Transport and optical properties of single- and bilayer black phosphorus with defects

Abstract

We study the electronic and optical properties of single-and bilayer black phosphorus with short-and long-range defects by using the tight-binding propagation method. Both types of defect states are localized and induce a strong scattering of conduction states, reducing significantly the charge carrier mobility. In contrast to properties of pristine samples, the anisotropy of defect-induced optical excitations is suppressed due to the isotropic nature of the defects. We also investigate the Landau level spectrum and magneto-optical conductivity and find that the discrete Landau levels are sublinearly dependent on the magnetic field and energy level index, even at low defect concentrations.

Strong Modulation of Optical Properties in Black Phosphorus through Strain-Engineered Rippling

“…41 To connect the spectral properties to the optical This is the post-peer reviewed version of the following article: J. Quereda et al "Strong modulation of optical properties in black phosphorus through strain-engineered rippling" Nano Letters (2016) DOI:10.1021/acs.nanolett.5b04670 Which has been published in final form at: http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.5b04670 9 properties of strained black phosphorus, we have used the Kubo formula to compute the optical conductivity of both undoped single layer and bulk black phosphorus for different values and directions of uniaxial strain. In agreement with previous results for unstrained black phosphorus, 42,43 the material exhibits a strong linear dichroism, i.e. a strong difference in optical conductivity for incident light polarized along zigzag ( ) and armchair ( ) directions, normalized to σ0 = 2e 2 /h (see Fig.…”

Screening and plasmons in pure and disordered single- and bilayer black phosphorus

“…The origin of LRDP could be screened charged impurities on the substrate [44][45][46][47] or surface corrugations such as ripples and wrinkles [48,49]. Although LRDP does not introduce resonances in the spectrum, they lead to a uniform increase of states in the gap [18]. The amount of resonant scatterers and Gaussian centers are quantified by n x and n c , respectively, which are the probability for a scatterer or Gaussian center to exist.…”

“…Point defects are modeled by elimination of atoms randomly over the whole sample, which can be viewed as vacancies, chemical adsorbates or substitution of other types of atoms which prevent the hopping of electrons to their neighbor sites [18,28,[31][32][33][34][35][36]. These types of point defects are the so-called resonant scatterers (RS) which provide resonances within the band gap [18,35,36], as confirmed by first-principles calculations which include single vacancies [37,38], adatoms (Si, Ge, Au, Ti, V) [39], absorption of organic molecules [40], substitutional p-dopants (Te, C) [37] or oxygen bridge-type defects [41].…”

“…It is a semiconductor with direct band gap and highly anisotropic electronic and optical properties [3,[7][8][9][10][11][12][13][14][15][16][17][18]. The band gap of thin BP films varies, depending on the thickness, from 0.3 eV to around 2 eV.…”

Aspects of anisotropic fractional quantum Hall effect in phosphorene

“…The mobilities of the few-layer BP obtained so far lie in the range of 1000 -5000 cm 2 V −1 s −1 [6,11,12]. Considerable progress has been made in the study of the electronic and optical properties of this material both experimentally [6][7][8][11][12][13] and theoretically [14][15][16][17][18][19][20][21][22][23][24]. Higher mobilities were achieved by sandwiching the BP in hexagonal boron nitride flakes and placing on top of the graphite back gate that has enabled observation of the integer quantum Hall effect [12].…”