True oxide electron beam induced current for low-voltage imaging of local defects in very thin silicon dioxide films

Abstract

A new low-voltage contrast mechanism due to electron hole pairs generated in the oxide by an electron beam was observed at an electric field lower than 3.5 MV/cm in addition to the tunneling current microscopy (TCM) contrast mechanism at electric fields higher than 3.5 MV/cm. The new contrast mechanism is opposite in sign to the TCM contrast mechanism. Good contrast can be obtained at an electric field as low as 2.4 MV/cm, which is two to three times smaller than that needed for TCM contrast. Potential applications include large area imaging and quantitative imaging of oxide defects.

Trap-Related Carrier Transports in p-Channel Field-Effect Transistor with Polycrystalline Si/HSiON Gate Stack

“…8 and 9 and FN expression [I / V 2 expðÀb=VÞ] given in ref. 10. Considering the relationship between EBIC and bias, we have found that the conduction of the EBIC at the background can be fitted well as in TAT (0 to À1:2 V), TAT+DT (À1:2 to À1:5 V), and FN (more than À1:5 V).…”

Characterization of Interfaces between HfO2 Thin Film and Metal Electrode with Pre–Post Treatments

“…A thickness were deposited on SiO 2 / Si [20][21][22][23][24] at 630 C in a mixture of TiCl 4 , NH 3 , and N 2 gases at a stable chamber pressure of 20 mTorr by varying N 2 gas flow rate. We deposited the dielectric materials, i.e., HfO 2 films of 50…”