Two-dimensional (2D) transition-metal chalcogenides have been widely regarded due to their diverse properties and promising prospects in nanodevices and energy applications. In this paper, 2D group 11 chalcogenides (monolayer Au 6 X 2 , X = S, Se, or Te) with strain-induced indirect-to-direct band gap transitions and visible-light-driven overall water-splitting photocatalysts are predicted based on first-principles calculations. Au 6 X 2 monolayers are semiconductors with band gaps ranging from 1.22 to 1.63 eV. Interestingly, strain-induced indirect-to-direct band gap transitions can be achieved in Au 6 X 2 monolayers via enhancing in-plane interactions manipulated by reducing the height between chalcogens and the Au 6 layer. Moreover, Au 6 Se 2 , SAu 6 Se, and SAu 6 Te have appropriate band edge levels and excellent optical absorptions, which are suitable for visible-light-driven overall water splitting. Notably, SAu 6 Te with a significant Janus-induced potential difference, which promotes the separation of photogenerated carriers and thus improves the efficiency of water splitting, still satisfies the conditions for visible-light-driven overall water splitting under −4∼4% uniaxial and biaxial strains. Our findings suggest that Au 6 X 2 monolayers are potential materials for photoelectronic devices and photocatalytic applications.