Two-dimensional weak anti-localization in Bi2Te3 thin film grown on Si(111)-(7 × 7) surface by molecular beam epitaxy

Roy, Anupam; Guchhait, Samaresh; Sonde, Sushant; Dey, Rik; Pramanik, Tanmoy; Rai, Amritesh; Movva, Hema C. P.; Colombo, Luigi; Banerjee, S.

doi:10.1063/1.4803018

Cited by 82 publications

(101 citation statements)

References 47 publications

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“…Ordinarily for disordered thin metals and other known TI surfaces 44,45 , the magnetic field range of interest for WAL or WL is 0.1 -1 T. Theoretically, this range can be estimated by the characteristic field B φ = (h/e)/8πl 2 φ without magnetic impurity scattering. Since even a small amount of magnetic impurities can lower the phase coherence length by orders of magnitude 46,47 , the characteristic field can be much larger than 1 T. In future studies, a wider range of magnetic field may need to be considered for WAL and WL.…”

Section: Nagoaka Formulationmentioning

confidence: 99%

Magnetotransport measurements of the surface states of samarium hexaboride using Corbino structures

Wolgast

Öztürk

et al. 2015

Phys. Rev. B

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The recent conjecture of a topologically-protected surface state in SmB 6 and the verification of robust surface conduction below 4 K have prompted a large effort to understand the surface states.Conventional Hall transport measurements allow current to flow on all surfaces of a topological insulator, so such measurements are influenced by contributions from multiple surfaces of varying transport character. Instead, we study magnetotransport of SmB 6 using a Corbino geometry, which can directly measure the conductivity of a single, independent surface. Both (011) and (001) crystal surfaces show a strong negative magnetoresistance at all magnetic field angles measured.The (011) surface has a carrier mobility of 122 cm 2 /V·sec with a carrier density of 2.5×10 13 cm −2 , which are significantly smaller than indicated by Hall transport studies. This mobility value can explain a failure so far to observe Shubnikov-de Haas oscillations. Analysis of the angle-dependence of conductivity on the (011) surface suggests a combination of a field-dependent enhancement of the carrier density and a suppression of Kondo scattering from native oxide layer magnetic moments as the likely origin of the negative magnetoresistance. Our results also reveal a hysteretic behavior whose magnitude depends on the magnetic field sweep rate and temperature. Although this feature becomes smaller when the field sweep is slower, does not disappear or saturate during our slowest sweep-rate measurements, which is much slower than a typical magnetotransport trace.These observations cannot be explained by quantum interference corrections such as weak antilocalization, but are more likely due to an extrinsic magnetic effect such as the magnetocaloric effect or glassy ordering.

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Section: Nagoaka Formulationmentioning

confidence: 99%

Magnetotransport measurements of the surface states of samarium hexaboride using Corbino structures

Wolgast

Öztürk

et al. 2015

Phys. Rev. B

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“…We here make a final remark on the measured pre-factor α. In most published results, [28][29][30] the pre-factor α = 0.5 instead of 1, which indicates one single channel despite two surfaces (top and bottom) existed in their samples. In order to observe two independent channels (α = 1), one must be able to decouple the contributions from the top and bottom surfaces.…”

Section: Electric Measurementmentioning

confidence: 99%

A study on the epitaxial Bi2Se3 thin film grown by vapor phase epitaxy

et al. 2016

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We report the growth of high quality Bi2Se3 thin films on Al2O3 substrates by using chemical vapor deposition. From the atomic force microscope, x-ray diffraction and transmission electron microscope measurements we found that the films are of good crystalline quality, have two distinct domains and can be grown epitaxially on the Al2O3 substrate. Carrier concentration in the sample is found to be 1.1 × 1019 cm−3 between T = 2 K to T = 300 K, and electron mobility can reach 954 cm2/V s at T = 2 K. Weak anti-localization effect is observed in the low temperature magneto-transport measurement for the sample which indicates that the thin film has topological surface state.

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“…The UHV conditions of this system ensure that films are free from ex situ contamination. [18,23,24].…”

Section: Film Growth and Characterizationmentioning

confidence: 99%

In situspectroscopy of intrinsicBi2Te3topological insulator thin films and impact of extrinsic defects

et al. 2015

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In situ spectroscopy of intrinsic Bi2Te3 topological insulator thin films and impact of extrinsic defects Ngabonziza, P.; Heimbuch, R.; de Jong, N.; Klaassen, R.A.; Stehno, M.P.; Snelder, M.; Solmaz, A.; Ramankutty, S.V.; Frantzeskakis, E.; van Heumen, E.; Koster, G.; Golden, M.S.; Zandvliet, H.J.W.; Brinkman, A. Published in:Physical Review B DOI:10.1103/PhysRevB.92.035405 Link to publicationCitation for published version (APA): Ngabonziza, P., Heimbuch, R., de Jong, N., Klaassen, R. A., Stehno, M. P., Snelder, M., ... Brinkman, A. (2015). In situ spectroscopy of intrinsic Bi2Te3 topological insulator thin films and impact of extrinsic defects. Physical Review B, 92(3), [035405]. https://doi.org/10.1103/PhysRevB.92.035405 General rightsIt is not permitted to download or to forward/distribute the text or part of it without the consent of the author(s) and/or copyright holder(s), other than for strictly personal, individual use, unless the work is under an open content license (like Creative Commons). Disclaimer/Complaints regulationsIf you believe that digital publication of certain material infringes any of your rights or (privacy) interests, please let the Library know, stating your reasons. In case of a legitimate complaint, the Library will make the material inaccessible and/or remove it from the website. Please Ask the Library: http://uba.uva.nl/en/contact, or a letter to: Library of the University of Amsterdam, Secretariat, Singel 425, 1012 WP Amsterdam, The Netherlands. You will be contacted as soon as possible. Combined in situ x-ray photoemission spectroscopy, scanning tunneling spectroscopy, and angle resolved photoemission spectroscopy of molecular beam epitaxy grown Bi 2 Te 3 on lattice mismatched substrates reveal high quality stoichiometric thin films with topological surface states without a contribution from the bulk bands at the Fermi energy. The absence of bulk states at the Fermi energy is achieved without counterdoping. We observe that the surface morphology and electronic band structure of Bi 2 Te 3 are not affected by in vacuo storage and exposure to oxygen, whereas major changes are observed when exposed to ambient conditions. These films help define a pathway towards intrinsic topological devices.

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Two-dimensional weak anti-localization in Bi2Te3 thin film grown on Si(111)-(7 × 7) surface by molecular beam epitaxy

Cited by 82 publications

References 47 publications

Magnetotransport measurements of the surface states of samarium hexaboride using Corbino structures

Magnetotransport measurements of the surface states of samarium hexaboride using Corbino structures

A study on the epitaxial Bi2Se3 thin film grown by vapor phase epitaxy

In situspectroscopy of intrinsicBi2Te3topological insulator thin films and impact of extrinsic defects

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