Two dimensional hexagonal GaOOH: A promising ultrawide bandgap semiconductor for smart optoelectronic applications

Upadhyay, Deepak; Joshi, Nikunj; Jha, Prafulla K.

doi:10.1016/j.cplett.2020.138310

Cited by 4 publications

(7 citation statements)

References 45 publications

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“…GaOOH is a wide band gap semiconductor (Eg = 4.4 eV) and promising material for UV transparent conductors and solar-blind photodetectors, due to its optical transparency in the visible and near UV region [ 78 ]. Coupled with a narrow band semiconductor (e.g., ZnS), GaOOH forms heterojunction structures with photocatalytic activity in organic pollutant removal from wastewater.…”

Section: Zinc Sulfide-based Heterostructures Photocatalysts For Organ...mentioning

confidence: 99%

Recent Developments in ZnS-Based Nanostructures Photocatalysts for Wastewater Treatment

Isac

Eneşca

2022

IJMS

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The continuous growth of the world population has led to the constant increase of environmental pollution, with serious consequences for human health. Toxic, non-biodegradable, and recalcitrant organic pollutants (e.g., dyes, pharmaceuticals, pesticides) are discharged into water resources from various industries, such as textiles, leather, pharmaceuticals, plastics, etc. Consequently, the treatment of industrial wastewater, via a sustainable technology, represents a great challenge for worldwide research. Photocatalytic technology, an innovative technique based on advanced oxidation process (AOP), is considered a green technology with promising prospects in the remediation of global environmental issues. In photocatalysis, a very important role is attributed to the photocatalyst, usually a semiconductor material with high solar light absorption capacity and conductivity for photogenerated-charge carriers. Zinc sulfide (ZnS), as n-type semiconductor with different morphologies and band gap energies (Eg = 3.2–3.71 eV), is recognized as a promising photocatalyst for the removal of organic pollutants from wastewater, especially under UV light irradiation. This review deals with the recent developments (the last five years) in ZnS nanostructures (0D, 1D, 3D) and ZnS-based heterojunctions (n-n, n-p, Z scheme) used as photocatalysts for organic pollutants’ degradation under simulated (UV, Vis) and sunlight irradiation in wastewater treatment. The effects of different synthesis parameters (precursors’ type and concentration, capping agents’ dosages, reaction time and temperature, metal doping, ZnS concentration in heterostructures, etc.) and properties (particle size, morphology, band gap energy, and surface properties) on the photocatalytic performance of ZnS-based photocatalysts for various organic pollutants’ degradation are extensively discussed.

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Section: Zinc Sulfide-based Heterostructures Photocatalysts For Organ...mentioning

confidence: 99%

Recent Developments in ZnS-Based Nanostructures Photocatalysts for Wastewater Treatment

Isac

Eneşca

2022

IJMS

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“…Zhang et al 19 have proposed an improved photoelectrochemical (PEC) device with low manufacturing cost and fast response speed, which overcomes the difficulty of traditional PEC ultraviolet detectors in detecting signals below 300 nm. The use of gallium oxide hydroxide (GaOOH) has also surged in recent decades due to its prominent catalytic properties, 20 and it is also an important precursor for the hydrothermal preparation of Ga 2 O 3 . It is noteworthy to mention that GaOOH is also an ultra-wide band gap semiconductor with a band gap of 4.4–5.27 eV, 21 which is even wider than that of Ga 2 O 3 (4.2–4.9 eV).…”

Section: Introductionmentioning

confidence: 99%

“…In addition, GaOOH has higher thermal stability and relatively lower refractive index compared to Ga 2 O 3 . 20 Therefore, GaOOH has great application potential in solar-blind UV detection. However, due to the large surface density defects of GaOOH, its application in solar-blind UV detection is limited.…”

Section: Introductionmentioning

confidence: 99%

Study on the evolution from α-GaOOH to α-Ga₂O₃ and solar-blind detection behavior of an α-GaOOH/α-Ga₂O₃ heterojunction

et al. 2022

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“…Wide band gap semiconductor nanoparticles, with energy band gaps ( E g ), enhance the performance of nanoscale devices in a wide range of applications ranging from deep-UV optoelectronics, quantum computing, biosensing, high-power electronics, to the use of nanoparticles in extreme environment applications. Engineering atoms to form nanoscale alloys is one of the main routes for achieving E g modulation in nanoparticles. , For instance, several nanoalloys such as ZnO, ZnGa 2 O 4 , Ga 2 O 3 /SnO 2 , CuO, GaOOH, and many others have been synthesized recently with unique electrical and optical properties. Among these materials the spinel compounds (such as ZnGa 2 O 4 ) possess structural features which are suitable for tuning the optoelectronic properties of the material at nanoscale .…”

mentioning

confidence: 99%

“…Engineering atoms to form nanoscale alloys is one of the main routes for achieving E g modulation in nanoparticles. 5,6 For instance, several nanoalloys such as ZnO, 7 ZnGa 2 O 4 , 8 Ga 2 O 3 /SnO 2 , 9 CuO, 10 GaOOH, 11 and many others 12 have been synthesized recently with unique electrical and optical properties. Among these materials the spinel compounds (such as ZnGa 2 O 4 ) possess structural features which are suitable for tuning the optoelectronic properties of the material at nanoscale.…”

mentioning

confidence: 99%

Doping Independent Work Function and Stable Band Gap of Spinel Ferrites with Tunable Plasmonic and Magnetic Properties

et al. 2021

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Tuning optical or magnetic properties of nanoparticles, by addition of impurities, for specific applications is usually achieved at the cost of band gap and work function reduction. Additionally, conventional strategies to develop nanoparticles with a large band gap also encounter problems of phase separation and poor crystallinity at high alloying degree. Addressing the aforementioned trade-offs, here we report Ni−Zn nanoferrites with energy band gap (E g ) of ≈3.20 eV and a work function of ≈5.88 eV. While changes in the magnetoplasmonic properties of the Ni−Zn ferrite were successfully achieved with the incorporation of bismuth ions at different concentrations, there was no alteration of the band gap and work function in the developed Ni−Zn ferrite. This suggests that with the addition of minute impurities to ferrites, independent of their changes in the band gap and work function, one can tune their magnetic and optical properties, which is desired in a wide range of applications such as nanobiosensing, nanoparticle based catalysis, and renewable energy generation using nanotechnology.

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Two dimensional hexagonal GaOOH: A promising ultrawide bandgap semiconductor for smart optoelectronic applications

Cited by 4 publications

References 45 publications

Recent Developments in ZnS-Based Nanostructures Photocatalysts for Wastewater Treatment

Recent Developments in ZnS-Based Nanostructures Photocatalysts for Wastewater Treatment

Study on the evolution from α-GaOOH to α-Ga₂O₃ and solar-blind detection behavior of an α-GaOOH/α-Ga₂O₃ heterojunction

Doping Independent Work Function and Stable Band Gap of Spinel Ferrites with Tunable Plasmonic and Magnetic Properties

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Two dimensional hexagonal GaOOH: A promising ultrawide bandgap semiconductor for smart optoelectronic applications

Cited by 4 publications

References 45 publications

Recent Developments in ZnS-Based Nanostructures Photocatalysts for Wastewater Treatment

Recent Developments in ZnS-Based Nanostructures Photocatalysts for Wastewater Treatment

Study on the evolution from α-GaOOH to α-Ga2O3 and solar-blind detection behavior of an α-GaOOH/α-Ga2O3 heterojunction

Doping Independent Work Function and Stable Band Gap of Spinel Ferrites with Tunable Plasmonic and Magnetic Properties

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Study on the evolution from α-GaOOH to α-Ga₂O₃ and solar-blind detection behavior of an α-GaOOH/α-Ga₂O₃ heterojunction