Trap filled limit of conducting organic materials

Jain, S.C.; Kapoor, A. K.; Geens, Wim; Poortmans, Jef; Mertens, R.; Willander, Magnus

doi:10.1063/1.1503863

Cited by 69 publications

(45 citation statements)

References 9 publications

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“…In intermediate bias region, the slope of J-V curves shows a greater largely increased. This behavior indicates that the current is bulk trapped corresponding to space charge limited current (SCLC) with an exponential distribution of traps [24,25]. There exists an exponential distribution of traps which reduces free-carriers in the transport states available to carry the current.…”

Section: Resultsmentioning

confidence: 99%

Improved Device Lifetime In Organic Light Emitting Devices By Using a Solution-Processed Mixing Single Layer Structure

Geng

Wang

Yang

et al. 2015

J. Photopol. Sci. Technol.

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Device stability in an organic light emitting devices (OLEDs) with a solution-processed mixing sing -NPD), host materials tris-(8-hydroxy-quinoline) aluminum (Alq 3 ), electron transport material 2,5---bipyridyl))-1,1-dimethyl-3,4-diphenylsilole (PyPySPyPy) and dope material 5,6,11,12-tetraphenylnaphthacene (rubrene) was investigated. Maximum power efficiency of 5.6 lm/W was obtained by optimizing the mixing ratio of -NPD: Alq 3 : rubrene:PyPySPyPy = 30:50:1:20. Luminance and power efficiency of mixed single layer device was largely improved compared to tri-layer heterojunction device. Lifetime testing demonstrated that the mixed single layer device exhibited longer operational lifetime of 340 hours, which was three times longer than the 105 hours for tri-layer device. Origin of improved device stability is analyzed by evaluating the current-voltage characteristics, dark sports growth and the polarized optical microscope images of mixed organic films.

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Section: Resultsmentioning

confidence: 99%

Improved Device Lifetime In Organic Light Emitting Devices By Using a Solution-Processed Mixing Single Layer Structure

Geng

Wang

Yang

et al. 2015

J. Photopol. Sci. Technol.

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“…Therefore the values of the parameters used by us are reasonable. Jain et al [11] studied the J -V characteristics of an ITO/MEH-OPV5/Al Schottky diode up to 10 V. The values of H b and p(0) in this sample are 6 × 10 16 and ∼10 18 cm −3 , respectively. According to our theory for this sample it is expected that first the current will follow the V 2 law for a considerable range of applied voltage and finally at very high voltages it will follow Ohm's law.…”

Section: Resultsmentioning

confidence: 99%

“…Note that equation (2) contains a definite integral, which is equivalent to using a boundary condition that at x = 0, the field is F (0) and p(0) is not infinity, as taken in the earlier paper [11]. F (0) can be obtained from the equation…”

Section: Maximum Value Of P Tmentioning

confidence: 99%

“…In modern technology these two approximations put severe restrictions on the usefulness of this equation. Jain et al [11] demonstrated that at very high voltages p(x) does not remain negligible compared with p t (x). In this case, an analytical solution cannot be obtained thus equation (1) does not remain valid and the continuity and Poisson's equations are solved numerically.…”

Section: Introductionmentioning

confidence: 99%

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Trap filled limit and high current–voltage characteristics of organic diodes with non-zero Schottky barrier

Kumar¹,

Jain²,

Kumar³

et al. 2008

J. Phys. D: Appl. Phys.

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The analytical expressions for trap filled limit voltage (V TFL ) and current-voltage characteristics for non-zero organic Schottky barrier are derived theoretically. The theoretical results are validated experimentally. In this case, the injected free charge carrier density at the contact is not infinitely large but a finite number p(0). For an exponential distribution of traps the maximum possible number of traps that can be filled in a sample is

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“…It is well know that SCLC governs the charge transport in various ways, i.e., the trap model (drift of charge carriers under the influence of traps, exponential distribution of traps in energy space) [13][14][15] and the temperature/field dependent mobility models. 16,17 For hole only devices, the J-V curves of PTB7, PCDTBT and PTB7:PCDTBT (0.7:0.3) blends (Figures 2(a), 2(b), 2(c)) follow the trap model with exponential distribution of traps in energy space as discussed below.…”

Section: à3mentioning

confidence: 99%

Improved hole mobility and suppressed trap density in polymer-polymer dual donor based highly efficient organic solar cells

Bharti

Sharma

Gupta

et al. 2016

Applied Physics Letters

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Here we report, the charge transport properties of polymer-polymer dual donor blended film, viz., polythieno[3,4-b]-thiophene-co-benzodithiophene (PTB7) and poly [N-9″-hepta-decanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′benzothiadiazole) (PCDTBT) in the optimized concentration. Trap density and hole mobility in polymer-polymer (PTB7-PCDTBT) dual donor system have been studied by means of current density–voltage (J-V) characteristics at various temperatures, i.e., 280 K–120 K in hole only device configuration, i.e., indium tin oxide/poly(3,4-ethylenedioxythiophene):poly(styrenesulphonate) (PEDOT:PSS)/Polymer film/gold (Au). The J-V curves exhibit the space charge limited conduction behavior. The corresponding hole mobility for PTB7 and PCDTBT are 3.9 × 10−4 cm2 V−1 s−1 and 2.1 × 10−4 cm2 V−1 s−1, respectively, whereas it is 9.1 × 10−4 cm2 V−1 s−1 in the polymer-polymer blend of PTB7:PCDTBT (0.7:0.3). This enhancement in mobility can be attributed to the suppressed trap density in PTB7:PCDTBT (0.7:0.3) of 7.4 × 1016 cm−3, as compared to the trap density of 1.1 × 1017 cm−3 for PTB7 and 1.6 × 1017 cm−3 for PCDTBT. Atomic force microscopy shows an improvement in the morphology of the blend. The J–V characteristic at various light intensities in the bulk heterojunction (BHJ) solar cell reveals that the blending of PCDTBT in PTB7 suppressed the trap-assisted recombination. The corresponding power conversion efficiencies for PTB7:PC71BM, PCDTBT:PC71BM and PTB7:PCDTBT:PC71BM BHJ solar cells are 6.9%, 6.1% and 9.0%, respectively. This work unravels that the enhanced mobility and suppressed trap density play a significant role in the improvement of efficiency in dual donor based organic solar cells.

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Trap filled limit of conducting organic materials

Cited by 69 publications

References 9 publications

Improved Device Lifetime In Organic Light Emitting Devices By Using a Solution-Processed Mixing Single Layer Structure

Improved Device Lifetime In Organic Light Emitting Devices By Using a Solution-Processed Mixing Single Layer Structure

Trap filled limit and high current–voltage characteristics of organic diodes with non-zero Schottky barrier

Improved hole mobility and suppressed trap density in polymer-polymer dual donor based highly efficient organic solar cells

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