Transport coefficients and cross sections for electrons in N2O and N2O/N2mixtures

Dupljanin, Snježana; Urquijo, J. de; Šašić, Olivera; Basurto, Eduardo; Juarez, Alfredo; Hernández-Ávila, J L; Dujko, Sasa; Petrović, Zoran Lj.

doi:10.1088/0963-0252/19/2/025005

Cited by 25 publications

(53 citation statements)

References 48 publications

(92 reference statements)

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“…Ionization rate coefficient. References are taken from[25,35,48,49,55,56].to agree well, and spread less than ours.6.1. Electron system 6.1.1.…”

supporting

confidence: 49%

“…In contrast to this, there is strong disagreement of almost two orders of magnitude between various sources on the dissociative attachment of N 2 O, shown in figure 5. While most older references agree on values below 1 • 10 −17 m 3 s −1 , the more recent measurements of Yoshida et al [47], Dupljanin [48] and Teich [56] 10 −17 We find that, at sufficiently high E/N , a very substantial fraction of all O − exhibits detachment (from 5 to 30%, depending on the pressure and on the electric field) instead of converting to N 2 O 2 − or NO − . Similar findings have, to our knowledge, never been published (except for a careful suggestion of Chaney and Christopherou [21]) and it seemed at first highly unlikely that such an efficient process should have been missed in various studies.…”

Section: Dissociative Electron Attachment To O −mentioning

confidence: 46%

“…Also, mean energies of O − and NO − are estimated, which we use to convert units of several sources. Dupljanin et al [48] compiled a cross section set for N 2 O, based on Pulsed Townsend measurements.…”

Section: Later Workmentioning

confidence: 99%

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Measurement and modeling of electron and anion kinetics in N₂O discharges

Hösl

Pachin

Egüz

et al. 2020

J. Phys. D: Appl. Phys.

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From Pulsed Townsend measurements in nitrous oxide (N2O) we obtain swarm parameters for various electron and in particular anion processes. We discuss various assumptions on the discharge model in literature, and motivate a suitable model. Our findings agree with modern sources on the electron swarm parameters. Contrary to many sources however we find evidence for electron detachment from O-with a coefficient of ≈ 3.2 • 10 −20 m 2 , and we suggest further changes to the commonly accepted discharge model. Based on the obtained swarm parameters, an electric strength dependent on pressure is estimated and compared to breakdown measurements.

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“…Ionization rate coefficient. References are taken from[25,35,48,49,55,56].to agree well, and spread less than ours.6.1. Electron system 6.1.1.…”

supporting

confidence: 49%

Section: Dissociative Electron Attachment To O −mentioning

confidence: 46%

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Measurement and modeling of electron and anion kinetics in N₂O discharges

Hösl

Pachin

Egüz

et al. 2020

J. Phys. D: Appl. Phys.

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“…Several attempts were made to measure electron swarm coefficients (electron drift velocity, longitudinal diffusion coefficient and effective ionization coefficient) in THF using the pulsed Townsend technique [49,50]. Unfortunately, all of the attempts to measure electron avalanches in pure THF were unsuccessful because of a hitherto unobserved phenomenon.…”

Section: Swarm Experiments Considerations In Thf Using the Pulsed-tmentioning

confidence: 99%

Transport properties of electron swarms in tetrahydrofuran under the influence of an applied electric field

et al. 2013

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Using an almost complete set of electron impact cross sections for scattering from the important biomolecule tetrahydrofuran (THF), compiled as a part of this study, swarm transport coefficients are determined by solving the Boltzmann's equation over the range of applied reduced fields from 0.01 to 10 000 Td. The present investigation highlights the experimental issues associated with, and the real need for, measurements of the corresponding THF transport coefficients, so that the self-consistency of our proposed cross section set might be evaluated.

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“…[130] The energy loss is due to excitation of the N 2 O molecules, owing to dissociation and excitation of the vibrational and rotational states of the molecule. [117,118,130,131] Initially, the peak target current decreases as more nitrous oxide is introduced. This can be attributed to the decreasing plasma density in front of the target and thus decreasing plasma conductivity [132][133][134], and to reduced secondary electron emission from silicon suboxides [98], limiting the current that can be drawn to the cathode.…”

mentioning

confidence: 99%

Silicon Nitride Based Coatings Grown by Reactive Magnetron Sputtering

Hänninen¹

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Silicon nitride and silicon nitride-based ceramics have several favorable material properties, such as high hardness and good wear resistance, which makes them important materials for the coating industry. This thesis focuses the synthesis of silicon nitride, silicon oxynitride, and silicon carbonitride thin films by reactive magnetron sputtering. The films were characterized based on their chemical composition, chemical bonding structure, and mechanical properties to link the growth conditions to the film properties. Silicon nitride films were synthesized by reactive high power impulse magnetron sputtering (HiPIMS) from a Si target in Ar/N 2 atmospheres, whereas silicon oxynitride films were grown by using nitrous oxide as the reactive gas. Silicon carbonitride was synthesized by two different methods. The first method was using acetylene (C 2 H 2 ) in addition to N 2 in a Si HiPIMS process and the other was co-sputtering of Si and C, using HiPIMS for Si and direct current magnetron sputtering (DCMS) for graphite targets in an Ar/N 2 atmosphere. Langmuir probe measurements were carried out for the silicon nitride and silicon oxynitride processes and positive ion mass spectrometry for the silicon nitride processes to gain further understanding on the plasma conditions during film growth. The target current and voltage waveforms of the reactive HiPIMS processes were evaluated.The main deposition parameter affecting the nitrogen concentration of silicon nitride films was found to be the nitrogen content in the plasma. Films with nitrogen contents of 50 at.% were deposited at N 2 /Ar flow ratios of 0.3 and above. These films showed Si−N as the dominating component in Si 2p X-ray photoelectron spectroscopy (XPS) core level spectra and Si−Si bonds were absent. The substrate temperature and target power were found to affect the nitrogen content to a lower extent. The residual stress and hardness of the films were found to increase with the film nitrogen content. Another factors influencing the coating stress were the process pressure, negative substrate bias, substrate temperature, and HiPIMS pulse energy. Silicon nitride coatings with good adhesion and low levels of compressive residual stress were grown by using a pressure of 600 mPa, a substrate temperature iii iv below 200 ℃, pulse energies below 2.5 Ws, and negative bias voltages up to 100 V.The elemental composition of silicon oxynitride films was shown to depend on the target power settings as well as on the nitrous oxide flow rate. Silicon oxide-like films were synthesized under poisoned target surface conditions, whereas films deposited in the transition regime between poisoned and metallic conditions showed higher nitrogen concentrations. The nitrogen content of the films deposited in the transition region was controlled by the applied gas flow rate. The applied target power did not affect the nitrogen concentration in the transition regime, while the oxygen content increased at decreasing target powers. The chemical composition of the films was show...

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Transport coefficients and cross sections for electrons in N₂O and N₂O/N₂mixtures

Cited by 25 publications

References 48 publications

Measurement and modeling of electron and anion kinetics in N₂O discharges

Measurement and modeling of electron and anion kinetics in N₂O discharges

Transport properties of electron swarms in tetrahydrofuran under the influence of an applied electric field

Silicon Nitride Based Coatings Grown by Reactive Magnetron Sputtering

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Transport coefficients and cross sections for electrons in N2O and N2O/N2mixtures

Cited by 25 publications

References 48 publications

Measurement and modeling of electron and anion kinetics in N2O discharges

Measurement and modeling of electron and anion kinetics in N2O discharges

Transport properties of electron swarms in tetrahydrofuran under the influence of an applied electric field

Silicon Nitride Based Coatings Grown by Reactive Magnetron Sputtering

Contact Info

Product

Resources

About

Transport coefficients and cross sections for electrons in N₂O and N₂O/N₂mixtures

Measurement and modeling of electron and anion kinetics in N₂O discharges

Measurement and modeling of electron and anion kinetics in N₂O discharges