Tunable nanometer electrode gaps by MeV ion irradiation

Cheang-Wong, J.C.; Narumi, K.; Schürmann, G.; Aziz, Michael J.; Golovchenko, Jene Andrew

doi:10.1063/1.3702778

Cited by 4 publications

(4 citation statements)

References 19 publications

(20 reference statements)

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“…The main fabrication process of symmetric electrodes includes: direct lithography [7], shadow mask evaporation [8], gap narrowing (by electromigration, electroplating, and electrodepositing) [9], and mechanical breaking [10]. More recently, some improved methods can be found in the literature, such as nanogap formed by electron-field induction [11], high-current annealing [12], and MeV ion-irradiation [13]. Concerning the fabrication of asymmetric electrodes, to our knowledge, only two techniques have been reported [14,15].…”

Section: Introductionmentioning

confidence: 99%

Sub-10-nm nanogap fabrication by silicidation

Tang

Francis

Duţu

et al. 2013

2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)

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We developed a simple and reliable method for the fabrication of sub-10-nm wide nanogaps. The self-formed nanogap is based on the stoichiometric solid-state reaction between metal and Si atoms during silicidation. The nanogap width is determined by the metal layer thickness. Our proposed method provides nanogaps with either symmetric or asymmetric electrodes, as well as multiple nanogaps within one unique process step. Therefore, this method allows for high throughput and large-scale production.X. Tang is with

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Section: Introductionmentioning

confidence: 99%

Sub-10-nm nanogap fabrication by silicidation

Tang

Francis

Duţu

et al. 2013

2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)

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“…7 There are numerous fabrication techniques, for instance, using edge lithography, 8 angled evaporation, 6 or electron beam lithography using PMMA and lift-off. 9 However, none of these methods is applicable to the problem of separating two ohmic contacts, typically 100 lm Â 50 lm in size, by a deep submicron gap.…”

Section: Introductionmentioning

confidence: 99%

Long nanoscale gaps on III–V substrates by electron beam lithography

Thoms

Macintyre

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Deep submicron gaps between metal pads of around 100 μm in size are difficult to fabricate on III-V substrates using electron beam lithography, polymethyl methacrylate (PMMA) resist, and metal lift-off. In device fabrication, gold is commonly used to form metal contacts. However, gold etch methods are not well suited to high resolution patterning and lift-off methods are frequently employed. In this paper, the authors investigate a number of different methods for realizing long 100 nm scale gaps for structures fabricated on III–V substrates. Initially, they explain why the fabrication of long narrow gaps between metal pads using PMMA resist and metal lift-off is difficult. The authors show that 15 nm gaps can be fabricated using a double patterning method and discuss the limitations of this technique. They show that good undercut profiles for metal lift-off can be realized by the controlled etching of a sacrificial polymer layer placed beneath the resist. The authors demonstrate that reliable 100 nm scale gaps can be fabricated between 100 μm square metal pads using these methods.

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“…16], sputtering [17], electroplating [18], and electrodepositing [19], which need additional processes or external circuits; (iv) mechanical breaking [20,21], which is achieved by global bending mechanical force, not promising for manufacturing chips. More recently, some improved methods can be found in the literature, such as nanogaps formed by electron-field induction [22], high-current annealing [23], and MeV ion irradiation [24]. These new methods suffer from low yield, high cost, and incompatibility with current complementary metal-oxide-semiconductor (CMOS) process.…”

mentioning

confidence: 99%

Self-formation of sub-10 nm nanogaps based on silicidation

Tang¹,

Francis²,

Duţu³

et al. 2014

Nanotechnology

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We have developed a simple and reliable method for the fabrication of sub-10 nm wide nanogaps. The self-formed nanogap is based on the stoichiometric solid-state reaction between metal and silicon atoms during the silicidation process. The nanogap width is determined by the metal layer thickness. Our proposed method can produce symmetric and asymmetric electrode nanogaps, as well as multiple nanogaps within one unique process step, for potential application to biological/chemical sensors and nanoelectronics, such as resistive switches, storage devices, and vacuum channel transistors. This method provides high throughput and it is suitable for large-scale production.

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Tunable nanometer electrode gaps by MeV ion irradiation

Cited by 4 publications

References 19 publications

Sub-10-nm nanogap fabrication by silicidation

Sub-10-nm nanogap fabrication by silicidation

Long nanoscale gaps on III–V substrates by electron beam lithography

Self-formation of sub-10 nm nanogaps based on silicidation

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