2016
DOI: 10.1038/ncomms12725
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Abstract: Concepts of non-volatile memory to replace conventional flash memory have suffered from low material reliability and high off-state current, and the use of a thick, rigid blocking oxide layer in flash memory further restricts vertical scale-up. Here, we report a two-terminal floating gate memory, tunnelling random access memory fabricated by a monolayer MoS2/h-BN/monolayer graphene vertical stack. Our device uses a two-terminal electrode for current flow in the MoS2 channel and simultaneously for charging and … Show more

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Cited by 272 publications
(171 citation statements)
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References 40 publications
(43 reference statements)
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“…In addition, a new type of the memory device was fabricated with graphene (G) as the FET channel, hBN (B) as the tunnel barrier, and MoS 2 (M) as the charge trapping layer (denoted as GBM) [253,254]. This result confirmed that the MoS 2 layer could act as an effective charge-trapping layer.…”
Section: Memory Devicesmentioning
confidence: 66%
“…In addition, a new type of the memory device was fabricated with graphene (G) as the FET channel, hBN (B) as the tunnel barrier, and MoS 2 (M) as the charge trapping layer (denoted as GBM) [253,254]. This result confirmed that the MoS 2 layer could act as an effective charge-trapping layer.…”
Section: Memory Devicesmentioning
confidence: 66%
“…Due to the novel properties of 2D materials, new two‐terminal devices that are free from traditional limitations can be fabricated. In 2016, Vu reported a stable two‐terminal tunneling random access memory (TRAM) . The schematic of TRAM is shown in Figure A and the channel is composed of MoS 2 with h‐ BN as the blocking layer and Gr as a floating gate.…”
Section: Charge‐transport Memories Based On Two‐dimensional Materialsmentioning
confidence: 99%
“…E, Illustration of memory operation. Reproduced with permission . Copyright 2016, Nature Publishing Group…”
Section: Charge‐transport Memories Based On Two‐dimensional Materialsmentioning
confidence: 99%
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