Tunable Esaki Effect in Catalyst-Free InAs/GaSb Core–Shell Nanowires

Rocci, Mirko; Rossella, Francesco; Gomes, U P; Zannier, Valentina; Rossi, Francesca; Ercolani, Daniele; Sorba, L.; Beltram, Fabio; Roddaro, Stefano

doi:10.1021/acs.nanolett.6b04260

Cited by 31 publications

(39 citation statements)

References 30 publications

(39 reference statements)

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“… 4. References 4.1 Main references Voliani and Piazza [ 37 ], Cassano et al [ 38 ] Tomioka et al [ 39 ], Gomes et al [ 30 ], Rocci et al [ 40 ]. Novoselov et al [ 41 ], Convertino et al [ 36 ], Miseikis et al [ 42 ] 5.…”

Section: Table A1mentioning

confidence: 99%

Workers’ Exposure to Nano-Objects with Different Dimensionalities in R&D Laboratories: Measurement Strategy and Field Studies

Boccuni

Ferrante

Tombolini

et al. 2018

IJMS

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With the increasing interest in the potential benefits of nanotechnologies, concern is still growing that they may present emerging risks for workers. Various strategies have been developed to assess the exposure to nano-objects and their agglomerates and aggregates (NOAA) in the workplace, integrating different aerosol measurement instruments and taking into account multiple parameters that may influence NOAA toxicity. The present study proposes a multi-metric approach for measuring and sampling NOAA in the workplace, applied to three case studies in laboratories each dedicated to materials with different shapes and dimensionalities: graphene, nanowires, and nanoparticles. The study is part of a larger project with the aim of improving risk management tools in nanomaterials research laboratories. The harmonized methodology proposed by the Organization for Economic Cooperation and Development (OECD) has been applied, including information gathering about materials and processes, measurements with easy-to-use and hand-held real-time devices, air sampling with personal samplers, and off-line analysis using scanning electron microscopy. Significant values beyond which an emission can be attributed to the NOAA production process were identified by comparison of the particle number concentration (PNC) time series and the corresponding background levels in the three laboratories. We explored the relations between background PNC and microclimatic parameters. Morphological and elemental analysis of sampled filters was done to identify possible emission sources of NOAA during the production processes: rare particles, spherical, with average diameter similar to the produced NOAA were identified in the nanoparticles laboratory, so further investigation is recommended to confirm the potential for worker exposure. In conclusion, the information obtained should provide a valuable basis for improving risk management strategies in the laboratory at work.

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Section: Table A1mentioning

confidence: 99%

Workers’ Exposure to Nano-Objects with Different Dimensionalities in R&D Laboratories: Measurement Strategy and Field Studies

Boccuni

Ferrante

Tombolini

et al. 2018

IJMS

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show abstract

“…III-V semiconductor nanowires are well established as a suitable platform for different fields of nanoscience and nanotechnology, including thermoelectrics [35,36], signal transduction [37,38], nanoelectronics, optoelectronics, and plasmonics [39,40,41,42]. Recently, nanowire-based sensing applications have gained enormous interest: InAs NWs, both individual and in array configuration, are considered as promising building blocks for the realization of gas sensors due to their easy growth mechanism, to the high value of the electron mobility and to the likely presence of a surface accumulation layer, which makes them particularly sensitive to the surface state dynamics and the environment [30,43,44,45].…”

Section: Introductionmentioning

confidence: 99%

Conductometric Sensing with Individual InAs Nanowires

Demontis

Rocci

Donarelli

et al. 2019

Sensors

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In this work, we isolate individual wurtzite InAs nanowires and fabricate electrical contacts at both ends, exploiting the single nanostructures as building blocks to realize two different architectures of conductometric sensors: (a) the nanowire is drop-casted onto—supported by—a SiO2/Si substrate, and (b) the nanowire is suspended at approximately 250 nm from the substrate. We test the source-drain current upon changes in the concentration of humidity, ethanol, and NO2, using synthetic air as a gas carrier, moving a step forward towards mimicking operational environmental conditions. The supported architecture shows higher response in the mid humidity range (50% relative humidity), with shorter response and recovery times and lower detection limit with respect to the suspended nanowire. These experimental pieces of evidence indicate a minor role of the InAs/SiO2 contact area; hence, there is no need for suspended nanostructures to improve the sensing performance. Moreover, the sensing capability of single InAs nanowires for detection of NO2 and ethanol in the ambient atmosphere is reported and discussed.

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“…On the one hand, the growth of GaSb nanowires on InAs nanowire stems by a self-catalyzed mechanism is difficult due to the change of both anions and cations from the InAs stem to the upper GaSb. On the other hand, because of the low lattice mismatch of 0.6% and the unique type-II-broken band alignment between InAs and GaSb, the growth of GaSb nanowires on InAs stems to form InAs/GaSb axial heterostructure nanowires enables a new platform for many applications, including tunneling-based devices [7, 14, 20, 21], high-speed complementary metal-oxide-semiconductor (CMOS) transistors [22, 23], research on electron-hole hybridization [9], and exciton- and spin-physics studies [24]. …”

Section: Introductionmentioning

confidence: 99%

Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition

Yang

2017

Nanoscale Res Lett

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We report the first self-catalyzed growth of high-quality GaSb nanowires on InAs stems using metal-organic chemical vapor deposition (MOCVD) on Si (111) substrates. To achieve the growth of vertical InAs/GaSb heterostructure nanowires, the two-step flow rates of the trimethylgallium (TMGa) and trimethylantimony (TMSb) are used. We first use relatively low TMGa and TMSb flow rates to preserve the Ga droplets on the thin InAs stems. Then, the flow rates of TMGa and TMSb are increased to enhance the axial growth rate. Because of the slower radial growth rate of GaSb at higher growth temperature, GaSb nanowires grown at 500 °C exhibit larger diameters than those grown at 520 °C. However, with respect to the axial growth, due to the Gibbs-Thomson effect and the reduction in the droplet supersaturation with increasing growth temperature, GaSb nanowires grown at 500 °C are longer than those grown at 520 °C. Detailed transmission electron microscopy (TEM) analyses reveal that the GaSb nanowires have a perfect zinc-blende (ZB) crystal structure. The growth method presented here may be suitable for other antimonide nanowire growth, and the axial InAs/GaSb heterostructure nanowires may have strong potential for use in the fabrication of novel nanowire-based devices and in the study of fundamental quantum physics.Electronic supplementary materialThe online version of this article (doi:10.1186/s11671-017-2207-5) contains supplementary material, which is available to authorized users.

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Tunable Esaki Effect in Catalyst-Free InAs/GaSb Core–Shell Nanowires

Cited by 31 publications

References 30 publications

Workers’ Exposure to Nano-Objects with Different Dimensionalities in R&D Laboratories: Measurement Strategy and Field Studies

Workers’ Exposure to Nano-Objects with Different Dimensionalities in R&D Laboratories: Measurement Strategy and Field Studies

Conductometric Sensing with Individual InAs Nanowires

Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition

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