Tuning carrier lifetime in InGaN/GaN LEDs via strain compensation for high-speed visible light communication

Du, Chunhua; Huang, Xin; Jiang, Chunyan; Pu, Xiong; Zhao, Zhenfu; Liang, Jing; Hu, Weiguo; Wang, Zhong Lin

doi:10.1038/srep37132

Cited by 51 publications

(31 citation statements)

References 53 publications

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“…As was previously discussed, the III-nitride layers overgrown on 2 01oriented Ga2O3 (S1) have been shown to be more strain relaxed than those grown on Al2O3. While this can lead to low rates of radiative recombination processes (longer τrad), 45 the decline in overlap probability can effectively be offset by the higher crystalline quality of the overgrown layer, leading to better optical performance. 46 In conclusion, GaN/AlGaN MQWs were grown on 2 01 -oriented β-Ga2O3 substrate.…”

mentioning

confidence: 99%

GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices

Ajia

Yamashita²,

Lorenz

et al. 2018

Applied Physics Letters

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GaN/AlGaN multiple quantum wells (MQWs) are grown on a 2 01-oriented β-Ga2O3 substrate. The optical and structural characterizations of the MQW structure are compared with a similar structure grown on sapphire. Scanning transmission electron microscopy and atomic force microscopy images show that the MQW structure exhibits higher crystalline quality of welldefined quantum wells, when compared to a similar structure grown on sapphire. X-ray diffraction rocking curve and photoluminescence excitation analyses confirm a lower density of dislocation defects in the sample grown on β-Ga2O3 substrate. Detailed analysis of time-integrated and time

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mentioning

confidence: 99%

GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices

Ajia

Yamashita²,

Lorenz

et al. 2018

Applied Physics Letters

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“…In [140,141], water splitting [142,143], food processing/horticulture [144,145], photo-therapy/medical diagnostics [146], and many more. Especially, 588 "This is an Open Access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium provided the original work is properly cited (CC BY 4.0).…”

Section: Resultsmentioning

confidence: 99%

Full-Color III-Nitride Nanowire Light-Emitting Diodes

Velpula¹,

Jain²,

Bui³

et al. 2019

J. ADV. ENG. COMPUT.

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III-nitride nanowire-based light-emitting diodes (LEDs) have been intensively studied as promising candidates for future lighting technologies. Compared to conventional GaN-based planar LEDs, III-nitride nanowire LEDs exhibit numerous advantages including greatly reduced dislocation densities, polarization fields, and quantum-conned Stark effect due to the effective lateral stress relaxation, promising high-efficiency full-color LEDs. Beside these advantages, however, several issues have been identified as the limiting factors for further enhancing the nanowire LED quantum efficiency and light output power. Some of the most probable causes have been identified as due to the lack of carrier confinement in the active region, non-uniform carrier distribution, electron overflow, and the nonradiative recombination along the nanowire lateral surfaces. Moreover, the presence of large surface states and defects contribute significantly to the carrier loss in nanowire LEDs. Consequently, reported nanowire LEDs show relatively low output power. Recently, III-nitride core-shell nanowire LED structures have been reported as the most efficient nanowire white LEDs with a record-high output power which is more than 500 times stronger than that of nanowire white LEDs without using core-shell structure. In this context, we will review the current status, challenges, and approaches for the high-performance IIInitride nanowire LEDs. More specifically, we will describe the current methods for the fabrication of nanowire structures including top-down and bottom-up approaches, followed by characteristics of III-nitride nanowire LEDs. We will then discuss the carrier dynamics and loss mechanism in nanowire LEDs. The typical designs for the enhanced performance of III-nitride nanowire LEDs will be presented next. The color-tunable nanowire LEDs with emission wavelengths in the visible spectrum and phosphor-free nanowire white LEDs will be finally discussed.This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium provided the original work is properly cited.

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“…Thus, the positive (negative) piezoelectric polarization charges occur at the top (bottom) of InGaN layer, as shown in Figure 11e, inducing an electric field along [0001] direction. [68] The built-in electrostatic field is thus compensated by the piezoelectric field by the external strain. As a result, a tilted energy band profile is formed in Figure 11g, with the electron and hole wave function spatially separated in the conduction band and valence band.…”

Section: Strain-compensation Piezo-phototronic Effect In Qwmentioning

confidence: 99%

Recent Progress on Piezotronic and Piezo‐Phototronic Effects in III‐Group Nitride Devices and Applications

Wang

2017

Adv Eng Mater

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Wurtzite-structured III-group nitrides, like GaN, InN, AlN, and their alloys, present both piezoelectric and semiconducting properties under straining owing to the polarization of ions in a crystal with non-central symmetry. The piezoelectric polarization charges are created at the interface when a strain is applied. As a result, a piezoelectric potential (piezopotential) is produced, which is used as a "gate" to tune/control the charge transport behavior across a metal/semiconductor interface or a p-n junction. This is called as piezotronic effect. A series of piezotronic devices and applications have been developed, such as piezotronic nanogenerators (NGs), piezotronic transistors, piezotronic logic devices, piezotronic electromechanical memories, piezotronic enhanced biochemical, and gas sensors and so on. With the flourished development of piezotronic effect, the piezo-phototronic effect, as the threeway coupling of piezoelectric polarization, semiconductor properties, and optical excitation, utilizes the piezopotential to modulate the energy band profile and control the carrier generation, transportation, separation, and/or recombination for improving performances of optoelectronic devices. This paper intends to provide an overview of the rapid progress in the emerging fields of piezotronics and piezo-phototronics, covering from the fundamental principles to devices and applications. This study will provide important insight into the potential applications of GaN based electronic/optoelectronic devices in sensing, active flexible/stretchable electronics/optoelectronics, energy harvesting, human-machine interfacing, biomedical diagnosis/therapy, and prosthetics. Figure 2. Piezopotential in wurtzite crystal. a) Atomic model of the wurtzite Àstructured ZnO. b) The piezopotential distributed along a ZnO NW under axial strain calculated by numerical methods. The growth direction of the NW is along the c-axis. (Reproduced with permission. [27]

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Tuning carrier lifetime in InGaN/GaN LEDs via strain compensation for high-speed visible light communication

Cited by 51 publications

References 53 publications

GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices

GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices

Full-Color III-Nitride Nanowire Light-Emitting Diodes

Recent Progress on Piezotronic and Piezo‐Phototronic Effects in III‐Group Nitride Devices and Applications

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