Active tunability of phonon dispersion and spontaneous emission (SE) still remain open owing to its exciting application potential. In view of the fact that polaritons are very sensitive to the dielectric environment, in this study, with the help of the optical differences of the phase change material vanadium dioxide (VO<sub>2</sub>) during the phase transition from the insulating state to metallic state and the tunable surface plasmon polaritons (SPPs) in graphene, a heterostructure composed of hyperbolic material hexagonal boron nitride (hBN) and graphene and VO<sub>2</sub> is proposed to investigate the active tunability of hBN phonon polaritons (PhPs). In order to illustrate the underlying physical mechanism of the above heterostructures, the dispersion distributions of the above heterostructures are calculated and represented by the imaginary part of the p-polarized Fresnel reflection coefficient of the heterostructure, meanwhile the dispersion relations of the hBN/VO<sub>2</sub> heterostructure in hyperbolic regions are verified by quasi-static approximation method. Results indicate active tunability of hBN PhPs inside type-I and type-II hyperbolic bands can be achieved by controlling VO<sub>2</sub> phase transition in hBN/VO<sub>2</sub> heterostructure. The PhPs dispersion change of the hBN/VO<sub>2</sub> heterostructure is mainly caused by the change of the VO<sub>2</sub> dielectric function when VO<sub>2</sub> substrate transforms from the insulating state to metallic state, which affects the total Fresnel reflection coefficient of the heterostructure and finally results in the PhPs dispersion change of hBN/VO<sub>2</sub> heterostructure. When graphene is introduced into the hBN/VO<sub>2</sub> heterostructure, coupled hyperbolic plasmon-phonon polaritons (HPPPs) are obtained within type-I and type-II hyperbolic bands of hBN, while surface plasmon-phonon polaritons (SPPPs) are generated outside its hyperbolic bands. Moreover, comparative analysis of SE rates is presented for a quantum emitter positioned with the hBN/VO<sub>2</sub> and graphene/hBN/VO<sub>2</sub> heterostructures, revealing SE rates of these heterostructures can be modulated by the passive means including changing the hBN thickness and distance between the dipole emitter and the proposed heterostructure, and the active means including tuning VO<sub>2</sub> phase states and graphene chemical potential without changing structural configurations. This study provides a theoretical guidance to realize active tunability of both phonon dispersion and SE rate of the natural or artificial anisotropic optical materials using functional materials including phase change materials and graphene.