2012
DOI: 10.1021/nl2034656
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Tuning Quantum Corrections and Magnetoresistance in ZnO Nanowires by Ion Implantation

Abstract: Using ion implantation, the electrical as well as the magnetotransport properties of individual ZnO nanowires (NWs) can be tuned. The virgin NWs are configured as field-effect transistors which are in the enhancement mode. Al-implanted NWs reveal a three-dimensional metallic-like behavior, for which the magnetoresistance is well described by a semiempirical model that takes into account the presence of doping induced local magnetic moments and of two conduction bands. On the other hand, one-dimensional electro… Show more

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Cited by 45 publications
(31 citation statements)
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“…1D nanostructures doped with transition metal (such as Cr, Mn, Fe, Co, and Ni), which can find extensive application in spintronics and nanophotonics [3-5], show novel emission and interesting magnetic transport properties. For example, single crystalline Ga 0.95 Mn 0.05 As nanowires show temperature-dependent hopping conduction [6].…”
Section: Introductionmentioning
confidence: 99%
“…1D nanostructures doped with transition metal (such as Cr, Mn, Fe, Co, and Ni), which can find extensive application in spintronics and nanophotonics [3-5], show novel emission and interesting magnetic transport properties. For example, single crystalline Ga 0.95 Mn 0.05 As nanowires show temperature-dependent hopping conduction [6].…”
Section: Introductionmentioning
confidence: 99%
“…The negative parabolic magnetoresistance characteristic is observed at low field. It is related to the weak localization and electron-electron interaction effects, which only occur in the coherent diffusive transport regime30. By rotating the magnetic field away from the perpendicular orientation, the minima in R xx are strongly suppressed.…”
Section: Resultsmentioning
confidence: 99%
“…The mobility degradation arising from the Coulomb scattering and/or neutral crystalline defects deteriorated the value of the on‐state current; and the increased off‐state current mostly arises from the gate‐induced drain leakage . In addition, the channel even exhibited metallic‐like behavior when the implantation dose was high enough . Figure shows the SEM image and the transfer characteristics of ZnO NW FETs.…”
Section: Enhanced Electronic Device Performance By Ion Beammentioning
confidence: 99%
“…The scale bar is 1 µm; V ds is 100 and 20 mV for the virgin and the implanted NWs, respectively. Reproduced with permission . Copyright 2012, American Chemical Society.…”
Section: Enhanced Electronic Device Performance By Ion Beammentioning
confidence: 99%