-MoS2

The Rise of the Xenes: From the Synthesis to the Integration Processes for Electronics and Photonics

Ambient Pressure Chemical Vapor Deposition of Flat and Vertically Aligned MoS2 Nanosheets

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Product

Resources

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Ultra-broadband photon harvesting in large-area few-layer MoS₂ nanostripe gratings