1997
DOI: 10.1016/s0921-4534(97)00850-2
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Tunneling in pure and substituted single crystals of Bi2Sr2Ca1Cu2O8+χ: s+d-wave pairing and gap enhancement

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Cited by 5 publications
(5 citation statements)
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“…32 Very few publi-cations seem to have systematically studied the impurity effects in c-axis tunneling. We find one: Hancotte et al 33 showed that Zn substitution (≤ 1%) in the CuO 2 planes of BSCCO (2212) caused G(0) to markedly increase, accompanied by a reduced gap. Here the spectral weight of impurity effects is clearly large enough, yet not even a trace of a ZBCP was observed.…”
Section: Introductionmentioning
confidence: 74%
See 1 more Smart Citation
“…32 Very few publi-cations seem to have systematically studied the impurity effects in c-axis tunneling. We find one: Hancotte et al 33 showed that Zn substitution (≤ 1%) in the CuO 2 planes of BSCCO (2212) caused G(0) to markedly increase, accompanied by a reduced gap. Here the spectral weight of impurity effects is clearly large enough, yet not even a trace of a ZBCP was observed.…”
Section: Introductionmentioning
confidence: 74%
“…Thus we propose that this is how impurities can possibly contribute to some of the observed ZBCP's, and why often ZBCP's are not observed in caxis non-localized tunneling, even in samples which have been deliberately introduced some substantial amount of substitutional non-magnetic zinc (Zn) impurities. 33…”
Section: B the Case Of Randomly Distributed Impuritiesmentioning
confidence: 99%
“…Spontaneous time reversal symmetry breaking has also been predicted to occur around magnetic impurities doped into high-T c superconductors (Balatsky 1998). In fact, a large variation of the gap structure in Ni-doped BSCCO is reported by Hancotte et al (1997). The induced d x 2 +y 2 + is or d x 2 +y 2 + id xy states have no node in k-space, and a finite-amplitude gap opens for all directions.…”
Section: Btrs and Peak Splittingmentioning
confidence: 99%
“…One should also note that in the superconducting state of Bi 2 Sr 2 CaCu 2 O 8+y , tunnel measurements of the nonsymmetrical junctions often show the dip in the bias V dependences of the differential conductivity G diff ns (V ) (about 10% magnitude as compared to the peak height) at about V ≈ −2 /e [463][464][465][466][467][468], whereas for symmetrical junctions the dips (or dip-hump structures) are observed at V ≈ ±3 /e [469][470][471]. The dependences G diff ns (V ) for the junctions involving Bi 2 Sr 2 CaCu 2 O 8+y are shown as typical examples of asymmetrical patterns in figures 8 and 9.…”
Section: High-t C Oxidesmentioning
confidence: 99%